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 Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0204
Features
* Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 1.8 GHz * 11.0 dB Typical Gain at 1.0 GHz * Unconditionally Stable (k>1) * Low Cost Plastic Package
designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
04A Plastic Package
Description
The MSA-0204 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is
Typical Biasing Configuration
R bias VCC > 7 V
RFC (Optional) 4 C block 3 IN 1
MSA
C block OUT Vd = 5 V
2
5965-9696E
6-270
MSA-0204 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 325 mW +13 dBm 150C -65 to 150C Thermal Resistance[2,4]: jc = 90C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 11.1 mW/C for TC > 121C. 4. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP
Parameters and Test Conditions: Id = 25 mA, ZO = 50
Power Gain (|S21| 2) f = 0.1 GHz f = 0.5 GHz f = 1.0 GHz f = 0.1 to 1.4 GHz f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz
Units
dB
Min.
10.0
Typ.
12.5 12.0 11.0 1.0 1.8 1.3:1 1.3:1
Max.
GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient
dB GHz
dB dBm dBm psec V mV/C 4.5
6.5 4.5 17.0 150 5.0 -8.0 5.5
Note: 1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following page.
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MSA-0204 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 25 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang
0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0
.12 .12 .11 .11 .10 .10 .09 .07 .05 .02 .08 .14 .35 .59
170 160 140 121 104 84 42 16 17 96 112 100 72 51
12.5 12.4 12.2 11.9 11.6 11.2 10.2 9.1 8.2 7.3 6.5 5.7 4.0 1.6
4.20 4.16 4.05 3.93 3.78 3.62 3.22 2.86 2.57 2.32 2.12 1.93 1.58 1.20
174 168 156 144 134 123 99 77 63 46 29 12 -22 -54
-18.5 -18.5 -18.1 -17.9 -17.6 -17.0 -16.1 -14.8 -13.9 -13.2 -12.4 -11.8 -11.2 -11.3
.119 .119 .124 .127 .132 .142 .157 .181 .202 .220 .239 .258 .276 .272
2 4 6 8 12 14 16 15 16 13 7 0 -15 -33
.12 .12 .12 .12 .12 .13 .12 .11 .09 .08 .09 .11 .17 .32
-7 -14 -29 -42 -52 -61 -79 -96 -115 -141 -167 171 120 80
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25C
(unless otherwise noted)
14 12 Gain Flat to DC 10 G p (dB) 8 6 4 10 2 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 0 1 2 3 Vd (V) 4 5 6 4 15 20 25 30 I d (mA) 35 40 6 I d (mA) 40 TC = +85C TC = +25C 30 T = -25C C G p (dB) 14
12
10
20
8 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz
Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 25 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
G p (dB)
12 11 10 8 NF 7 6 7 6 P1 dB 5 4 3 -25 0 +25 +55 +85 TEMPERATURE (C) NF (dB) GP 8 P1 dB (dBm)
12 10 I d = 40 mA
7.5
7.0 8 NF (dB) 6 4 2 I d = 18 mA 0 0.1 0.2 0.3 5.5 0.5 1.0 2.0 4.0 0.1 I d = 25 mA 6.0 6.5
I d = 18 mA I d = 25 mA I d = 40 mA
P1 dB (dBm)
5 4 3
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=25mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
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04A Plastic Package Dimensions
12.39 0.76 (0.488 0.030) 4 GROUND
0.76 (0.030) DIA. RF INPUT 0.76 (0.030) 1 4.29 (0.169)
21
3 0.96 (0.038)
RF OUTPUT & BIAS
2
GROUND
0.51 (0.020)
NOTES: (UNLESS OTHERWISE SPECIFIED) 1. DIMENSIONS ARE IN MILLIMETERS (INCHES) 2. TOLERANCES mm .XX = 0.13 in .XXX = 0.005 0.20 0.050 (0.008 0.002)
2.54 0.25 (0.100 0.010)
3.68 (0.145) DIMENSIONS ARE IN MILLIMETERS (INCHES).
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