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| Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK436 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -800A 800 4 125 3 MAX. -800B 800 3.5 125 4 UNIT V A W PINNING - SOT429 (TO247) PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION SYMBOL d g 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 -800A 4.0 2.5 16 125 150 150 MAX. 800 800 30 -800B 3.5 2.2 14 UNIT V V V A A A W C C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 45 MAX. 1.0 UNIT K/W K/W February 1998 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 800 V; VGS = 0 V; Tj = 25 C VDS = 800 V; VGS = 0 V; Tj =125 C VGS = 30 V; VDS = 0 V VGS = 10 V; BUK436-800A BUK436-800B ID = 1.5 A MIN. 800 2.1 TYP. 3.0 2 0.1 10 2.7 3.5 MAX. 4.0 20 1.0 100 3.0 4.0 UNIT V V A mA nA DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 1.5 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 2.3 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 3.0 TYP. 4.3 1000 80 30 10 25 130 40 5 5 12.5 MAX. 1250 120 50 25 40 150 60 UNIT S pF pF pF ns ns ns ns nH nH nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 4.0 A ; VGS = 0 V IF = 4.0 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 100 V MIN. TYP. 1.0 1800 12 MAX. 4.0 16 1.3 UNIT A A V ns C February 1998 2 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 Zth j-mb / (K/W) BUKx56-hv 1 D= 0.5 0.2 0.1 0.05 0.02 0 P D tp D = tp T T t 1E+01 0.1 0.01 0 20 40 60 80 100 Tmb / C 120 140 0.001 1E-05 1E-03 t/s 1E-01 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A VGS / V = 6 BUK4y6-800A 10 6 5 4.8 4 4.6 4.4 2 4.2 4 0 4 8 12 16 VDS / V 20 24 28 120 110 100 90 80 70 60 50 40 30 20 10 0 8 0 0 20 40 60 80 Tmb / C 100 120 140 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V ID / A BUK456-800A,B Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS RDS(ON) / Ohm BUK4y6-800A 100 10 10 S RD (O N) = S VD /ID A B tp = 10 us 100 us 8 4 4.2 4.4 4.6 VGS / V = 4.8 5 6 4 1 DC 10 ms 100 ms 0.1 10 100 VDS / V 1000 1 ms 10 2 0 0 2 ID / A 4 6 Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS February 1998 3 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B 8 ID / A BUK4y6-800A 4 VGS(TO) / V max. Tj / C = 6 25 3 typ. 4 150 2 min. 2 1 0 0 2 4 VGS / V 6 8 10 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj gfs / S BUK4y6-800A Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS ID / A SUB-THRESHOLD CONDUCTION 7 6 5 4 3 2 1E-01 1E-02 1E-03 2% typ 98 % 1E-04 1E-05 1 0 1E-06 0 2 4 ID / A 6 8 0 1 2 VGS / V 3 4 Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V a Normalised RDS(ON) = f(Tj) Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS C / pF BUK4y6-800 10000 2 1000 Ciss 1 100 Coss Crss 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 10 0 20 VDS / V 40 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 1.5 A; VGS = 10 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz February 1998 4 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B 12 10 8 6 4 2 0 VGS / V BUK4y6-800 VDS / V =160 10 IF / A BUK4y6-800A 640 Tj / C = 150 5 25 0 20 QG / nC 40 0 0 1 VSDS / V 2 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 4 A; parameter VDS Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj February 1998 5 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B MECHANICAL DATA Dimensions in mm Net Mass: 5 g 5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max 2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M 15.5 min Fig.15. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelopes. 3. Epoxy meets UL94 V0 at 1/8". February 1998 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1998 7 Rev 1.000 |
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