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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702MI CATV amplifier module Product specification Supersedes data of 1997 Mar 25 File under Discrete Semiconductors, SC16 1998 Mar 13 Philips Semiconductors Product specification CATV amplifier module FEATURES * Excellent linearity * Extremely low noise * Silicon nitride passivation * Rugged construction * Gold metallization ensures excellent reliability * Mirrored image pinning of the BGD702. APPLICATIONS * CATV systems operating in the 40 to 750 MHz frequency range. handbook, halfpage BGD702MI PINNING - SOT115J PIN 1 2 3 5 7 8 9 output common common +VB common common input DESCRIPTION DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). 1 2 3 8 579 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 50 MHz f = 750 MHz VB = 24 V 18 18.5 - MIN. 19 - 435 MAX. UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER - -40 -20 MIN. 65 +100 +100 MAX. C C UNIT dBmV 1998 Mar 13 2 Philips Semiconductors Product specification CATV amplifier module CHARACTERISTICS Table 1 Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 750 MHz SL FL S11 f = 40 to 750 MHz f = 40 to 750 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz S21 CTB Xmod CSO d2 Vo F phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure f = 50 MHz 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz note 1 dim = -60 dB; note 2 f = 50 MHz f = 450 MHz f = 550 MHz f = 600 MHz f = 750 MHz Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 2. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo -6 dB; fr = 749.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 738.25 MHz. total current consumption (DC) note 3 MIN. 18 18.5 0.2 - 20 19 18 17 16 20 19 18 17 16 -45 - - - - 61 - - - - - - - 2 BGD702MI SYMBOL Gp MAX. 19 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB dB dB dB dB mA 0.5 - - - - - - - - - - +45 -58 -62 -58 -68 - 5.5 6.5 6.5 7 8.5 435 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1998 Mar 13 3 Philips Semiconductors Product specification CATV amplifier module Table 2 Bandwidth 40 to 600 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 600 MHz SL FL S11 f = 40 to 600 MHz f = 40 to 600 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz S21 CTB phase response composite triple beat f = 50 MHz 85 channels flat; Vo = 44 dBmV; measured at 595.25 MHz 85 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 85 channels flat; Vo = 44 dBmV; measured at 596.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 MIN. 18 18.5 0.2 - 20 19 18 17 20 19 18 17 -45 - - 2 BGD702MI SYMBOL Gp MAX. 19 UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB 0.3 - - - - - - - - +45 -65 Xmod cross modulation - -65 dB CSO composite second order distortion - -60 dB d2 Vo F Itot Notes second order distortion output voltage noise figure total current consumption (DC) - 64 - - -70 - - 435 dB dBmV dB mA 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 541.25 MHz; Vq = 44 dBmV; measured at fp + fq = 596.5 MHz. 2. Measured according to DIN45004B: fp = 590.25 MHz; Vp = Vo; fq = 597.25 MHz; Vq = Vo -6 dB; fr = 599.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 588.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1998 Mar 13 4 Philips Semiconductors Product specification CATV amplifier module Table 3 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 550 MHz SL FL S11 f = 40 to 550 MHz f = 40 to 550 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz S21 CTB phase response composite triple beat f = 50 MHz 77 channels flat; Vo = 44 dBmV; measured at 547.25 MHz 77 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 77 channels flat; Vo = 44 dBmV; measured at 548.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 MIN. 18 18.5 0.2 - 20 19 18 17 20 19 18 17 -45 - - 2 BGD702MI SYMBOL Gp MAX. 19 UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB 0.3 - - - - - - - - +45 -67 Xmod cross modulation - -67 dB CSO composite second order distortion - -62 dB d2 Vo F Itot Notes second order distortion output voltage noise figure total current consumption (DC) - 64.5 - - -72 - - 435 dB dBmV dB mA 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. 2. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo -6 dB; fr = 549.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 538.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1998 Mar 13 5 Philips Semiconductors Product specification CATV amplifier module Table 4 Bandwidth 40 to 450 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75 PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 450 MHz SL FL S11 f = 40 to 450 MHz f = 40 to 450 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 450 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 450 MHz S21 CTB phase response composite triple beat f = 50 MHz 60 channels flat; Vo = 46 dBmV; measured at 445.25 MHz 60 channels flat; Vo = 46 dBmV; measured at 55.25 MHz 60 channels flat; Vo = 46 dBmV; measured at 446.5 MHz note 1 dim = -60 dB; note 2 see Table 1 note 3 MIN. 18 18.5 0.2 - 20 19 18 17 20 19 18 17 -45 - - 2 BGD702MI SYMBOL Gp MAX. 19 UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB 0.3 - - - - - - - - +45 -68 Xmod cross modulation - -65 dB CSO composite second order distortion - -65 dB d2 Vo F Itot Notes second order distortion output voltage noise figure total current consumption (DC) - 67 - - -75 - - 435 dB dBmV dB mA 1. fp = 55.25 MHz; Vp = 46 dBmV; fq = 391.25 MHz; Vq = 46 dBmV; measured at fp + fq = 446.5 MHz. 2. Measured according to DIN45004B: fp = 440.25 MHz; Vp = Vo; fq = 447.25 MHz; Vq = Vo -6 dB; fr = 449.25 MHz; Vr = Vo -6 dB; measured at fp + fq - fr = 438.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1998 Mar 13 6 Philips Semiconductors Product specification CATV amplifier module PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads BGD702MI SOT115J D E Z P A2 1 A L F S W d U2 B Q e e1 q2 q1 yMB yMB b wM 2 3 5 7 8 9 c P U1 q 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. 9.1 b c d D E max. max. max. e e1 F L Q P min. max. 8.8 4.15 3.85 2.4 q q1 q2 S U1 U2 max. 8 W w y 0.1 Z max. 3.8 mm 20.8 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 38.1 25.4 10.2 4.2 44.75 6-32 0.25 UNC OUTLINE VERSION SOT115J REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-10 1998 Mar 13 7 Philips Semiconductors Product specification CATV amplifier module DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BGD702MI This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Mar 13 8 Philips Semiconductors Product specification CATV amplifier module NOTES BGD702MI 1998 Mar 13 9 Philips Semiconductors Product specification CATV amplifier module NOTES BGD702MI 1998 Mar 13 10 Philips Semiconductors Product specification CATV amplifier module NOTES BGD702MI 1998 Mar 13 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 Internet: http://www.semiconductors.philips.com SCA57 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125106/00/03/pp12 Date of release: 1998 Mar 13 Document order number: 9397 750 03445 |
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