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| (R) BYV52/PI HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in SOT93, or TOP3I this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. SOT93 (Plastic) BYV52-200 isolated TOP3I (Plastic) BYV52PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS forward current Average forward current SOT93 = 0.5 TOP3I Surge non repetitive forward current Storage and junction temperature range Tc=110C Tc=90C tp=10ms sinusoidal Parameter Per diode Per diode Per diode Per diode Value 50 30 30 500 - 40 to + 150 - 40 to + 150 Unit A A IFSM Tstg Tj A C C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 Ed : 2C 1/6 BYV52/PI THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter SOT93 Per diode Total TOP3I Per diode Total Value 1.2 0.75 1.8 1.2 0.3 0.6 Unit C/W Rth (c) Coupling SOT93 TOP3I C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR * Tj = 25C Tj = 100C VF ** Tj = 125C Tj = 125C Tj = 25C IF = 20 A IF = 40 A IF = 40 A Test Conditions VR = VRRM Min. Typ. Max. 25 2.5 0.85 1.00 1.15 Unit A mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.7 x IF(AV) + 0.0075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr Tj = 25C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A Min. Typ. Max. 35 Unit ns dIF/dt = -50A/s 50 tr = 5 ns 10 ns VFP 2/6 Tj = 25C tr = 5 ns 1.5 V BYV52/PI Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.2 =0.1 =0.05 =0.5 =1 Fig.2 : Peak current versus form factor. 40 35 30 25 20 15 10 5 T IF(av)(A) =tp/T tp 0 0 5 10 15 20 25 30 35 500 450 400 350 300 250 200 150 100 50 0 0 IM(A) T P=20W IM =tp/T tp P=10W P=30W 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) =0.5 =0.2 = 0 .1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj= 125 oC 0.5 T 0.2 Single pulse 0.1 1 10 100 300 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1. 0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. (SOD93) 300 250 200 150 100 IM Fig.6 : Non repetitive surge peak forward current versus overload duration. (TOP3I) 250 200 150 IM(A) IM(A) Tc=25 oC 100 Tc=50 o C t =0.5 IM Tc=25 o C Tc=50 o C t =0.5 50 0 0.001 t(s) 0.01 0.1 Tc=110 oC 50 0 0.001 Tc=90 o C t(s) 0.01 0.1 1 3/6 1 BYV52/PI Fig.7 : Average current temperature. (duty cycle : 0.5) (SOD93) 35 30 25 20 15 10 5 0 0 Tamb( o C) =tp/T tp Rth(j-a)=15 o C/W =0.5 T versus ambient Fig.8 : Average current temperature. (duty cycle : 0.5) (TOP3I) 35 IF(av)(A) versus ambient IF(av)(A) Rth(j-a)=Rth(j-c) 30 25 20 15 10 5 =tp/T tp =0.5 T Rth(j-a)=Rth(j-c) Rth(j-a)=15 o C/W 20 40 60 80 100 120 140 160 0 0 Tamb( o C) 20 40 60 80 100 120 140 160 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). Fig.10 : Recovery charges versus dIF/dt. 20 0 1 90 1 80 1 70 1 60 1 50 1 40 1 30 1 20 C(pF) F=1Mhz Tj=25 oC 11 0 1 00 1 VR(V) 10 1 00 2 00 1 00 90 90%CONFIDENCE 80 IF=IF(av) 70 Tj=100 OC 60 50 40 Tj=25 O C 30 20 10 dIF/dt(A/us) 0 1 10 QRR(nC) 100 Fig.11 : Peak reverse current versus dIF/dt. Fig.12 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125o C] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 IRM(A) 90%CONFIDENCE 1.50 Tj=100 O C IF=IF(av) 1.25 1.00 IRM 0.75 QRR 0.50 Tj=25 O C 0.25 100 0.00 0 25 dIF/dt(A/us) 20 10 Tj( o C) 50 75 100 125 150 4/6 BYV52/PI PACKAGE MECHANICAL DATA SOD93 DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.70 4.90 0.185 0.193 1.17 1.37 0.046 0.054 2.50 0.098 1.27 0.050 0.50 0.78 0.020 0.031 1.10 1.30 0.043 0.051 1.75 0.069 10.80 11.10 0.425 0.437 14.70 15.20 0.578 0.598 12.20 0.480 16.20 0.638 18.0 0.709 3.95 4.15 0.156 0.163 31.00 1.220 4.00 4.10 0.157 0.161 REF. A C D D1 E F F3 G H L L2 L3 L5 L6 O Marking : Type number Cooling method : C Weight : 3.79 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/6 BYV52/PI PACKAGE MECHANICAL DATA TOP3I (isolated) DIMENSIONS REF. A B C D E F G H J K L P R Marking : Type number Cooling method : C Weight : 4.46 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Millimeters Min. Max. 4.4 4.6 1.45 1.55 14.35 15.60 0.5 0.7 2.7 2.9 15.8 16.5 20.4 21.1 15.1 15.5 5.4 5.65 3.4 3.65 4.08 4.17 1.20 1.40 4.60 typ. Inches Min. Max. 0.173 0.181 0.057 0.061 0.565 0.614 0.020 0.028 0.106 0.114 0.622 0.650 0.815 0.831 0.594 0.610 0.213 0.222 0.134 0.144 0.161 0.164 0.047 0.055 0.181 typ. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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