 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2N3637CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 0.10 (0.02 0.004) PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 0.31 rad. (0.012) 2.54 0.13 (0.10 0.005) 3 2 1 0.76 0.15 (0.03 0.006) FEATURES * High Voltage Switching * Low Power Amplifier Applications A 1.40 (0.055) max. 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 0.31 rad. (0.012) * Hermetic Ceramic Surface Mount Package A = 1.02 0.10 (0.04 0.004) LCC1 Underside View PAD 1 - Base PAD 2 - Emitter PAD 3 - Collector APPLICATIONS: * CECC Screening Options * Space Quality Levels Options. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCEO VCBO VEBO IC PD TJ , TSTG Collector - Emitter Voltage Collector - Base Voltage Emmiter - Base Voltage Collector Current Total Device Dissipation @ TA = 25C Operating and Storage Junction Temperature Range 175V 175V 5V 1A 500mW -65 to +200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 2/00 2N3637CSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions OFF CHARACTERISTICS BVCEO BVCBO BVEBO IEBO ICBO Collector-Emitter Breakdown Voltage1 IC = 10mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current IC = 100mA IC = 0 VBE = 3.0V VCB = 100V IC = 0.1mA IC = 1mA hFE DC Current Gain IC = 10mA IC = 50mA IC = 150mA VCE(sat) VBE(sat) Collector - Emitter Saturation Voltage1 Base - Emitter Saturation Voltage IC = 10mA IC = 50mA IC = 10mA IC = 50mA VCE = 20V VCB = 20V VBE = 1.0V IB = 0 IE = 0 IE = 10mA0 IC = 0 IE = 0 VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V IB = 1mA IB = 5mA IB = 1mA IB = 5mA IC = 50mA f = 100MHz IE = 0 f = 100kHz IC = 0 f = 100kHz Min. 175 175 5.0 Typ. Max. Unit V 50 100 nA ON CHARACTERISTICS 80 90 100 100 50 0.3 0.5 0.8 .65 0.9 V V 300 - SMALL SIGNAL CHARACTERISTICS ft Cob Cib hie hre hfe hoe NF Current Gain Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Siganl Current Gain Ourput Admittance VCE = 10V RS = 1.0W IC = 0.5mA f = 1kHz VBE = 4.0V IB1 = IB2 =5mA VCE = 10V IC = 10mA f = 1kHz 80 200 10 75 200 1200 3.0 320 200 3.0 MHz pF pF W x10-4 -- mmhos dB SWITCHING CHARACTERISTICS ton toff Turn-On Time Turn-Off Time VCC = 100V IC = 50mA 400 600 ns 1) Pulse test : Pulse Width < 300ms ,Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 2/00 |
Price & Availability of 2N3637CSM
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |