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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
PF08109B
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-821C (Z) Rev.3 Feb. 2001 Application
* Dual band Amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz) * For 3.5 V nominal battery use
Features
* 2 in / 2 out dual band amplifire * Simple external circuit including output matching circuit * High gain 3stage amplifier : 0 dBm input Typ * Lead less thin & Small package : 11 x 13.75 x 1.8 mm Typ * High efficiency : 50% Typ at nominal output power for E-GSM 43% Typ at 32.7 dBm for DCS1800
Pin Arrangement
* RF-O-12
7 8G 9 10 G 11 12 6 5
G
4
3
1G
2
1: N/C 2: N/C 3: Pout DCS 4: Vdd DCS 5: Vdd GSM 6: Pout GSM 7: N/C 8: Vtxlo 9: Pin GSM 10: Vapc GSM 11: Vapc DCS 12: Pin DCS G: GND
PF08109B
Absolute Maximum Ratings
(Tc = 25C)
Item Supply voltage Supply current Symbol Vdd Idd GSM Idd DCS Vtxlo voltage Vapc voltage Input power Operating case temperature Storage temperature Output power Vtxlo Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8 3 2 4 4 10 -30 to +100 -30 to +100 5 3 Unit V A A V V dBm C C W W
Note: The maximum ratings shall be valid over both the E-GSM-band (880 MHz to 915 MHz), and the DCS1800-band (1710 MHz to 1785 MHz).
Electrical Characteristics for DC
(Tc = 25C)
Item Drain cutoff current Vapc control current Vtxlo control current Symbol Ids Iapc Itxlo Min Typ Max 100 3 100 Unit A mA A Test Condition Vdd = 8 V, Vapc = 0 V Vapc =2.2 V Vtxlo = 2.4 V
Rev.3, Feb. 2001, page 2 of 23
PF08109B
Electrical Characteristics for E-GSM mode
(Tc = 25C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd GSM = 3.5 V, Pin GSM = 0 dBm, Rg = Rl = 50 , Tc = 25C, Vapc DCS = 0.1 V Pulse operation with pulse width 577 s and duty cycle 1:8 shall be used.
Item Frequency range Total efficiency (Hi) 2nd harmonic distortion 3rd harmonic distortion Input VSWR Total efficiency (Lo) Output power (1)(Hi) Output power (1)(Lo) Output power (2)(Hi) Output power (2)(Lo) Isolation Isolation at DCS RF-output when GSM is active Switching time Stability Symbol f T(Hi) 2nd H.D. 3rd H.D. VSWR (in) T(Lo) Pout (1)(Hi) Pout (1)(Lo) Pout (2)(Hi) Pout (2)(Lo) t r, t f Min 880 41 27 35.5 30.8 33.5 28.8 Typ 50 -45 -45 1.5 35 36.0 31.3 34.0 29.3 -42 -23 1 Max 915 -38 -40 3 -36 -17 2 Unit MHz % dBc dBc % dBm dBm dBm dBm dBm dBm s Pout GSM = 30.8dBm, Vtxlo = 2.4V, Vapc GSM = controlled Vapc GSM = 2.2V, Vtxlo = 0.1V Vapc GSM = 2.2V, Vtxlo = 2.4V Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85C, Vtxlo = 0.1V Vdd GSM = 3.0V, Vapc GSM = 2.2V, Tc = +85C, Vtxlo = 2.4V Vapc GSM = 0.2V, Vtxlo = 0.1V Pout GSM = 35.5dBm, Vtxlo = 0.1V Measured at f = 1760 to 1830MHz Pout GSM = 0 to 35.5dBm, Vtxlo = 0.1V Vdd GSM = 3.0 to 5.1V, Pout GSM 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM 2.2V, GSMpulse. Rg = 50, Output VSWR = 6 : 1 All phases Vdd GSM = 3.0 to 5.1V, t = 20sec., Pout GSM 35.5dBm, Vtxlo = 0.1, 2.4V, Vapc GSM 2.2V, GSM pulse. Rg = 50, Output VSWR = 10 : 1 All phases Pout GSM = 35.5dBm, Vtxlo = 0.1V, Vapc GSM = controlled Test Condition
No parasitic oscillation
Load VSWR tolerance
No degradation
Rev.3, Feb. 2001, page 3 of 23
PF08109B
Electrical Characteristics for DCS1800 mode
(Tc = 25C) Test conditions unless otherwise noted: f = 1710 to 1785 MHz, Vdd DCS = 3.5 V, Pin DCS = 0 dBm, Rg = Rl = 50 , Tc = 25C, Vapc GSM =0.1 V Pulse operation with pulse width 577 s and duty cycle 1:8 shall be used.
