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| 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Output power: PO = 630 mW (min) Gain: GP = 14.9dB (min) Drain efficiency: D = 45% (min) * * * Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 20 5 1 3 150 -45~150 Unit V V A W C C Note 1: Tc = 25C (When mounted on a 1.6 mm glass epoxy PCB) JEDEC JEITA TOSHIBA SC-62 2-5K1D Marking Type name W B 1 2 3 1. Gate 2. Source 3. Drain Caution Please take care to avoid generating static electricity when handling this transistor. 1 2002-01-09 2SK3475 Electrical Characteristics (Ta = 25C) Characteristics Drain cut-off current Gate-source leakage current Threshold voltage Drain-source on-voltage Forward transconductance Input capacitance Output capacitance Output power Drain efficiency Power gain Low voltage output power Symbol IDSS IGSS Vth VDS (ON) Yfs Ciss Coss PO hD GP POL Test Condition VDS = 20 V, VGS = 0 V VGS = 10 V VDS = 7.2 V, ID = 2 mA VGS = 10 V, ID = 75 mA VDS = 7.2 V, IDS = 208 mA VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, Iidle = 50 mA (VGS = adjust), f = 520 MHz, Pi = 20 mW, VDS = 6.0 V, Iidle = 50 mA (VGS = adjust), f = 520 MHz, Pi = 20 mW, Min 3/4 3/4 1.9 3/4 3/4 3/4 3/4 630 45 14.9 500 Typ. 3/4 3/4 2.4 87 260 11 12.5 3/4 3/4 3/4 3/4 Max 5 5 2.9 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Unit mA mA V mV mS pF pF mW % dB mW Note 1: These characteristic values are measured using measurement tools specified by Toshiba. (Test Condition: f = 520 MHz, VDS = 7.2 V, Iidle = 50 mA, Pi = 20 mW) C5 Pi ZG = 50 W C1 C2 C7 L3 C8 C9 L4 C3 C10 C4 L1 L2 C6 PO ZL = 50 W Output Power Test Fixture R1 VGS VDS L1: f0.8 mm enamel wire, 2.2ID, 1T L2: f0.8 mm enamel wire, 2.2ID, 1T L3: f0.8 mm enamel wire, 5.5ID, 4T L4: f0.8 mm enamel wire, 5.5ID, 8T R1: 1.5 kW C1: 10 pF C2: 10 pF C3: 9 pF C4: 6 pF C5: 2200 pF C6: 2200 pF C7: 10 mF C8: 10000 pF C9: 10 mF C10: 10000 pF 2 2002-01-09 2SK3475 PO - Pi 2.5 f = 520 MHz Iidle = 50 mA Tc = 25C 9.6 V 1.5 100 f = 520 MHz Iidle = 50 mA Tc = 25C VDS = 6.0 V 60 7.2 V 40 9.6 V hD - Pi (W) 1.0 7.2 V VDS = 6.0 V 0.5 Drain efficiency DD 80 100 Output power PO (%) 2.0 80 20 0 0 20 40 60 0 0 20 40 60 80 100 Input power Pi (mW) Input power Pi (mW) PO - Pi 1.4 1.2 f = 520 MHz VDS = 7.2 V Tc = 25C 100 f = 520 MHz VDS = 7.2 V Tc = 25C hD - Pi 70 mA (W) 1.0 Iidle = 30 mA 0.8 0.6 0.4 0.2 0 0 Drain efficiency DD 50 mA (%) 80 Iidle = 30 mA 70 mA PO 60 50 mA 40 Output power 20 20 40 60 80 100 0 0 20 40 60 80 100 Input power Pi (mW) Input power Pi (mW) PO - Pi 1.4 1.2 f = 520 MHz VDS = 7.2 V Iidle = 50 mA -20C 60C 25C 0.6 Tc = 100C 0.4 0.2 0 0 0 0 100 f = 520 MHz VDS = 7.2 V Iidle = 50 mA hD - Pi (W) 1.0 0.8 (%) 80 -20C Drain efficiency DD PO 60 60C 40 25C Tc = 100C Output power 20 20 40 60 80 100 20 40 60 80 100 Input power Pi (mW) Input power Pi (mW) Note 2: These are only typical curves and devices are not necessarily guaranteed at these curves. 3 2002-01-09 2SK3475 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 4 2002-01-09 |
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