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| High Speed GaAlAs Infrared Emitter C C The OPE5587 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. FEATURES * Ultra high-speed : 25ns rise time * 880nm wavelength * Narrow beam angle * Low forward voltage * High power and high reliability * Available for pulse operating APPLICATIONS * Emitter of IrDA * IR Audio and Telephone * High speed IR communication * IR LANs * Available for wireless digital data transmission OPE5587 DIMENSIONS (Unit : mm) 5.0 1.3 Max 2.0 Min 5.7 8.7 24.0 Min 7.7 2- 0.5 2.5 Anode Cathode Tolerance : 0.2mm STORAGE * Condition : 5C~35C,R.H.60% * Terms : within 3 months from production date * Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGSC C C CCCCCCCCCCCCCCCCC(Ta=25C ) Item Symbol Rating Unit Power Dissipation PDC 150 C Forward current IFC 100 EC IFPC 1.0 AC Pulse forward current CCCCC 1C Reverse voltage VRC 4.0 C Operating temp. Topr. -25~ +85 CC Tsol. 260. CC Soldering temp. CCCCCCCCCCCCCC 2 1 .Duty ratio = 1/100, pulse width=0.1ms. 2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Symbol Forward voltage VFC Reverse current IRC Capacitance Ct Radiant intensity Ie Peak emission wavelength pC Spectral bandwidth 50% C Half angle Optical rise & fall time(10%~90%) Cut off frequency *3 *3 Conditions IF=50 EC VR=4VC f=1 C IF=50 EC IF=50 EC IF=50 C IF=50 C IF=50 C IF D ECEEC DD EC C 13 Min. C C 40 C C C C C Typ. 1.5 C 20 90 880 45 10 25/15 14 (Ta=25C) Max. Unit 2.0 V 10 EC C C / C C C C C deg. C C ns MHz tr/tf fc . 10logPo(fc MHz)/Po(0.1 MHz)=-3 C C CC C High Speed GaAlAs Infrared Emitter FORWARD CURRENT Vs. AMBIENT TEMP. 100 80 60 40 20 0 -20 0 20 40 60 80 Ambient Temperature Ta() 100 200 100 50 30 10 5 3 1 0.5 0.3 0.1 C C C C C OPE5587 RADIANT INTENSITY Vs. FORWARD CURRENT. Ta=25 Ta=25 1 3 5 10 30 50 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. IF=50mA 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 1.0 RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. Ta=25 0.8 0.6 0.4 0.2 0.0 700 Ambient Temperature Ta() FORWARD CURRENT Vs. FORWARD VOLTAGE Ta=25 750 800 850 900 950 Emission Wavelength (nm) 100 50 30 20 10 5 4 3 2 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25 -20 -10 0 10 20 -30 -40 -50 -60 -70 -80 -90 1.0 30 40 50 60 70 80 90 1.0 1 1.0 1.1 1.2 1.3 1.4 Forward Voltage VF(V) 1.5 1.6 0.5 0 0.5 Relative Radiant intensity 14 |
Price & Availability of OPE5587
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