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| Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Durchlastrom Grenzeffektivwert pro Chip RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Stostrom Grenzwert surge forward current Grenzlastintegral I t - value 2 Tvj =25C TC =80C TC =80C tP = 10 ms, T vj = tP = 10 ms, T vj = 25C 25C VRRM IFRMSM IRMSmax IFSM It 2 800 V 23 36 197 158 194 125 A A A A As As 2 2 tP = 10 ms, T vj = 150C tP = 10 ms, T vj = 150C Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - value tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125C IF IFRM 2 It Tvj =25C TC =80C TC = 25 C tP = 1 ms, TC = 25C T C =80C VCES IC,nom. IC ICRM Ptot VGES 600 10 15 20 55 +/- 20V V A A A W V 10 20 12 A A A2s Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Thomas Passe approved by: Ingo Graf tP = 1 ms IF IFRM 10 20 A A Tvj =25C TC =80 C TC = 25 C tP = 1 ms, T c=80C TC = 25C VCES IC,nom. IC ICRM Ptot VGES 600 10 15 20 55 +/- 20V V A A A W V date of publication: 2002-02-13 revision: 6 1(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Tvj = 150C, Tvj = 150C Tvj = 150C Tvj = 150C, TC = 25C V R = 800 V I F = 10 A VF V(TO) rT IR RAA'+CC' min. - typ. 0,9 0,67 21 5 max. V V mW mA - 11 - mW Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data VCE = VGE, Tvj = 25C, min. IC = IC = IC = 10 A 10 A 0,35mA VGE(TO) Cies ICES IGES 300 V 82 Ohm 82 Ohm 300 V 82 Ohm 82 Ohm 300 V 82 Ohm 82 Ohm 300 V 82 Ohm 82 Ohm 300 V 82 Ohm 80 nH 300 V 82 Ohm 80 nH 82 Ohm 360 V 400 A/s ISC Eoff Eon tf td,off tr td,on VCE sat 4,5 - typ. 1,95 2,2 5,5 0,8 5,0 - max. 2,55 6,5 400 V V V nF mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj =125C, V CE = 600V VCE = 0V, VGE =20V, Tvj =25C IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = LS = IC = INenn, V CC = LS = tP 10s, VGE 15V, Tvj125C, RG = VCC = dI/dt = VGE = 15V, Tvj = 125C, R G = VGE = 15V, Tvj = 125C, R G = 32 30 26 28 234 230 10 30 0,36 - ns ns ns ns ns ns ns ns mWs 0,44 - mWs 40 - A 2(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy TC = 25C LsCE RCC'+EE' - typ. 14 max. 40 nH mW min. VGE = 0V, Tvj = 25C, VGE = 0V, Tvj = 125C, IF=INenn, IF = IF = 10 A 10 A 600 A/us 300 V 300 V 600 A/us 300 V 300 V 600 A/us 300 V 300 V Erec Qr IRM VF - typ. 1,85 1,9 11 12 0,35 0,71 0,05 0,12 max. 2,25 V V A A As As mWs mWs - diF/dt = VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current VCE = VGE, Tvj = 25C, min. IC = IC = IC = 10,0 A 10,0 A 0,35mA VGE(TO) Cies VCE sat 4,5 IGES - typ. 1,95 2,2 5,5 0,8 5,0 - max. 2,55 6,5 400 V V V nF mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 125C, V CE = 600V VCE = 0V, VGE = 20V, Tvj = 25C Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, min. IF = IF = 10,0 A 10,0 A VF - typ. 1,85 1,9 max. 2,25 V V NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value min. TC = 25C TC = 100C, R 100 = 493 W TC = 25C R2 = R1 exp [B(1/T2 - 1/T1)] R25 DR/R P25 B25/50 -5 typ. 5 max. 5 20 kW % mW K 3375 3(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to heatsink Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Innerer Warmewiderstand thermal resistance, junction to case Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Ubergangs-Warmewiderstand thermal resistance, case to heatsink Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Tvj Top Tstg lPaste=1W/m*K lgrease=1W/m*K RthCH RthJC lPaste=1W/m*K lgrease=1W/m*K RthJH -40 -40 typ. 2,6 2,8 4,3 2,8 4,3 0,4 0,8 1,5 0,8 1,5 - max. 2,4 2,2 3,1 2,2 3,1 150 125 125 K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W C C C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anprekraft f. mech. Befestigung pro Feder mounting force per clamp Gewicht weight Kontakt - Kuhlkorper terminal to heatsink Kriechstrecke creeping distance Luftstrecke clearance Terminal - Terminal terminal to terminal Kriechstrecke creeping distance Luftstrecke clearance Al2O3 225 F 40...80 N G 36 13,5 12 7,5 7,5 g mm mm mm mm 4(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 20 18 16 14 12 Tj = 25C Tj = 125C IC [A] 10 8 6 4 2 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 20 18 16 14 12 VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V IC = f (VCE) Tvj = 125C IC [A] 10 8 6 4 2 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] 5(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary IC = f (VGE) VCE = 20 V Ubertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) 20 18 16 14 12 Tj = 25C Tj = 125C IC [A] 10 8 6 4 2 0 5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) 20 18 16 14 12 Tj = 25C Tj = 125C IF = f (VF) IF [A] 10 8 6 4 2 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 VF [V] 6(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary E = f (IC), Eoff = f (IC), Erec = f (IC) on Tj = 125C, V GE = 15 V, VCC = 300 V 82 Ohm Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 1,6 Eon 1,4 1,2 Eoff Erec RGon = RGoff = E [mWs] 1 0,8 0,6 0,4 0,2 0 0 2 4 6 8 10 12 14 16 18 20 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 1,6 1,4 1,2 1 Eon Eoff Erec E = f (RG), Eoff = f (RG), Erec = f (RG) on Tj = 125C, V GE = +-15 V , I c = Inenn , VCC = 300 V E [mWs] 0,8 0,6 0,4 0,2 0 80 100 120 140 160 180 200 RG [W] 7(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary ZthJH = f (t) Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter 10,000 Zth-IGBT Zth-FWD ZthJH [K/W] 1,000 i 1 IGBT: ri [K/W]: 185e-3 2 922,6e-3 79,9e-3 1,41 78,7e-3 3 722,7e-3 10,3e-3 1,1 10,16e-3 1 4 969,7e-3 226,8e-3 1,51 225,6e-3 10 ti [s]: 3e-6 FWD: r i [K/W]: 280,9e-3 ti [s]: 0,100 0,001 0,01 3e-6 0,1 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) 25 IC = f (VCE) 82 Ohm Reverse bias save operating area Inverter (RBSOA)Tvj = 125C, VGE = 15V, RG = 20 IC,Modul IC,Chip 15 IC [A] 10 5 0 0 100 200 300 400 500 600 700 VCE [V] 8(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) 20 18 16 14 12 Tj = 25C Tj = 125C IC [A] 10 8 6 4 2 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 20 18 16 14 12 Tj = 25C Tj = 125C IF [A] 10 8 6 4 2 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 VF [V] 9(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary IF = f (VF) Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) 20 18 16 14 12 Tj = 25C Tj = 150C IF [A] 10 8 6 4 2 0 0,00 0,20 0,40 0,60 0,80 1,00 1,20 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp 10000 R[W] 1000 100 0 20 40 60 80 100 120 140 TC [C] 10(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Vorlaufig Preliminary Schaltplan/ Circuit diagram J Gehauseabmessungen/ Package outlines Bohrplan / drilling layout 11(12) Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R06KL4 Gehauseabmessungen Forts. / Package outlines contd. Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes 12(12) |
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