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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1774 SWITCHING DUAL P-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA1774 is Dual P-channel MOS Field Effect Transistor. 8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 0.3 4.4 +0.10 -0.05 FEATURES * Dual chip type * Low on-state resistance RDS(on)1 = 250 m MAX. (VGS = -10 V, ID = -2.0 A) RDS(on)2 = 300 m MAX. (VGS = -4.5 V, ID = -2.0 A) RDS(on)3 = 330 m MAX. (VGS = -4.0 V, ID = -2.0 A) * Low input capacitance Ciss = 420 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8) 1 4 5.37 MAX. 1.44 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.12 M PA1774G ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg -60 m20 m2.8 m18 0.6 0.8 150 -55 to 150 -2.8 0.78 V V A A W W C C A mJ EQUIVALENT CIRCUIT (1/2 circuit) Drain Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Gate Body Diode Note3 Note3 IAS EAS Gate Protection Diode Source Notes 1. PW 10 s, Duty Cycle 1% 2 2 2. Mounted on Glass Epoxy Board of 1600 mm x 1.6 mm. Drain pad size: 264 mm x 35 m, TA = 25C 3. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -200 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15380EJ2V0DS00 (2nd edition) Date Published June 2002 NS CP(K) Printed in Japan (c) 2001 PA1774 ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -48 V VGS = -10 V ID = -2.8 A IF = 2.8 A, VGS = 0 V IF = 2.8 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = m16 V, VDS = 0 V VDS = -10 V, ID = 1 mA VDS = -10 V, ID = -2.0 A VGS = -10 V, ID = -2.0 A VGS = -4.5 V, ID = -2.0 A VGS = -4.0 V, ID = -2.0 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -30 V, ID = -2.0 A VGS = -10 V RG = 0 -1.5 2.5 -2.0 4.3 200 230 240 420 80 30 8 5 35 8 10 1.7 2.2 0.89 45 65 250 300 330 MIN. TYP. MAX. -10 UNIT A A V S m m m pF pF pF ns ns ns ns nC nC nC V ns m10 -2.5 C TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG VGS = -20 0 V - ID VDD BVDSS VDS 50 L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD VDS (-) 90% 90% 10% 10% VGS (-) VGS Wave Form 0 10% VGS 90% IAS VGS (-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA 50 RL VDD PG. 2 Data Sheet G15380EJ2V0DS PA1774 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 1 .0 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 0 .8 2 u n it 80 0 .6 1 u n it 0 .4 60 40 20 0 .2 0 0 20 40 60 80 100 120 140 160 0 .0 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C -100 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA T A = 2 5 C S ig le P u ls e ID (D C ) = - 2 .8 A PW = 1 ms ID (p u ls e ) = - 1 8 A -10 ID - Drain Current - A -1 R D S (on ) L im ite d (V G S = - 1 0 V ) P W = 10 m s 100 m s P o w e r D iss ip a tio n L im ite d -0.1 -0.01 -0.001 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-A) = 208.3C/W 100 10 1 0 .1 0 .0 1 Mounted on Glass Epoxy Board of 1600 mm2x1.6 mm Drain Pad size:264 mm2x35 m 0 .0 0 1 Single Pulse,1unit 0 .0 0 0 1 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15380EJ2V0DS 3 PA1774 -20 -18 -16 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed FORWARD TRANSFER CHARACTERISTICS -100 -10 V DS = - 1 0 V P u ls e d ID - Drain Current - A ID - Drain Current - A -14 -12 -10 -8 -6 -4 -2 0 0 VGS = -10 V -4.5 V -4 V -1 -0.1 -0.01 -0.001 -0.0001 T A = 1 5 0 C 1 2 5 C 7 5 C 2 5 C -2 5 C -1 -2 -3 -4 -5 0 -1 -2 -3 -4 -5 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S V SD = - 1 0 V ID = - 1 m A VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 0 0 .0 0 T A = -2 5 C 2 5 C 7 5 C 1 2 5C 1 5 0C P u ls e d V DS = - 1 0 V -4.0 -3.5 VGS(off) - Gate Cut-off Voltage - V -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 1 0 .0 0 1 .0 0 0 .1 0 -5 0 -2 5 0 25 50 75 100 125 150 175 0 .0 1 -0.01 -0.1 -1 -10 -100 Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m 800 P u ls e d ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 400 P u ls e d ID = -2 .8 A 700 600 500 400 300 200 100 0 -0.1 -1 -10 -100 V G S = - 4 .0 V - 4 .5 V -10 V 300 200 100 0 -5 -10 -15 -20 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 Data Sheet G15380EJ2V0DS PA1774 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m 500 P ulsed V G S = -4V - 4.5 V -10 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 C iss 400 Ciss, Coss, Crss - Capacitance - pF 100 C oss 300 C r ss 200 10 100 -50 -25 0 25 50 75 100 125 150 175 VGS = 0 V f= 1 M H z 1 -0.1 -1 -10 -100 Tch - Channel Temperature - C SWITCHING CHARACTERISTICS 1000 V DD = - 30 V V GS = -10 V R G = 10 VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -60 -50 -40 -30 -20 -10 VDS VDD = -48 V -30 V -12 V ID = -2.8 A -12 -10 -8 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 100 t d (o f f) tf VGS -6 -4 -2 0 10 td ( o n ) tr 1 -0.1 -1 -10 -100 0 0 2 4 6 8 10 ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE P u ls e d VGS = 0 V QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 d i/ d t = 1 0 0 A / n s VGS = 0 V -100 trr - Reverse Recovery Time - ns ISD - Diode Forward Current - A -10 100 -1 -0.1 10 -0.01 0 -0.5 -1.0 -1.5 1 -0.1 -1 -10 -100 VSD - Source to Drain Voltage - V IF - Drain Current - A Data Sheet G15380EJ2V0DS VGS - Gate to Drain Voltage - V 5 PA1774 -10 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD VDD = -30 V, RG = 25 VGS = -20 0 V Starting Tch = 25C SINGLE AVALANCHE ENERGY DERATING FACTOR 100 V DD = - 30 V VGS =-20 0 V RG = 25 IA S - 2 .8 A IAS - Single Avalanche Current - A IAS = -2.8 A EAS = 0.78 mJ Energy Derating Factor - % 80 60 -1 40 20 -0.1 0.01 0.1 1 10 0 25 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - C 6 Data Sheet G15380EJ2V0DS PA1774 [MEMO] Data Sheet G15380EJ2V0DS 7 |
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