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Transistors
2SC2188
Silicon NPN epitaxial planar type
For intermediate frequency amplification of TV image
Unit: mm
6.90.1
(0.4)
2.50.1 (1.0)
(1.0) 3.50.1 2.00.2 2.40.2
(1.5) (1.5)
s Features
q q q
1.00.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings 45 35 4 50 600 150 -55 ~ +150
Unit V
3 2
(2.5)
1
V V mA mW C C
(2.5)
1:Base 2:Collector 3:Emitter
1.250.05
s Absolute Maximum Ratings
(0.85)
0.450.05
(Ta=25C)
0.550.1
M-A1 Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Power gain
(Ta=25C)
Symbol ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cre PG Conditions VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = -10mA IC = 20mA, IB = 2mA VCB = 10V, IE = -10mA, f = 100MHz VCE = 10V, IC = 1mA VCB = 10V, IE = -10mA, f = 58MHz 18 300 500 1.5 45 35 4 20 50 100 0.5 V MHz pF dB min typ max 10 Unit A V V V
4.10.2
High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
R 0.9 R 0.7
4.50.1
Publication date: August 2002
SJC00110AED
1
2SC2188
PC -- Ta
800 80 70
IC -- VCE
60
IC -- VBE
25C VCE=10V
Collector power dissipation PC (mW)
700
Collector current IC (mA)
600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160
60 1.6mA 50 40 30 20 10 0 0 2 4 6 8 10 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA
Collector current IC (mA)
IB=2.0mA 1.8mA
50 Ta=75C 40 -25C
30
20
10
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C IC/IB=10 120
hFE -- IC
600 VCE=10V VCB=10V Ta=25C
fT -- I E
Forward current transfer ratio hFE
100
Transition frequency fT (MHz)
10 30 100
500
80 Ta=75C 60 25C 40 -25C
400
300
200
20
100
0.3
1
3
10
30
100
0 0.1
0.3
1
3
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C
Cre -- VCE
Common emitter reverse transfer capacitance Cre (pF)
2.4 IC=1mA f=10.7MHz Ta=25C 30
PG -- IE
VCB=10V f=58MHz Ta=25C
3.0
2.5
2.0
25
2.0
1.6
Power gain PG (dB)
1 3 10 30 100
20
1.5
1.2
15
1.0
0.8
10
0.5
0.4
5
0 1 3 10 30 100
0
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
Emitter current IE (mA)
2
SJC00110AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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