Item Frequency range Total efficiency (Hi) 2nd harmonic distortion 3rd harmonic distortion Input VSWR Total efficiency (Lo) Output power (1) Output power (2) Isolation Isolation at GSM RF-output when DCS is active Switching time Stability Symbol f T(Hi) 2nd H.D. 3rd H.D. VSWR (in) T(Lo) Pout (1) Pout (2) t r, t f Min 1710 36 17 32.7 30.7 Typ 43 -45 -45 1.5 25 33.2 31.2 -42 -10 1 Max 1785 -38 -40 3 -36 0 2 Unit MHz % dBc dBc % dBm dBm dBm dBm s Pout DCS = 26.7dBm, Vapc DCS = controlled Vapc DCS = 2.2V, Vdd DCS = 3.0V, Vapc DCS = 2.2V, Tc = +85C Vapc DCS = 0.2V Pout DCS = 32.7dBm, Measured at f = 1710 to 1785MHz Pout DCS = 0 to 32.7dBm Vdd DCS = 3.0 to 5.1V, Pout DCS 32.7dBm, Vapc DCS 2.2V, DCS pulse. Rg = 50, Output VSWR = 6 : 1 All phases Vdd DCS = 3.0 to 5.1V, Pout DCS 32.7dBm, t = 20sec., Vapc DCS 2.2V, DCS pulse. Rg = 50, Output VSWR = 10 : 1 All phases Pout DCS = 32.7dBm, Vapc DCS = controlled Test Condition
No parasitic oscillation
Load VSWR tolerance
No degradation
Rev.3, Feb. 2001, page 4 of 23
PF08109B
Characteristic Curves
High mode, f = 880 MHz 40 30 20 10
Pout (dBm)
f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
55 Pout 50 45 40 Eff
Eff (%) Eff (%)
0 -10 -20 -30 -40 -50
35 30 25 20 15 10
5 -60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V)
Low mode, f = 880 MHz 40 30 20 10
Pout (dBm)
f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
55 50 Pout 45 40 35 Eff 30 25 20 15 10
0 -10 -20 -30 -40 -50
5 -60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V)
Rev.3, Feb. 2001, page 5 of 23
PF08109B
High mode, f = 915 MHz 40 30 20 10
Pout (dBm)
f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
55 Pout 50 45 40 Eff
Eff (%) Eff (%)
0 -10 -20 -30 -40 -50
35 30 25 20 15 10
5 -60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V)
Low mode, f = 915 MHz 40 30 20 10
Pout (dBm)
f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
55 50 Pout 45 40 35 Eff 30 25 20 15 10
0 -10 -20 -30 -40 -50
5 -60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V)
Rev.3, Feb. 2001, page 6 of 23
PF08109B
38 High mode 37
Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V
Pout (dBm)
36 Low mode 35
34
33 800
840
880 920 f (MHz)
960
1000
50 High mode 45 40
Eff (%)
35 30 25 20 15 800 Low mode
Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50 High mode: Pout = 35.5 dBm Vtxlo = 0.1 V Low mode: Pout = 30.8 dBm Vtxlo = 2.4 V
840
880 920 f (MHz)
960
1000
Rev.3, Feb. 2001, page 7 of 23
PF08109B
High mode 38
Vdd = 3.5 V, Vapc = 2.2 V, Vtxlo = 0.1 V, Tc = 25C, Rg = Rl = 50
37
f = 880 MHz
Pout (dBm)
36
f = 915 MHz
35
34
33 -6
-4
-2
0 Pin (dBm)
2
4
6
Low mode 38
Vdd = 3.5 V, Vapc = 2.2 V, Vtxlo = 2.4 V, Tc = 25C, Rg = Rl = 50
37
Pout (dBm)
36
f = 880 MHz
35 f = 915 MHz 34
33 -6
-4
-2
0 Pin (dBm)
2
4
6
Rev.3, Feb. 2001, page 8 of 23
PF08109B
High mode 60 55 f = 915 MHz 50 45
Eff (%)
f = 880 MHz
