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DG9411
New Product
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
FEATURES
D D D D D D D Low Voltage Operation (2.25 V to 5.5 V) Low On-Resistance - rDS(on): 7 W Fast Switching - tON : 9 ns, tOFF: 5 ns Low Charge Injection - QINJ: 5 pC Low Power Consumption TTL/CMOS Compatible 6-Pin SC-70 Package
BENEFITS
D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space
APPLICATIONS
D D D D D Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits
DESCRIPTION
The DG9411 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 9 ns, tOFF: 5 ns), low on-resistance (rDS(on): 7 W) and small physical size (SC70), the DG9411 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG9411 is built on Vishay Siliconix's low voltage JI2 process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG9411.
Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE Logic
SC-70
IN V+ GND 1 2 3 Top View 6 5 4 NO (Source1) COM NC (Source2) 0 1
NC
ON OFF Logic "0" v0.8 V Logic "1"w 2.4 V
NO
OFF ON
ORDERING INFORMATION Temp Range
-40 to 85C
Package
SC70-6
Part Number
DG9411DL
Document Number: 71347 S-02566--Rev. A, 10-Nov-00
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1
DG9411
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125C Power Dissipation (Packages)b 6-Pin SO70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 25_C
New Product
SPECIFICATIONS (V+ = 2.5 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd VNO, VNC, VCOM rDS(on) rDS(on) Flatness IS(off) Switch Off Leakage Currentf ID(off) Channel-On Leakage Current f ID(on) V+ = 2.25 V, VD = 1.0 V, IS = 10 mA V+ = 2.5 V Full Room Fulld Room Room Fulld Room Fulld Room Fulld -250 -3.0 -250 -3.0 -250 -3.0 0 26 29 10 250 3.0 250 3.0 250 3.0 pA nA pA nA pA nA V+ 35 40 W V
Limits
-40 to 85_C
Symbol
V+ = 2.5 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
V+ = 2.75 V VS = 0.5 V/1.5 V, VD = 1.5 V/0.5 V
V+ = 2.75 V, VS = VD = 0.5 V/1.5 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitanced Input Current
VINH
Full Full Full VIN = 0 or V+ Full
2 0.4 3 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd Source-Off Capacitanced Channel-On Capacitanced Drain-to-Source Capacitanced tON tOFF td QINJ OIRR XTALK CS(off) CD(on) CDS(off) VIN = 0 or V+, f = 1 MHz CL = 1 nF, VS = 0 V VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF, f = 1 MHz W, VD or VS = 1.5 V, RL = 300 W, CL = 35 pF W Figures 1 and 2 Room Fulld Room Fulld Room Room Room Room Room Room Room 1 16 7 12 5 -73 -70 7 20 20 pF dB 10 pC 40 45 23 28 ns
Power Supply
Power Supply Range Power Supply Currentd Power Consumption V+ I+ PC VIN = 0 or V+ 2.25 0.01 2.75 1.0 0.3 V mA mW
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Document Number: 71347 S-02566--Rev. A, 10-Nov-00
DG9411
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistanced rDS(on) Flatnessd VNO, VNC, VCOM rDS(on) rDS(on) Flatness IS(off) Switch Off Leakage Current f ID(off) Channel-On Leakage Current f ID(on) V+ = 3.3 V, VS = VD = 1 V/3 V V+ = 3.3 V, VS = 1 V/3 V, VD = 3 V/1 V V+ = 2.7 V, VD = 1.5 V, IS = 10 mA VS = 0 to V+, IS = 10 mA Full Room Full Room Room Full Room Full Room Full -500 -4.0 -500 -4.0 -500 -4.0 0 15 19 7.5 500 4.0 500 4.0 500 4.0 pA nA pA nA pA nA V+ 25 30 W V
Vishay Siliconix
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
Digital Control
Input High Voltage Input Low Voltage Input Capacitanced Input Current
VINH
Full Full Full VIN = 0 or V+ Full
2 0.8 3 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injectiond Off-Isolationd Crosstalkd Source-Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CS(off) CD(on) CDS(off) VIN = 0 or V+, f = 1 MHz CL = 1 nF, VGEN = 0 V, VS = 0 V RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF, f = 1 MHz W, VD or VS = 2.0 V, RL = 300 W, CL = 35 pF W Figure 1 and 2 Room Full Room Full Room Room Room Room Room Room Room 1 12 6 7 5 -73 -70 7 20 20 pF dB 10 pC 15 20 8 10 ns
Drain-to-Source Capacitanced
Power Supply
Power Supply Range Power Supply Current Power Consumption V+ I+ PC VIN = 0 or V+ 2.7 0.01 3.3 1.0 0.4 V mA mW
Document Number: 71347 S-02566--Rev. A, 10-Nov-00
www.vishay.com
3
DG9411
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Flatnessd VNO, VNC, VCOM rDS(on) rDS(on) Flatness IS(off) Switch Off Leakage Current ID(off) Channel-On Leakage Current ID(on) V+ = 4.5 V, VD = 3 V, IS = 10 mA V+ = 2.5 V Full Room Full Room Room Full Room Full Room Full -1.0 -4.0 -1.0 -4.0 -1.0 -3.0 0 7 10 2 1.0 4.0 1.0 4.0 1.0 4.5 nA V+ 12 16 W V
