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| IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III I II II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I III I I III I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII * High DC Current Gain -- hFE = 2000 (Typ) @ IC = 2.0 Adc * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication * Choice of Packages -- MJE700 and MJE800 series T0220AB, MJE700T and MJE800T . . . designed for general-purpose amplifier and low-speed switching applications. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Transistors Complementary Silicon Power Plastic Darlington SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 3 PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Case CASE 77 TO-220 Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating 10 20 40 50 30 0 25 50 TO-126 Figure 1. Power Derating TC, CASE TEMPERATURE (C) TO-220AB 75 Symbol TJ, Tstg VCEO VCB VEB PD IC IB Symbol RJC 100 MJE700,T MJE800,T CASE 77 40 0.32 60 60 - 55 to + 150 125 0.1 4.0 5.0 3.13 2.50 Max MJE702 MJE703 MJE802 MJE803 TO-220 50 0.40 80 80 150 Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT MJE800,T MJE700,T MJE803 MJE802 MJE703 MJE702 CASE 77-08 TO-225AA TYPE MJE700 - 703 MJE800 - 803 CASE 221A-06 TO-220AB MJE700T MJE800T Order this document by MJE700/D NPN PNP 1 t, TIME ( s) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min 60 80 -- -- -- -- -- Max -- -- Unit Vdc Collector-Emitter Breakdown Voltage (1) (IC = 50 mAdc, IB = 0) MJE700,T, MJE800,T MJE702, MJE703, MJE802, MJE803 V(BR)CEO ICEO Collector Cutoff Current (VCE = 60 Vdc, IB = 0) MJE700,T, MJE800,T (VCE = 80 Vdc, IB = 0) MJE702, MJE703, MJE802, MJE803 Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) Collector Cutoff Current (VCB = Rated BVCEO, IE = 0, TC = 100_C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) DC Current Gain (1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) Adc 100 100 100 500 2.0 ICBO IEBO hFE Adc mAdc -- ON CHARACTERISTICS MJE700,T, MJE702, MJE800,T, MJE802 MJE703, MJE803 All devices 750 750 100 -- -- -- -- -- -- -- -- -- Collector-Emitter Saturation Voltage (1) (IC = 1.5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) Base-Emitter On Voltage (1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) VCE(sat) Vdc MJE700,T, MJE702, MJE800,T, MJE802 MJE703, MJE803 All devices 2.5 2.8 3.0 2.5 2.5 3.0 -- VBE(on) Vdc MJE700,T, MJE702, MJE800,T, MJE802 MJE703, MJE803 All devices DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. hfe 1.0 -- 4.0 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA V2 APPROX + 8.0 V 0 V1 APPROX -12 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB VCC - 30 V ts VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C RC TUT 2.0 SCOPE tf 1.0 0.8 0.6 0.4 PNP NPN 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 tr D1 6.0 k 150 + 4.0 V 25 s For td and tr, D1 id disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses. td @ VBE(off) = 0 0.2 0.04 0.06 Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.05 0.01 SINGLE PULSE 0.1 0.2 0.5 1.0 D = 0.5 0.2 0.1 0.05 0.02 Figure 3. Switching Times ZJC(t) = r(t) RJC RJC = 2.50C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k t1 Figure 4. Thermal Response (MJE700T, 800T Series) 2 Motorola Bipolar Power Transistor Device Data MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE JC(t) = r(t) JC JC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk) t2 DUTY CYCLE, D = t1/t2 t1 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 5. Thermal Response (MJE700, 800 Series) ACTIVE-REGION SAFE-OPERATING AREA 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 5.0 ms 1.0 ms 100 s 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 5.0 5.0 ms 1.0 ms 100 s IC, COLLECTOR CURRENT (AMP) dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED MJE702, 703 MJE700 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 IC, COLLECTOR CURRENT (AMP) dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED MJE802, 803 MJE800 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 6. MJE700 Series There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 7. MJE800 Series The data of Figures 6 and 7 are based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4 or 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 5.0 100 s 1.0 ms 5.0 ms 2.0 1.0 0.5 dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 5.0 100 s 1.0 ms 5.0 ms 2.0 1.0 0.5 dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.2 0.1 5.0 0.2 0.1 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 8. MJE700T Figure 9. MJE800T Motorola Bipolar Power Transistor Device Data 3 MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803 PNP MJE700, T Series 6.0 k 4.0 k hFE, DC CURRENT GAIN 3.0 k 2.0 k - 55C 1.0 k 800 600 400 300 0.04 0.06 TJ = 125C 25C VCE = 3.0 V 4.0 k hFE, DC CURRENT GAIN 3.0 k 2.0 k 6.0 k TJ = 125C NPN MJE800, T Series VCE = 3.0 V 25C - 55C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.4 0.6 1.0 0.2 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 0.1 0.4 0.6 1.0 0.2 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 10. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC = 0.5 A 1.0 A 2.0 A 4.0 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.4 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.1 IC = 0.5 A 1.0 A 2.0 A 4.0 A TJ = 25C 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 11. Collector Saturation Region 2.2 TJ = 25C 1.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) 2.2 TJ = 25C 1.8 VBE(sat) @ IC/IB = 250 1.4 VBE @ VCE = 3.0 V 1.4 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 12. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 5 MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803 PACKAGE DIMENSIONS -- CONTINUED -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJE700/D* MJE700/D |
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