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| Semiconductor STK1828M N-Channel Enhancement-Mode MOSFET Description * High speed switching application. * Analog switch application. Features * 2.5V Gate drive. * Low threshold voltage : Vth = 0.5~1.5V. * High speed. Ordering Information Type NO. STK1828M Marking 1828 Package Code TO-92M Outline Dimensions 4.00.1 unit : mm 0.44 REF 0.52 REF 1.27 Typ. 2.54 0.1. 14.00.40 3.00.1 PIN Connections 1. Source 2. Drain 3. Gate 3.00.1 3.8 Min. 0.42 Typ. 0.7 Typ. KST-I008-000 1 STK1828M Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range (Ta=25C) Symbol VDS VGSS ID PD Tch Tstg Ratings 20 10 50 400 150 -55~150 Unit V V mA mW C C Electrical Characteristics Characteristic Drain-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Ta=25C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfs Ciss Coss Crss tON tOFF Test Condition ID=100A, VGS=0 ID=0.1mA, VDS=3V VDS=20V, VGS=0 VGS=10V, VDS=0 VGS=2.5V, ID=10mA VDS=3V, ID=10mA VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V Min. Typ. Max. 20 0.5 1.5 1 1 10 20 5.5 6.5 1.6 0.14 0.14 20 Unit V V A A mS pF pF pF KST-I008-000 2 STK1828M Electrical Characteristic Curves Fig.1 ID - VDS Fig.2 PD - Ta Fig.3 IDR - VDS Fig.4 ID - VGS 155 - Fig.5 Yfs- ID Fig.6 C - VDS KST-I008-000 3 Electrical Characteristic Curves Fig.7 VDS - ID Fig.8 t - ID STK1828M KST-I008-000 4 |
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