New Product
Limits
-40 to 85_C
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa
Minb
Typc
Maxb
Unit
V+ = 5.5 V VS = 1 V/4.5 V, VD = 4.5 V/1 V
V+ = 5.5 V, VS = VD = 1 V/4.5 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
2.4 0.8 3 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injectiond Off-Isolationd Crosstalkd Source-Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CS(off) CD(on) CDS(off) VIN = 0 or V+, f = 1 MHz CL = 1 nF, VS = 0 V VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF, f = 1 MHz W, VD or VS = 3 V, RL = 300 W, CL = 35 pF W Figure 1 and 2 Room Full Room Full Room Room Room Room Room Room Room 1 9 5 4 5 -73 -70 7 20 20 pF dB 10 pC 11 15 7 9 ns
Drain-to-Source Capacitanced
Power Supply
Power Supply Range Power Supply Current Power Consumption Notes: a. b. c. d. e. f. Room = 25C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. V+ I+ PC VIN = 0 or V+ 4.5 0.01 5.5 1.0 0.6 V mA mW
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Document Number: 71347 S-02566--Rev. A, 10-Nov-00
DG9411
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. Analog and Power Voltage
30 rDS(on) - Drain-Source On-Resistance ( ) rDS(on) - Drain-Source On-Resistance ( ) 30 V+ = 2.5 V 25
Vishay Siliconix
rDS(on) vs. Analog Voltage and Temperature
25 V+ = 2.5 V 20
20 85_C V+ = 5 V 10 25_C -40_C 85_C
15
V+ = 3 V
15
10 V+ = 5 V 5
5
-40_C 25_C
0 0 1 2 3 4 5 VD - Analog Voltage (V)
0 0 1 2 3 4 5 VD - Analog Voltage (V)
Supply Current vs. Temperature
100 V+ = 5 V VIN = 0 V I+ - Supply Current (nA) I+ - Supply Current (nA) 10 10 mA 1 mA 100 mA 10 mA 1 mA 100 pA 10 pA 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 1 pA
Supply Current vs. Input Switching Frequency
1
0.1
1
10
100
1K
10 K
100 K
1M
10 M
Temperature (_C)
Input SwitchingFrequency (Hz)
Leakage Current vs. Temperature
100 K V+ = 5 V VD, VS = 5 V 100
Leakage vs. Analog Voltage
V+ = 5 V 0
10 K Leakage Current (pA)
ID(off) Leakage Current (pA) -100 ID(off) -200 ID(on) -300 -400 -500 -600 IS(off)
1K ID(on) 100
10
1 -50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
Temperature (_C)
VD, VS - Analog Voltage (V)
Document Number: 71347 S-02566--Rev. A, 10-Nov-00
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5
DG9411
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
25 tON tON, tOFF - Switching Time (nS) 20 25_C 85_C OIRR, XTALK (dB) Off Isolation 80 100
Crosstalk and Off Isolation vs. Frequency
15
tOFF 25_C
-40_C
60
Crosstalk
10
40
85_C 5 -40_C
20
V+ = 3 V RL = 50 W
0 2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0 10 K
100 K
1M Frequency (Hz)
10 M
100 M
V+ - Supply Voltage (V)
Input Switching Threshold vs. Supply Voltage
3.0 0
Insertion Loss vs. Frequency
V+ = 3 V RL = 50 W
2.5
VT - Threshold Voltage (V)
-1 Insertion Loss (dB)
2.0
1.5
1.0
0.5
0.0 0 1
Charge Injection (pC)
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EEEEEEE EEEEEEE EEEEEEE EEEEEEE EEEEEEE EEEEEEE
2 3 4 5 6 7 V+ - Supply Voltage (V) 6 4 V+ = 2.5 V 2 0 -2 V+ = 5 V -4 -6 0 1 2 3
-2
-3
-4
-5
-6 1K 10 K 100 K 1M 10 M 100 M 1G Frequency (Hz)
Charge Injection vs. Analog Voltage
CL = 1 nF
V+ = 3 V
4
5
6
VD - Analog Voltage (V)
Document Number: 71347 S-02566--Rev. A, 10-Nov-00
DG9411
New Product
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND RL 300 W CL 35 pF COM Switch Output VOUT 0.9 x VOUT Switch Output 0V tON tOFF +3V 50% 0V
Vishay Siliconix
tr t 20 ns tf t 20 ns
CL (includes fixture and stray capacitance) V OUT + V COM RL R L ) R ON
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
FIGURE 1. Switching Time
V+ Logic Input COM VO RL 300 W CL 35 pF 3V 0V tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN GND
VNC = VNO VO Switch Output 0V
90%
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen + Vgen 3V
V+ NC or NO IN GND COM VOUT VOUT CL = 1 nF IN On
DVOUT
Off Q = DVOUT x CL
On
IN depends on switch configuration: input polarity determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 71347 S-02566--Rev. A, 10-Nov-00
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DG9411
Vishay Siliconix
TEST CIRCUITS
New Product
V+ 10 nF
V+ COM IN COM NC or NO Off Isolation + 20 log GND V NC NO V COM 0V, 2.4 V
RL
Analyzer
FIGURE 4. Off-Isolation
V+ 10 nF
V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
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Document Number: 71347 S-02566--Rev. A, 10-Nov-00

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