40 35 30 25 20 -6 -4 -2 0 Pin (dBm) 2
Pout = 35.5 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Tc = 25C, Rg = Rl = 50
4
6
High mode 60 55 f = 915 MHz 50 45
Eff (%)
40 35 30 25 20 -6 -4 -2
f = 880 MHz
Pout = 34.8 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Tc = 25C, Rg = Rl = 50
0 Pin (dBm)
2
4
6
Rev.3, Feb. 2001, page 9 of 23
PF08109B
Low mode 60 55 50 45
Pout = 30.8 dBm, Vdd = 3.5 V, Vapc = control, Vtxlo = 2.4 V, Tc = 25C, Rg = Rl = 50
Eff (%)
40 35 30 25 20 -6 -4 -2
f = 915 MHz
f = 880 MHz
0 Pin (dBm)
2
4
6
Rev.3, Feb. 2001, page 10 of 23
PF08109B
60
f = 880 MHz, Vdd = 3.5 V, Vapc = control, 50 Pin = 0 dBm, Tc = 25C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V 40 Low mode: Vtxlo = 2.4 V
Eff (%)
30 Low mode 20 High mode 10 26
28
30
32 34 Pout (dBm)
36
38
4
f = 880 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, 3 Tc = 25C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V
Id (A)
2
1 High mode Low mode 0 -20 -10 0 10 20 Pout (dBm) 30 40
Rev.3, Feb. 2001, page 11 of 23
PF08109B
60
50
Eff (%)
40 Low mode 30 High mode 20
10 26
f = 915 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V
28
30
32 34 Pout (dBm)
36
38
4
f = 915 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, 3 Tc = 25C, Rg = Rl = 50 High mode: Vtxlo = 0.1 V Low mode: Vtxlo = 2.4 V
Id (A)
2
High mode 1 Low mode 0 -20 -10 0 10 20 Pout (dBm) 30 40
Rev.3, Feb. 2001, page 12 of 23
PF08109B
f = 1710 MHz 40 30 20 10
Pout (dBm)
f = 1710 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
50 45 40 35 30 Pout 25 Eff 20 15 10
Eff (%) Eff (%)
0 -10 -20 -30 -40
-50 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V)
f = 1785 MHz 40 30 20 10
Pout (dBm)
f = 1785 MHz, Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
50 45 40 35 30 Pout Eff 25 20 15 10
0 -10 -20 -30 -40
-50 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Vapc (V)
Rev.3, Feb. 2001, page 13 of 23
PF08109B
50 45 40 35
Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
Eff (%)
30 25
f = 1785 MHz
f = 1710 MHz 20 15 10 22 24 26 28 30 Pout (dBm) 32 34
Rev.3, Feb. 2001, page 14 of 23
PF08109B
35
34
Pout (dBm)
33
32
Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
31
30 1600
1650
1700
1750 f (MHz)
1800
1850
1900
50 45 40 35
Eff (%)
Pout = 32.7 dBm
30 25 Pout = 26.7 dBm 20 15 10 1600 1650 1700 1750 f (MHz)
Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
1800
1850
1900
Rev.3, Feb. 2001, page 15 of 23
PF08109B
35
Vdd = 3.5 V, Vapc = 2.2 V, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
34
f = 1710 MHz
Pout (dBm)
33
f = 1785 MHz
32
31
30 -6
-4
-2
0 Pin (dBm)
2
4
6
50
Vdd = 3.5 V, Vapc = control, Pout = 32.7 dBm, Tc = 25C, Rg = Rl = 50
f = 1785 MHz
45
Eff (%)
40
f = 1710 MHz
35
30
25 -6
-4
-2
0 Pin (dBm)
2
4
6
Rev.3, Feb. 2001, page 16 of 23
PF08109B
35
Vdd = 3.5 V, Vapc = control, Pout = 26.7 dBm, Tc = 25C, Rg = Rl = 50
30
f = 1785 MHz
