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| FGL60N170D October 2001 IGBT FGL60N170D General Description Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. Features * * * * High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven C G TO-264 G C E TC = 25C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C FGL60N170D 1700 25 60 30 180 15 150 200 80 -55 to +150 -55 to +150 300 Units V V A A A A A W W C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.625 0.83 25 Units C/W C/W C/W (c)2001 Fairchild Semiconductor Corporation FGL60N170D Rev. B FGL60N170D Electrical Characteristics of IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-off Current G-E Leakage Current VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1700 ------3.0 100 V mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 60A, VGE = 15V 3.5 5.0 5.0 7.5 6.0 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2500 220 80 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 60A, RG = 51, VGE = 15V, Resistive Load, TC = 25C VCE = 600 V, IC = 60A, VGE = 15V -------100 350 200 100 120 20 45 200 700 400 300 180 30 70 ns ns ns ns nC nC nC Electrical Characteristics of DIODE T Symbol VFM trr IR CJ Parameter Diode Forward Voltage Diode Reverse Recovery Time Inatantaneous Reverse Current Junction Capacitance C = 25C unless otherwise noted Test Conditions IF = 15 A IF = 60 A IF = 60 A, di/dt = 20 A/uS VRRM = 1700V VCE = 10V, VGE = 0V, f = 1MHz Min. ------ Typ. 1.35 1.92 0.6 0.3 80 Max. 1.6 2.2 1.0 5 -- Units V us uA pF (c)2001 Fairchild Semiconductor Corporation FGL60N170D Rev. B FGL60N170D 100 Common Emitter TC = 25 C 80 o 120 20V 15V 10V 100 Common Emitter VGE = 15V TC = 25 C TC = 125 C 80 o o Collector Current, IC [A] 8V 60 Collector Current, IC [A] 60 40 40 20 VGE = 6V 0 0 2 4 6 8 20 0 0 2 4 6 8 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Chacracteristics Fig 2. Typical Saturation Voltage Characteristics 7 Common Emitter VGE = 15V Collector - Emitter Voltage, VCE [V] 6 IC = 80A 5000 Common Emitter VGE =0V, f=1MHz 4000 TC=25 C o Capacitance [pF] 5 IC= 60A 3000 Cies 4 IC = 30A 3 2000 Coes 1000 Cres 2 25 50 75 100 o 0 125 150 1 10 Case Temperature, TC [ C] Collector - Emitter Voltage, VCE [V] Fig 3. Collector to Emitter Saturation Voltage vs. Case Temperature Fig 4. Typical Capacitance vs. Collector to Emitter Voltage 20 Common Emitter T C =25 C 16 o 20 Common Emitter T C =125 C 16 o Collector - Emitter Voltage, V [V] CE Collector - Emitter Voltage, VCE [V] 12 12 8 80A 60A 8 80A 60A 4 30A 0 4 30A 0 0 4 8 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE (c)2001 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FGL60N170D Rev. B FGL60N170D Common Emitter VCC = 600V, VGE = 15V IC = 60A 1000 TC = 25 C tr o Common Emitter VCC = 600V, VGE = 15V IC = 60A 1000 TC = 25 C TC = 125 C tf o o Switching Time [ns] td(on) 100 Switching Time [ns] TC = 125 C o td(off) 100 10 10 100 10 100 Gate Resistance, RG [] Gate Resistance, R G [] Fig 7. Turn on Characteristics vs. Gate Resistance Fig 8. Turn off Characteristics vs. Gate Resistance Common Emitter VCC = 600V, VGE = 15V IC = 60A Common Emitter VGE = 15V, RG = 51 1000 TC = 25 C TC = 125 C tr o o Switching Loss [J] TC = 125 C o Switching Time [ns] 10000 TC = 25 C o Eoff 100 td(on) 1000 Eon 10 10 100 20 30 40 50 60 70 80 90 Gate Resistance, R G [] Collector Current, IC [A] Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn on Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 51 1000 TC = 25 C o o Common Emitter VGE = 15V, RG = 51 10000 TC = 25 C TC = 125 C o o Switching Time [ns] tf Switching Loss [J] TC = 125 C Eoff 1000 Eon td(off) 100 100 20 30 40 50 60 70 80 90 20 30 40 50 60 70 80 90 Collector Current, IC [A] Collector Current, I C [A] Fig 11. Turn off Characteristics vs. Collector Current (c)2001 Fairchild Semiconductor Corporation Fig 12. Switching Loss vs. Collector Current FGL60N170D Rev. B FGL60N170D 16 14 Common Emitter R L = 10, V CC = 600V T C = 25 C o Ic MAX (Pulsed) 100 50s Ic MAX (Continuous) Gate - Emitter Voltage, VGE [V] Collector Current, I C [A] 12 10 8 6 4 2 0 0 25 50 75 100 125 150 100s 10 1ms DC Operation 1 Single Nonrepetitive 0.1 Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 o 0.01 Gate Charge, Qg [nC] Collector - Emitter Voltage, V CE [V] Fig 13. Gate Charge Characteristics Fig 14. Turn off SOA Characteristics 10 1.0 100 IECF = 60A TC = 25 C o Reverse Recovery Time , t rr [s] 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Irr 0 40 80 120 160 200 trr 80 70 60 50 40 30 20 10 0 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 1E-4 1E-3 0.01 0.1 1 10 Rectangulasr Pulse Duration [sec] di/dt [A/s] Fig 15. Transient Thermal Impedance of IGBT Fig 16. Typical Trr vs. di/dt 14 1.2 TC = 25 C o 12 10 Irr Reverse Recovery Current , Irr [A] di/dt = 20A/s 100 Reverse Recovery Time , trr [s] Forward Current, IF [A] 10 TC = 125 C o 0.8 8 6 0.4 trr 4 2 1 0.0 10 20 30 40 50 60 0 0.1 0 1 2 3 IECF [A] Forward Voltage, V F [V] Fig 17. Typical Trr vs. Forward Current Fig 18. Typical Forward Voltage Drop vs. Forward Current FGL60N170D Rev. B (c)2001 Fairchild Semiconductor Corporation Reverse Recovery Current , I rr [A] 0.9 90 FGL60N170D 10000 1000 400 350 Reverse Current, I R [uA] 100 10 1 0.1 0.01 1E-3 0 300 600 900 1200 1500 1700 Capacitance, CJ [pF] T C = 150 C o 300 250 200 150 100 50 0 0.1 1 10 100 T C = 25 C o Reverse Voltage, V R [V] Reverse Voltage, V R [V] Fig 19. Reverse Current vs. Reverse Voltage Fig 20. Capacitance vs. Reverse Voltage For Diode (c)2001 Fairchild Semiconductor Corporation FGL60N170D Rev. B FGL60N170D Package Dimension TO-264 6.00 0.20 20.00 0.20 (4.00) (8.30) (8.30) (2.00) (1.00) (9.00) (9.00) (11.00) (0.50) 20.00 0.20 2.50 0.10 1.50 0.20 (R1 (7.00) (7.00) 4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 -0.10 +0.25 (2.00) 20.00 0.50 0) 2.0 (R o3.3 0 0 .20 .00 ) (1.50) 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.10 +0.25 2.80 0.30 5.00 0.20 3.50 0.20 (0.15) (1.50) (2.80) Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation FGL60N170D Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H4 |
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