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| DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor. In addition, this transistor features a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction. PACKAGE DRAWING (UNIT: mm) FEATURES * High hFE and low VCE(sat): hFE 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A) VCE(SAT) 0.3 V TYP. (IC = 2.0 A, IB = 20 mA) * Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT (TC = 25C) PT (TA = 25C) Tj Tstg Ratings 60 60 7.0 3.0 5.0 Note (OHFWURGH &RQQHFWLRQ %DVH Unit V V V A A A W W C C &ROOHFWRU (PLWWHU 0.5 20 2.0 150 -55 to +150 Note PW 300 s, duty cycle 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15606EJ3V0DS00 (3rd edition) Date Published April 2002 N CP(K) Printed in Japan (c) 2002 1998 2SD2164 ELECTRICAL CHARACTERISTICS (TA = 25C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 60 V, IE = 0 A VEB = 7.0 V, IC = 0 A VCE = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 3.0 A Note MIN. TYP. MAX. 10 10 Unit A A 800 500 1,300 1,000 0.3 3,200 Note IC = 2.0 A, IB = 20 mANote IC = 2.0 A, IB = 20 mA Note 0.5 1.2 V V MHz pF VCE = 5.0 V, IC = 0.1 A VCB = 10 V, IE = 0 A, f = 1.0 MHz 110 50 1RWH Pulse test PW 350 s, duty cycle 2% hFE1 CLASSIFICATION Marking hFE1 M 800 to 1,600 L 1,000 to 2,000 K 1,600 to 3,200 2 Data Sheet D15606EJ3V0DS 2SD2164 TYPICAL CHARACTERISTICS (TA = 25C) 7RWDO 3RZHU 'LVVLSDWLRQ 37 : &DVH 7HPSHUDWXUH 7& & ,& 'HUDWLQJ G7 &DVH 7HPSHUDWXUH 7& & 6LQJOH SXOVH &ROOHFWRU &XUUHQW ,& $ &ROOHFWRU WR (PLWWHU 9ROWDJH 9&( 9 7UDQVLHQW 7KHUPDO 5HVLVWDQFH UW &: :LWKRXW KHDWVLQN :LWK LQILQLWH KHDWVLQN 3XOVH :LGWK 3: V Data Sheet D15606EJ3V0DS 3 2SD2164 3XOVH WHVW &ROOHFWRU &XUUHQW ,& $ &ROOHFWRU WR (PLWWHU 9ROWDJH 9&( 9 '& &XUUHQW *DLQ K)( &ROOHFWRU &XUUHQW ,& $ %DVH 6DWXUDWLRQ 9ROWDJH 9%(VDW 9 &ROOHFWRU 6DWXUDWLRQ 9ROWDJH 9&(VDW 9 3XOVH WHVW &ROOHFWRU &XUUHQW ,& $ *DLQ %DQGZLGWK 3URGXFW I7 0+] &ROOHFWRU &XUUHQW ,& $ &ROOHFWRU &DSDFLWDQFH &RE S) &ROOHFWRU WR %DVH 9ROWDJH 9&% 9 4 Data Sheet D15606EJ3V0DS 2SD2164 [MEMO] Data Sheet D15606EJ3V0DS 5 |
Price & Availability of 2SD2164
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