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SSM6K08FU
Preliminary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
SSM6K08FU
High Speed Switching Applications
* * * Small package Low on resistance: Ron = 105 m (max) (@VGS = 4 V) Ron = 140 m (max) (@VGS = 2.5 V)
High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.)
Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 12 1.6 3.2 300 150 -55~150 mW C C Unit V V A
Note1: Mounted on FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.32 mm x 6)
Figure 1.
Marking
6 5 4
Equivalent Circuit (top view)
6 5 4
KDC
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
961001EAA1
* TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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SSM6K08FU
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth Yfs Test Condition VGS = 12 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.8 A ID = 0.8 A, VGS = 4 V Drain-Source ON resistance RDS (ON) ID = 0.8 A, VGS = 2.5 V ID = 0.8 A, VGS = 2.0 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note2) (Note2) (Note2) (Note2) Min 20 12 0.5 2.0 Typ. 77 100 125 306 44 74 16 15 Max 1 1 1.2 105 140 210 pF pF pF ns m Unit A V A V S
VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.8 A, VGS = 0~2.5 V, RG = 4.7
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit (b) VIN
2.5 V 2.5 V OUT IN 0V RG 10 s VDD = 10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C 10% 90%
0
VDD
(c) VOUT
VDD 10% VDS (ON) 90% tr ton tf toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product.
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ID - VDS
4 Common Source 4 V 2.5 V 2.0 V Ta = 25C 1000 10000 VDS = 3 V Common Source
ID - VGS
Ta = 100C
(mA)
(A)
3
100 25C 10 -25C
Drain current ID
1.7 V 2 1.6 V 1 1.5 V 1.4 V VGS = 1.3 V 0 0 0.5 1 1.5 2
Drain current ID
1
0.1
0.01 0
0.4
0.8
1.2
1.6
2
Drain-Source voltage VDS
(V)
Gate-Source voltage VGS
(V)
RDS (ON) - ID
200 Common Source Ta = 25C 400 ID = 0.8 A VGS = 2.0 V Common Source
RDS (ON) - Ta
Drain-Source on resistance RDS (ON) (m)
Drain-Source on resistance RDS (ON) (m)
160
300
120
2.5 V 4.0 V
200
VGS = 2.0 V 2.5 V 4V
80
100
40
0 0
1
2
3
0 -25
0
25
50
75
100
125
150
Drain current ID
(A)
Ambient temperature Ta (C)
RDS (ON) - VGS
400 ID = 0.8 A Common Source 4 Common Source VGS = 0 Ta = 25C
IDR - VDS
D IDR S
Drain-Source on resistance RDS (ON) (m)
(A)
300
3
200 25C Ta = 100C 100 -25C
Drain current IDR
G
2
1
0 0
2
4
6
8
10
12
0 0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Gate-Source voltage VGS
(V)
Drain-Source voltage VDS
(V)
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Vth - Ta
2 VDS = 3 V ID = 0.1 mA Common Source 1.5 10 VDS = 3 V
|Yfs| - ID
Gate threshold voltage Vth (V)
Forward transfer admittance |Yfs| (S)
3 Common Source Ta = 25C 1
0.3 0.1
1
0.03 0.01 1
0.5 3 10 30 100 300 1000 3000 10000
0 -25
Drain current ID
0 25 50 75 100 125 150
(mA)
Ambient temperature Ta (C)
Switching Time
1000 Common Source VDD = 10 V 300 500 VGS = 0~2.5 V Rg = 4.7 Ta = 25C 100 1000
C - VDS
Switching time t (ns)
(pF)
Ciss
Capacitance C
100 50 Coss Crss Common Source 10 VGS = 0 f = 1 MHz Ta = 25C
30 ton 10 tr tf
toff
3
5 0.1
0.5
1
5
10
50
100
1 10
Drain-Source voltage VDS
30 100 30 1000 300 10000
(V)
Drain current ID
(mA)
Dynamic Input Characteristic
10 Common Source VDD = 16 V 350
PD - Ta
Mounted on FR4 board 300 (25.4 mm x 25.4 mm x 1.6 t, 2 Cu pad: 0.32 mm x 6) Figure 1
(V)
Gate-Source voltage VGS
(mW) Power dissipation PD
2 4 6 8
8 ID= 1.6 A Ta = 25C 6
250
200 150 100
4
2
50 0 0 0 0
20
40
60
80
100
120
140
160
Total gate charge Qg (nC)
Ambient temperature Ta (C)
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SSM6K08FU
Safe Operating Area
10 ID max (pulse) * 3 10 ms 1 ID max (continuous) 0.3 DC operation Ta = 25C 0.1 Mounted on FR4 board 0.03 (25.4 mm x 25.4 mm x 1.6 t 2 Cu pad: 0.32 mm x 6) Figure 1 1 ms
(A)
100 ms
Drain current ID
0.01 * Single non-repetitive pulsed Ta = 25C Curves must be derated linearly with increase in temperature. 0.3 1 3 10 30 100
0.003
0.001 0.1
Drain-Source voltage VDS
(V)
0.4 mm 0.8 mm 25.4 mm x 25.4 mm x 1.6 t, 2 Cu Pad: 0.32 mm x 6
Figure 1
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