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| Silicon Schottky Diode q q q q BAS 70W General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detection and mixing Type Ordering Code (tape and reel) Q62702-A1068 Q62702-A1069 Q62702-A1070 Pin Configuration 1 2 3 A1 A1 C1 C2 A2 C2 Marking Package1) BAS 70-04W BAS 70-05W BAS 70-06W C1/A2 74s C1/C2 75s A1/A2 76s SOT-323 Maximum Ratings Parameter Reverse voltage Forward current Surge forward current, t 10 ms Total power dissipation TS 91 C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 70 70 100 250 - 55 ... + 150 - 55 ... + 150 Unit V mA mA mW C C VR IF IFSM Ptot Top Tstg Rth JA Rth JS 455 235 K/W K/W 1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 10.94 BAS 70W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage I(BR) = 10 A Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 50 V VR = 70 V Diode capacitance Value typ. max. Unit V(BR) 70 - 375 705 880 - - 1.5 - 34 2 - V mV 300 600 750 410 750 1000 A - - 0.1 10 pF - 2 ps - 100 - - - nH - VF IR CT VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kHz Series inductance rf LS Semiconductor Group 2 BAS 70W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) Differential forward resistance RF = f (IF) Semiconductor Group 3 BAS 70W Permissible Pulse load IF = f (TA; TS*) * Package mounted on epoxy Permissible load RthJS = f (tp) Permissible Pulse load IFmax / IFDC = f (tp) Semiconductor Group 4 |
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