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| Datasheet File OCR Text: |
| NTE483 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and power gain over the complete range of 806-866MHz. Features: D Designed for 806-866MHz Mobile Equipment D 18W Min., with Greater than 6dB Gain at 836MHz D Withstands 10:1 VSWR at Rated Operating Conditions D Matched Input Technology D Common Base Absolute Maximum Ratings: (TC = +25C unless othrwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (At +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8C/W Electrical Characteristic: (TC = +25C unless otherwise specified) Parameter Static Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1 V(BR)CES IC = 50mA, VBE = 0, Note 1 Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain V(BR)EBO IE = 10mA, iC = 0 ICES hFE VCE = 15V, VBE = 0 VCE = 6V, IC = 1A 16 36 4 - 20 - - - - - - - - 10 - V V V mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed through 25mH indicator. Electrical Characteristic (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Output Power Power Gain Impedance PO PG Zs Zcl Output Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz VCE = 12.5V, f = 836MHz VCE = 12.5V, f = 836MHz VCE = 12.5V, Pi = 15W, f = 836MHz 18 6 - - - - - 3.0- j4.8 1.6- j2.5 20 - - - - - W dB pF Symbol Test Conditions Min Typ Max Unit .725 (18.42) .325 (8.28) Max .195 (4.97) Max .130 (3.3) Dia B C .960 (24.38) Max E B .225 (5.72) Max .380 (5.72) Dia Max .285 (7.25) Max .180 (4.57) Max .730 (18.54) .960 (24.38) Max |
Price & Availability of NTE483
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