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Schottky Barrier Diodes (SBD) MA2Q705 Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 0.3 0 to 0.05 * New Mini-power type package (2-pin) * Allowing to rectify under (IF(AV) = 1.5 A) condition * Low VF (forward voltage) type: VF < 0.37 V (at IF = 1.0 A) 2.5 0.3 I Features 2 1 0.25 - 0.05 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 30 -40 to +125 -40 to +125 Unit V V A A C C 1.2 0.4 5.0 - 0.1 + 0.4 1.2 0.4 1 : Anode 2 : Cathode New Mini Power Type Package (2-pin) Marking Symbol: PK Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time*1,2 Symbol IR VF Ct trr VR = 30 V IF = 1.0 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 * IR, RL = 100 90 50 Conditions Min Typ Max 3 0.37 Unit mA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 20 MHz 3. *1 : Obtained by fixing the element to the printed-circuit board (glass epoxy) *2 : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 2.15 0.3 + 0.1 1.4 0.2 1 MA2Q705 IF(AV) Ta 10 A K 2.5 Cu foil Schottky Barrier Diodes (SBD) IF V F 1 IR VR Average forward current IF(AV) (A) 0.8 2.0 20 2.5 1 Ta = 125C 10-1 Forward current IF (A) Reverse current IR (A) 1.5 10-1 75C 25C - 20C Ta = 125C 10-2 1.0 10-2 10-3 75C 0.5 10-3 10-4 25C 0 0 50 100 150 10-4 0 0.1 0.2 0.3 0.4 0.5 0.6 10-5 0 10 20 30 40 50 60 Ambient temperature Ta (C) Forward voltage VF (V) Reverse voltage VR (V) Ct VR 600 Terminal capacitance Ct (pF) 500 400 300 200 100 0 0 10 20 30 40 50 60 Reverse voltage VR (V) 2 |
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