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| NPN SILICON PLANAR RF TRANSISTOR ISSUE 2 MARCH 94 FEATURES * High fT, 1.3GHz * Low noise < 5dB at 500MHz * Power output at 500MHz >175mW ZTX325 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Mean Collector Current (Averaged over 100s) Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IAV ICM Ptot Tj:Tstg 30 15 2.5 25 50 350 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW C E -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Static Forward Current Transfer Ratio Transition Frequency Capacitance, Collector Depletion Layer Capacitance, Emitter Depletion Layer Feedback Capacitance Feedback Time Constant SYMBOL VCEO(SUS) V(BR)EBO ICBO ICES hFE fT CTC CTE -Cre rbbCbc 2.0 3-161 0.85 12 25 20 1.0 1.3 1.5 2.0 MIN. 15 5 10 10 150 125 GHz GHz pF pF pF ps TYP. MAX. UNIT V V nA A CONDITIONS. IC=10mA, IB=0 IE=10A, IC=0 VCB=15V, IE=0 VCE=15V, VBE=0 IC=2mA, VCE=1V* IC=25mA, VCE=1V* IC=2mA, VCE=5V, f=400MHz IC=25mA, VCE=5V, f=400MHz VCB=10V, IE=Ie=0, f=1MHz VEB=0.5V, IC=Ic=0, f=1MHz VCE=5V, IC=2mA, f=1MHz VCB=5V, -IE=2mA, f=10.7MHz ZTX325 ELECTRICAL CHARACTERISTICS PARAMETER Noise Figure Intermodulation Distortion Output Power (at Tcase=25C)* SYMBOL N dim -53 MIN. TYP. MAX. UNIT 5.0 dB dB CONDITIONS. f=500MHz, VCE=5V, IC=2mA, RS=50 IC=14mA, VCE=6V, f=217MHz V0=100mV, RL=37.5, f1=183MHz, f2=200MHz VCE=13.5V, IC=22.5mA Pin=25mW, f=500MHz PO 175 mW *It is essential that care be taken to reduce steady state current when no h.f. signal is applied. TYPICAL CHARACTERISTICS 80 f=400MHz 2 VCE=10V 1 VCE=5V hFE - Normalised Gain 3 f T - (GHz) 60 VCE=10V 40 20 0 0.1 1 10 100 1000 1 10 100 1m 10m 100m IC - Collector Current (mA) IC - Collector Current (A) fT v IC hFE v IC 2.0 f=1MHz CRE - (pF) 1.5 1.0 0.5 0 10 20 30 VCE - (V) CRE v VCE 3-162 |
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