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| DISCRETE SEMICONDUCTORS DATA SHEET MAC223 series Triacs Product specification July 2001 Philips Semiconductors Product specification Triacs GENERAL DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. MAC223 series QUICK REFERENCE DATA SYMBOL PARAMETER MAC223 VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX MAX. UNIT A6 400 25 230 A8 600 25 230 V A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION main terminal 1 PIN CONFIGURATION tab SYMBOL T2 main terminal 2 gate main terminal 2 1 23 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MAC223 VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 91 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ -40 MIN. A6 4001 25 190 230 180 50 50 50 10 2 5 5 0.5 150 125 MAX. A8 6001 V A A A A2s A/s A/s A/s A/s A V W W C C UNIT I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. July 2001 2 Rev 1.000 Philips Semiconductors Product specification Triacs THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - MAC223 series TYP. 60 MAX. 1.0 1.4 - UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ T2+ T2MIN. 0.25 TYP. 6 10 11 23 8 30 18 15 7 12 1.3 0.7 0.4 0.1 MAX. 50 50 50 75 40 60 40 60 30 30 1.55 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 30 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt dVcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 C; IT(RMS) = 25 A; dIcom/dt = 9 A/ms; gate open circuit ITM = 30 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. 100 TYP. 300 10 2 MAX. UNIT V/s V/s s July 2001 3 Rev 1.000 Philips Semiconductors Product specification Triacs MAC223 series 40 Ptot / W Tmb(max) / C 85 30 25 IT(RMS) / A BTA140 91 C = 180 30 1 120 90 60 95 20 105 20 30 15 10 10 115 5 0 125 30 0 5 10 15 IT(RMS) / A 20 25 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. ITSM / A Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. IT(RMS) / A 1000 50 40 30 100 dI T /dt limit T2- G+ quadrant IT T 10 10us I TSM time 20 10 Tj initial = 25 C max 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. ITSM / A IT 150 T ITSM time Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 91C. VGT(Tj) VGT(25 C) 200 1.6 1.4 1.2 1 0.8 Tj initial = 25 C max 100 50 0.6 0 1 10 100 Number of cycles at 50Hz 1000 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. July 2001 4 Rev 1.000 Philips Semiconductors Product specification Triacs MAC223 series 5 IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+ 80 70 IT / A Tj = 125 C Tj = 25 C BTA140 4 60 Vo = 1.073 V Rs = 0.015 ohms typ max 50 3 40 2 30 20 1 10 0 0 -50 0 50 Tj / C 100 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 10 Zth j-mb (K/W) BTA140 3 2.5 2 1.5 1 1 unidirectional bidirectional 0.1 P D tp 0.01 0.5 0 -50 0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dV/dt (V/us) 1000 3 2.5 2 1.5 1 0.5 off-state dV/dt limit 100 dIcom/dt = 25 A/ms 10 20 15 12 9.0 7.0 0 -50 0 50 Tj / C 100 150 1 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. July 2001 5 Rev 1.000 Philips Semiconductors Product specification Triacs MAC223 series Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 2001 6 Rev 1.000 Philips Semiconductors Product specification Triacs DEFINITIONS Data sheet status Objective specification Product specification Limiting values MAC223 series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 2001 7 Rev 1.000 |
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