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2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3472 Switching Regulator Applications Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Tc = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 1 2 20 122 1 2 150 -55 to150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) JEDEC JEITA TOSHIBA SC-64 2-7B1B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 203 mH, RG = 25 , IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-03-04 2SK3472 Electrical Characteristics (Tc = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 360 V, VGS = 10 V, ID = 1 A - Duty < 1%, tw = 10 s = VDD 200 V - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 10 ID = 0.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min 30 450 2.0 0.3 Typ. 4.0 0.8 180 2 20 7 15 30 70 5 3 2 Max 10 100 4.0 4.6 ns nC pF Unit A V A V V S RL = 400 Source-Drain Ratings and Characteristics (Tc = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 350 1.3 Max 1 2 -1.7 Unit A A V s C Marking Lot Number Type K3472 Month (starting from alphabet A) Year (last number of the christian era) 2 2002-03-04 2SK3472 ID - VDS 1.0 Common source 10 Tc = 25C pulse test 8.0 0.6 2.0 5.75 6.0 5.5 1.6 10 8.0 ID - VDS 6.25 6.0 Common source Tc = 25C pulse test 0.8 (A) ID ID (A) 5.25 1.2 5.75 Drain current Drain current 0.4 5.0 4.75 0.8 5.5 5.25 0.2 VGS = 4.5 V 0.4 5.0 VGS = 4.5 V 0 0 2 4 6 8 10 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 2.0 Common source VDS = 20 V pulse test 20 VDS - VGS Common source Tc = 25C pulse test 1.6 (V) Drain-source voltage VDS 16 ID (A) 1.2 12 Drain current 0.8 100 0.4 25 Tc = -55C 0 0 2 4 6 8 10 8 4 0.25 0 ID = 1 A 0.5 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 10 Common source 5V DS = 20 V 3 pulse test Tc = -55C 25 100 RDS (ON) - ID 50 Common source (S) Yfs Forward transfer admittance () RDS (ON) 1 0.5 0.3 Drain-source on resistance 30 Tc = 25C pulse test 10 5 3 VGS = 10, 15 V 0.1 0.05 0.02 0.1 0.3 0.5 1 3 5 10 1 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2002-03-04 2SK3472 RDS (ON) - Tc () 16 Common source VGS = 10 V pulse test 10 Common source IDR - VDS Drain-source on resistance RDS (ON) (A) 12 3 pulse test IDR 8 0.5 2 Drain reverse current ID = 1 A 1 0.3 0.25 0.1 10 3 1 0.03 1 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2 0 -80 -40 0 40 80 160 0.01 0 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 500 300 5 Ciss Vth - Tc Common source VDS = 10 V ID = 1 mA pulse test Gate threshold voltage Vth (V) 4 (pF) 100 50 30 Coss 10 5 3 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10 3 Capacitance C 2 1 Crss 30 50 100 0 -80 -40 0 40 80 120 160 1 0.1 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 40 500 Dynamic input/output characteristics Common source ID = 1 A Tc = 25C pulse test VDS 90 300 VDS = 360 V 12 180 20 (W) (V) 400 16 Drain power dissipation Drain-source voltage VDS 20 200 VGS 100 8 10 4 0 0 40 80 120 160 200 0 0 20 40 60 80 0 100 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-03-04 Gate-source voltage VGS PD 30 (V) 2SK3472 rth - tw 10 Normalized transient thermal impedance 3 rth (t)/Rth (ch-a) 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 Single pulse PDM t T Duty = t/T Rth (ch-c) = 6.25C/W 1 10 Pulse width tw (S) Safe operating area 30 150 EAS - Tch (mJ) Avalanche energy EAS ID max (pulsed) * ID max (continuous) 1 ms * 100 s * DC operation Tc = 25C *: Single nonrepetitive pulse Tc = 25C 10 120 3 ID (A) 90 1 Drain current 60 0.3 30 0.1 0 25 50 75 100 125 150 00.3 Curves must be derated linearly with increase in temperature. 00.1 0.1 1 Channel temperature (initial) Tch VDSS max 10 100 (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 VDD = 90 V, L = 203 mH AS = Wave form 1 B VDSS L I2 B 2 VDSS - VDD 5 2002-03-04 2SK3472 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-03-04 |
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