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| 2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES: * GPE = 6.0 dB Typ. at 1.0 GHz * FT = 1,500 MHz Typ. at 15 V/ 50 mA * Hermetic TO-39 Package MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG JC 400 mA 55 V 30 V 3.5 W @ TC = 25 C -65 to +200 C -65 to +200 C 50 C/W O O O O 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS SYMBOL BVCER BVEBO ICES ICEO ft COB GPE C IE = 100 A VCE = 50 V VCE = 15 V VCE = 15 V VCE = 15 V VCB = 30 V VCC = 28 V IC = 5.0 mA TA = 25 C O NONE TEST CONDITIONS RBE = 10 MINIMUM 55 3.0 TYPICAL MAXIMUM UNITS V V 1.0 TC = +150 C O A mA A MHz 10.0 20 IC = 50 mA f = 200 MHz f = 1.0 MHz 1200 3.0 5.0 35 pF dB % POUT = 1.0 W f = 200 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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