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Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * Low thermal resistance
BYV32E, BYV32EB series
SYMBOL
QUICK REFERENCE DATA
VR = 150 V/ 200 V VF 0.85 V IO(AV) = 20 A IRRM = 0.2 A trr 25 ns
a1 1 k2
a2 3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32E series is supplied in the SOT78 conventional leaded package. The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peaqk repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave; = 0.5; Tmb 115 C t = 25 s; = 0.5; Tmb 115 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature CONDITIONS BYV32E / BYV32EB -40 MIN. -150 150 150 150 20 20 125 137 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A C C
IRRM IRSM Tstg Tj
1 It is not possible to make connection to pin 2 of the SOT404 package
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k
BYV32E, BYV32EB series
MIN. -
MAX. 8
UNIT kV
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes SOT78 package, in free air SOT404 and SOT428 packages, pcb mounted, minimum footprint, FR4 board MIN. TYP. MAX. UNIT 60 50 2.4 1.6 K/W K/W K/W K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr1 trr2 Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150C IF = 20 A VR = VRWM; Tj = 100 C VR = VRWM IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 0.72 1.00 0.2 6 8 20 10 1 MAX. 0.85 1.15 0.6 30 12.5 25 20 UNIT V V mA A nC ns ns V
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV32E, BYV32EB series
I
dI F dt
F
0.5A IF
t
rr time
0A I rec = 0.25A IR trr2
Q I R I
s
10%
100%
rrm
I = 1A R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
I
F
15
PF / W
Vo = 0.7 V Rs = 0.0183 Ohms
BYV32
Tmb(max) / C 114 D = 1.0
10
0.5 0.2 0.1
126
time VF V VF time fr
5
I
tp
D=
tp T t
138
T
0
0
5
IF(AV) / A
10
150 15
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PF / W
Vo = 0.7 V Rs = 0.0183 Ohms
R
10
BYV32 1.9 2.2
Tmb(max) / C a = 1.57
126
8
2.8 4
130.8
D.U.T. Voltage Pulse Source
6
135.6
4
140.4
Current shunt
to 'scope
2
145.2
0
0
2
4
IF(AV) / A
6
8
150 10
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYV32E, BYV32EB series
trr / ns 1000
100 Qs / nC
100
IF=10A
IF=10A 5A 2A 1A 10
IF=1A 10
1
1.0
1 10 dIF/dt (A/us) 100
1.0
10 -dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 C; per diode
Fig.10. Maximum Qs at Tj = 25 C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A 1 IF=1A
1
0.1
0.1
0.01
P D tp D= tp T t
0.01 1 10 -dIF/dt (A/us) 100
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV32E
10s
Fig.8. Maximum Irrm at Tj = 25 C; per diode
Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp).
30
IF / A Tj=150 C Tj=25 C
20
10
typ max
0 0
0.5
VF / V
1
1.5
Fig.9. Typical and maximum forward characteristic per diode; IF = f(VF); parameter Tj
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BYV32E, BYV32EB series
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 1.4 g
10.3 max
BYV32E, BYV32EB series
4.5 max 1.4 max
11 max 15.4
2.5 0.85 max (x2) 2.54 (x2)
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5 2.0
3.8
5.08
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes 1. Epoxy meets UL94 V0 at 1/8".
July 1998
6
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYV32E, BYV32EB series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
July 1998
7
Rev 1.200

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