Eff (%)
25 f = 1710 MHz 20
15
10 -6
-4
-2
0 Pin (dBm)
2
4
6
0 -5
Cross band Isolation at GSM RF-output when DCS is active (dBm)
Vdd = 3.5 V, Vapc = control, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50
-10 -15 -20
f = 1785 MHz
f = 1710 MHz -25 -30 -35 15
20
25 Pout (dBm)
30
35
Rev.3, Feb. 2001, page 17 of 23
PF08109B
40 39 38
GSM Hi mode Pin = 0 dBm, Vapc = 2.2 V, Tc = 25C, Vtxlo = 0.1 V
Pout (dBm)
37 36 35 34 33
f = 880 MHz f = 915 MHz
32 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V)
38 37 36
GSM Lo mode Pin = 0 dBm, Vapc = 2.2 V, Tc = 25C, Vtxlo = 2.4 V
Pout (dBm)
35 34 33 32 31
f = 880 MHz f = 915 MHz
30 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V)
Rev.3, Feb. 2001, page 18 of 23
PF08109B
50 45 40
Eff (%)
35 30 25
GSM Hi mode Pin = 0 dBm, Po = 35.5 dBm, Tc = 25C, Vtxlo = 0.1 V f = 880 MHz f = 915 MHz
20 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V)
40 35 30
Eff (%)
25 20 15
GSM Lo mode Pin = 0 dBm, Po = 30.8 dBm, Tc = 25C, Vtxlo = 2.4 V f = 880 MHz f = 915 MHz
10 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V)
Rev.3, Feb. 2001, page 19 of 23
PF08109B
38 37 36
DCS Pin = 0 dBm, Vapc = 2.2 V, Tc = 25C f = 1710 MHz f = 1785 MHz
Pout (dBm) Eff (%)
35 34 33 32 31
30 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V)
45
40
35
30
DCS Pin = 0 dBm, Po = 32.7 dBm, Tc = 25C f = 1710 MHz f = 1785 MHz
25
20 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 Vdd (V)
Rev.3, Feb. 2001, page 20 of 23
PF08109B
0 -10 -20
f = 880 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50 f = 1760 MHz
Isolation at DCS RF-output when GSM is active (dBm)
-30 measured at -40 -50 -60 10
15
20
25 30 Pout (dBm)
35
40
0 -10 -20
f = 915 MHz, Vdd = 3.5 V, Vapc = control, Vtxlo = 0.1 V, Pin = 0 dBm, Tc = 25C, Rg = Rl = 50 f = 1830 MHz
Isolation at DCS RF-output when GSM is active (dBm)
-30 measured at -40 -50 -60 10
15
20
25 30 Pout (dBm)
35
40
Rev.3, Feb. 2001, page 21 of 23
PF08109B
Package Dimensions
Unit: mm
1.8 0.2 8 9 G 7 6
11.0 0.3
G 11 12 1 G 2 (Upper side)
G 4 3
11.0 0.3
10
5
(10.8)
7 8G 9 10 G 11 12
6
5
G
4
3
1G
2
13.75 0.3 13.75 0.3
(3.3) (1.4) (1.0) (3.3) (1.0) (1.4) (3.4)
(1.2) (0.8) (1.4) (1.0) (1.4) (1.4) (0.8) (0.8) (1.45)
(1.0) (1.0) (2.8) (1.0) (1.0)
1: N/C 2: N/C 3: Pout DCS 4: Vdd DCS 5: Vdd GSM 6: Pout GSM 7: N/C 8: Vtxlo 9: Pin GSM 10: Vapc GSM 11: Vapc DCS 12: Pin DCS G: GND Remark: Coplanarity of bottom side of terminals are less than 0 0.1mm.
Hitachi Code JEDEC JEITA Mass (reference value) RF-O-12
(1.4)
11.0 0.3
(2.6) (2.6)
(2.4) (2.4)
(1.1) (3.7)
(3.7)
(1.2)
(2.5) (2.5)
(Bottom side)
Rev.3, Feb. 2001, page 22 of 23
(4.6)
(4.6)
PF08109B
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
http://www.renesas.com
Copyright (c) 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.3, Feb. 2001, page 23 of 23

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