 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3810DCSM DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS 4.32 0.13 (0.170 0.005) 2.29 0.20 (0.09 0.008) 1.65 0.13 (0.065 0.005) 0.64 0.08 (0.025 0.003) 1.40 0.15 (0.055 0.006) 2.54 0.13 (0.10 0.005) 2 1 3 4 5 * SPACE QUALITY LEVELS OPTIONS A 6 0.23 rad. (0.009) 1.27 0.13 (0.05 0.005) 6.22 0.13 (0.245 0.005) A= LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 APPLICATIONS: Suitable for use in high gain, low noise differential amplifier applications. ABSOLUTE MAXIMUM RATINGS VCBO VCEO VEBO IC PD TSTG NOTES 1. Base - Emitter Diode Open Circuited. (Tamb = 25C unless otherwise stated) Collector - Base Voltage Collector - Emitter Voltage 1 Emitter - Base Voltage Collector Current Total Device Dissipation Derate above 25C Storage Temperature Range EACH SIDE TOTAL DEVICE -60V -60V -5V -50mA 500mW 600mW 2.9mW / C 3.4mW / C -65 to 200C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/95 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter V(BR)CBO V(BR)EBO ICBO IEBO SEME 2N3810DCSM Test Conditions 1 IE = 0 IB = 0 IC = 0 IE = 0 TA = 150C VEB = -4V IC = -10A IC = -100A IC = 0 VCE = -5V VCE = -5V TA = -55C IC = -500A IC = -1mA IC = -10mA IC = -100A VCE = -5V VCE = -5V VCE = -5V * VCE = -5V IC = -100A IC = -1mA IC = -100A IC = -1mA Min. -60 -60 -5 Typ. Max. Unit INDIVIDUAL TRANSISTOR CHARACTERISTICS Collector - Base Breakdown Voltage IC = -10A V(BR)CEO* Collector - Emitter Breakdown Voltage IC = -10mA Emitter - Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current IE = -10A VCB = -50V V -10 -10 -20 nA A nA 100 150 75 150 150 125 -0.7 -0.7 -0.8 -0.2 -0.25 3 30 600 -- 25 x 10 -4 450 450 450 -- hFE DC Current Gain VBE Base - Emitter Voltage IB = -10A IB = -100A IB = -10A IB = -100A V VCE(sat) hie hfe hre hoe Collector - Emitter Saturation Voltage Small Signal Common - Emitter Input Impedance Small Signal Common - Emitter Current Gain Small Signal Common - Emitter Reverse Voltage Gain Small Signal Common - Emitter Output Admittance V k VCE = -10V 150 IC = -1mA f = 1kHz 5 VCE = -5V IC = -500A IC = -1mA IE = 0 IC = 0 1 -- 1 5 4 pF 8 60 mho |hfe| Small Signal Common - Emitter Current Gain f = 30MHz VCE = -5V f = 100MHz VCB = -5V f = 100kHz VEB = -0.5V f = 100kHz Cobo Cibo NOTES Common - Base Open Circuit Output Capacitance Common - Base Open Circuit Input Capacitance * Pulse Test: tp = 300s, 2%. 1) Terminals not under test are open circuited under all test conditions. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/95 LAB ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter hFE1 hFE2 |VBE1 - VBE2| SEME 2N3810DCSM Test Conditions IC = -100A Min. 0.9 Typ. Max. Unit 1 5 3 0.8 mV -- TRANSISTOR MATCHING CHARACTERISTICS Static Forward Current Gain VCE = -5V Balance Ratio Base - Emitter Voltage Differential |(VBE1 - VBE2)TA| Base - Emitter Voltage Differential See Note 2. VCE = -5V IC = -10A to -10mA VCE = -5V VCE = -5V TA1 = 25C VCE = -5V TA1 = 25C IC = -100A IC = -100A TA2 = -55C IC = -100A TA2 = 125C mV 1 OPERATING CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter Test Conditions 1 IC = -100A f = 100Hz IC = -100A f = 1kHz IC = -100A f = 10kHz IC = -100A 3.5 dB Min. Typ. Max. Unit INDIVIDUAL TRANSISTOR CHARACTERISTICS VCE = -10V RG = 3k VCE = -10V F Spot Noise Figure RG = 3k VCE = -10V RG = 3k VCE = -10V _ F Average Noise Figure RG = 3k 7 Noise Bandwidth = 20Hz 3 dB Noise Bandwidth = 200Hz 2.5 Noise Bandwidth = 2kHz Noise Bandwidth = 15.7kHz See Note 3. NOTES 1) Terminals not under test are open circuited under all test conditions. 2) The lower of the two readings is taken as hFE1. 3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency rolloff of 6dB / octave. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/95 LAB THERMAL INFORMATION 0.8 PT M axim um Continuous D issipation (W ) 0.7 0.6 0.5 TO TA L D EVIC E SEME 2N3810DCSM 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175 200 EAC H TR AN SISTO R TA Free Air Temperature (C) Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/95 |
Price & Availability of 2N3810DCSM
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |