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Fast Recovery Epitaxial Diode (FRED)
DSEI 30
IFAVM = 37 A VRRM = 600 V trr = 35 ns
VRSM V 640
VRRM V 600
Type
A
C
TO-247 AD
C
DSEI 30-06A
A
C
A = Anode, C = Cathode
Symbol IFRMS IFAVM yyx IFRM IFSM
Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 70 37 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g
Features
q
q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q q
International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque
Applications
q
q q q
125 0.8...1.2 6
q
q q
Symbol
Test Conditions
Characteristic Values typ. max. 100 50 7 1.4 1.6 1.01 7.1 1 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A
q
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IR
TVJ = 25C TVJ = 25C TVJ = 125C IF = 37 A;
VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C
Advantages
q q
VF VT0 rT RthJC RthCK RthJA trr IRM
q q q
For power-loss calculations only TVJ = TVJM
High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25C VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms L 0.05 mH; TVJ = 100C
35 10
50 11
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-2
009
DSEI 30, 600 V
Fig. 1 Forward current versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus -diF/dt.
Fig. 4 Dynamic parameters versus junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus diF/dt.
Dimensions
Dim. A B C D E F G H J K L M N
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
Fig. 7 Transient thermal impedance junction to case.
(c) 2000 IXYS All rights reserved
2-2

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