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| MCC Features * * * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# SF500 GP thru SF504 GP 5 Amp Surper Fast Recovery Rectifiers 50 - 400Volts DO-201AD Low forward voltage, high current capability Hermetically sealed High surge capability Superfast recovery times-epitaxial construction * * * Maximum Ratings Operating Temperature: -55C to +150C Storage Temperature: -55C to +150C Maximum Thermal Resistance; 25.0C/W Junction To Lead Microsemi Catalog Number Device Marking Maximum Reccurrent Peak Reverse Voltage 50V 100V 200V 300V 400V Maximum RMS Voltage Maximum DC Blocking Voltage 50V 100V 200V 300V 400V D SF500GP SF500GP SF501GP SF501GP SF502GP SF502GP SF503GP SF503GP SF504GP SF504GP 35V 70V 140V 210V 280V A Cathode Mark B Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage SF500~SF502 SF503~SF504 D IF(AV) IFSM 5.0A 150A TA = 55C 8.3ms, half sine C VF .95V 1.25V 5.0uA 300uA IFM = 5.0A; TA = 25C* TA = 25C TA = 125C Test Conditions IF=.5A,IR=1A,Irr=.25A DIM A B C D DIMENSIONS INCHES MIN ----.048 1.000 MM MIN ----1.20 25.40 Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time Typical Junction Capacitance IR MAX .370 .250 .052 --- MAX 9.50 6.40 1.30 --- NOTE T rr CJ 35nS 45pF Measured at 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 sec, Duty cycle 2% www.mccsemi.com MCC SF500GP thru SF504GP +0.5A AVERAGE FORWARD CURRENT (10)-AMP (10)-AAV trr 0 -0.25 8.0 6.0 ON HEAT SINK 4.0 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms 2.0 ON PCB -1.0 SET TIME BASE FOR 50 ns/cm 1cm 0 50 75 100 125 150 175 200 AMBIENT TEMPERATURE, J Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM INSTANTANEOUS FORWARD CURRENT AMPERES Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING 100 SF500GP ~ SF502GP 10 AVERAGE FORWARD CURRENT, AMPERES 5.0 4.0 3.0 2.0 1.0 0 0 50 100 150 SF503GP ~ SF504GP 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 CASE TEMPERATURE, J INSTANTANEOUS FORWARD VOLTAGE, VOLTS Fig. 3-MAXIMUM AVERAGE FORWARD CCURRENT RATING PEAK FORWARD SURGE CURRENT, AMPERES Fig. 4-FORWARD CURRENT DERATING CURVE JUNCTION CAPACITANCE, pF 200 y 150 125 75 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 35 1 5 10 50 100 100 TJ = 25J f = 1.0MHz Vsig = 50mVp-p 10 5 1 10 REVERSE VOLTAGE, VOLTS 100 NUMBER OF CYCLES AT 60Hz Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT Fig. 6-TYPICAL JUNCTION CAPACITANCE www.mccsemi.com |
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