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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N35CL/D Advanced Information SMARTDISCRETESTM Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate-Emitter ESD protection, Gate-Collector overvoltage protection from SMARTDISCRETESTM monolithic circuitry for usage as an Ignition Coil Driver. * Temperature Compensated Gate-Collector Clamp Limits Stress Applied to Load * Integrated ESD Diode Protection * Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors * Low Saturation Voltage * High Pulsed Current Capability MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE(on) = 1.8 VOLTS 350 VOLTS (CLAMPED) C G G Rge C E E CASE 221A-09 STYLE 9 TO-220AB MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current -- Continuous @ TC = 25C Reversed Collector Current - pulse width Symbol VCES VCGR VGE Value CLAMPED CLAMPED CLAMPED 20 12 150 3.5 - 55 to 175 Unit Vdc Vdc Vdc Adc Apk Watts kV C t 100 ms IC ICR PD ESD TJ, Tstg Total Power Dissipation @ TC = 25C (TO-220) Electrostatic Voltage -- Gate-Emitter Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case - (TO-220) Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw RqJC RqJA TL 1.0 62.5 260 10 lbfin (1.13 Nm) C/W C UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS Single Pulse Collector-Emitter Avalanche Energy @ Starting TJ = 25C @ Starting TJ = 150C SMARTDISCRETES is a trademark of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. EAS 550 150 mJ REV 1 (c) Motorola TMOS Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MGP20N35CL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (IClamp = 10 mA, TJ = -40 to 150C) Zero Gate Voltage Collector Current (VCE = 250 V, VGE = 0 V, TJ = 125C) (VCE = 15 V, VGE = 0 V, TJ = 125C) Resistance Gate-Emitter (TJ = -40 to 150C) Gate-Emitter Breakdown Voltage (IG = 2 mA) Collector-Emitter Reverse Leakage (VCE = -15 V, TJ = -40 to 150C) Collector-Emitter Reversed Breakdown Voltage (IE = 75 mA) ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE, IC = 1 mA) (VCE = VGE, IC = 1 mA, TJ = 150C) Collector-Emitter On-Voltage (VGE = 5 V, IC = 5 A) (VGE = 5 V, IC = 10 A) (VGE = 5 V, IC = 10 Adc, TJ = 150C) Forward Transconductance (VCE DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time ( (VCC = 320 V, IC = 20 A, , , L = 200 mH, RG = 1 KW) ( (VCC = 14 V, IC = 20 A, , , L = 200 mH, RG = 1 KW) (VCC = 280 V, IC = 20 A, V A VGE = 5 V) Qg Qge Qgc td(off) tf td(on) tr -- -- -- -- -- -- -- 45 8.0 20 TBD TBD TBD TBD 80 -- -- TBD TBD TBD TBD s s nC (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres -- -- -- 2800 200 25 -- -- -- pF VGE(th) 1.0 0.75 VCE(on) -- -- -- gfe 10 1.1 1.4 1.4 16 1.4 1.9 1.8 -- S 1.7 -- 2.4 1.8 V V V(BR)CES 320 ICES -- -- RGE V(BR)GES IECS V(BR)ECS 10k 11 -- 26 -- -- 16k 13 8 40 1.0 200 30k 15 100 120 mA 350 380 Vdc Symbol Min Typ Max Unit "V mA V mA W u 50 V, IC = 10 A) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N35CL TYPICAL ELECTRICAL CHARACTERISTICS 40 VGE = 10 V I C , COLLECTOR CURRENT (AMPS) 30 4V 20 40 TJ = 25C I C , COLLECTOR CURRENT (AMPS) 30 4V 20 VGE = 10 V 5V TJ = 125C 5V 10 3V 0 0 2 4 6 8 10 10 3V 0 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics Figure 2. Output Characteristics VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 40 I C , COLLECTOR CURRENT (AMPS) VCE = 10 V 30 2.2 VGE = 5 V 2.0 1.8 15 A 1.6 1.4 1.2 1.0 -50 10 A IC = 20 A 20 TJ = 125C 10 25C 0 1 2 3 4 5 0 50 100 150 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-to-Emitter Saturation Voltage versus Junction Temperature 10000 VGE = 0 V 1000 Cies TJ = 25C C, CAPACITANCE (pF) 100 Coes 10 Cres 1.0 0 25 50 75 100 125 150 175 200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5. Capacitance Variation Motorola TMOS Power MOSFET Transistor Device Data 3 MGP20N35CL VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 8 20 Qg IL, LATCH CURRENT (AMPS) 16 3 mH 6 Qge 4 Qgc 12 10 mH 8 2 TJ = 25C IC = 20 A 4 0 0 10 20 30 40 0 0 25 50 75 100 125 Qg, TOTAL GATE CHARGE (nC) TEMPERATURE (C) Figure 6. Gate-to-Emitter Voltage versus Total Charge Figure 7. Latch Current versus Temperature 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E - 05 1.0E - 04 1.0E - 03 1.0E - 02 t, TIME (s) t2 DUTY CYCLE, D = t1/t2 1.0E - 01 t1 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0E+00 1.0E+01 Figure 8. Thermal Response 4 Motorola TMOS Power MOSFET Transistor Device Data MGP20N35CL PACKAGE DIMENSIONS -T- C T 4 SEATING PLANE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR CASE 221A-09 ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 Motorola TMOS Power MOSFET Transistor Device Data MGP20N35CL/D 5 |
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