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| BB 914 Silicon Variable Capacitance Diode * For FM radio tuner with extended frequency band * High tuning ratio low supply voltage (car radio) * Monolitic chip (common cathode) for perfect dual diode tracking * Good linearity of C-V curve * High figure of merit Type BB 914 Marking Ordering Code SMs Q62702-B673 Pin Configuration 1 = A1 2 = A2 3=C1/2 Package SOT-23 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current, TA 60C Operating temperature range Storage temperature Thermal Resistance Junction - ambient Symbol Values 18 20 50 - 55 ... + 125 - 55 ... + 150 600 mA C Unit V VR VRM IF Top Tstg RthJA K/W Semiconductor Group 1 Oct-10-1996 BB 914 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 20 200 nA VR = 16 V, TA = 25 C VR = 16 V, TA = 60 C AC characteristics Diode capacitance CT 42.5 17.6 43.75 18.7 2.34 0.28 45 19.75 pF VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz Capacitance ratio CT2/CT8 2.28 CT/CT 1.5 2.42 2) % - VR = 2 V, VR = 8 V, f = 1 MHz Capacitance matching Series resistance VR = 2 V, VR = 8 V, f = 1 MHz rs CT = 38 pF, f = 100 MHz Semiconductor Group 2 Oct-10-1996 BB 914 Diode capacitance per diode CT = f(VR) f = 1MHz 100 pF Capacitance ratio CTref/CT = f(VR) Vref = Parameter, f = 1MHz 5.0 - CT 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V 10 CTref/CT4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 1V 2V 3V VR V VR 10 Package Semiconductor Group 3 Oct-10-1996 |
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