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SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTB1124. D K F F D A H KTD1624 EPITAXIAL PLANAR NPN TRANSISTOR C G J B E MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC ICP PC PC* Tj Tstg RATING 60 50 6 3 6 500 1 150 -55 0.8t) 150 UNIT V V V A A mW W 1 2 3 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking h FE Rank Lot No. * : Package mounted on ceramic substrate(250mm2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE (1) Classification A:100 200, ICBO IEBO ) TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100 VCE=2V, IC=3A IC=2A, IB=100 IC=2A, IB=100 VCE=10V, IC=50 VCB=10V, f=1 PW=20s DC < 1% = INPUT SYMBOL MIN. 100 35 - Y TYP. 0.19 0.94 150 25 70 650 35 MAX. 1 1 400 0.5 1.2 nS V V Type Name UNIT. hFE(1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob ton tstg tf B:140 280, , IE=0 I B1 R8 I B2 25 - VR 50 100 -5V 10IB1=-10I B2 =I C =1A 470 25V - C:200 400 2001. 12. 6 Revision No : 4 1/3 KTD1624 I C - V CE 5.0 COLLECOTR CURRENT I C (A) 4.0 3.0 2.0 1.0 0 0 0.4 0.8 1.2 1.6 COLLECTOR CURRENT I C (A) 100mA 80mA 60mA 40mA 20mA 10mA 5mA I C - V BE 3.2 2.8 2.4 2.0 Ta=7 5C 25 C -25 C VCE =2V 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 I B =0 2.0 0.8 1.0 1.2 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE EMITTER VOLTAGE V BE (V) I C - V CE 2.0 COLLECTOR CURRENT I C (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16 8mA h FE - I C 1k DC CURRENT GAIN h FE 500 300 VCE =2V 7mA 6mA 5mA 4mA 3mA 2mA 1mA I B =0 100 50 30 18 20 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) V BE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =20 V CE(sat) - I C COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 I C /I B =20 10 5 3 1 0.5 0.3 Ta=25 C Ta=-25 C Ta=75 C 100 50 30 Ta=-25 C Ta=75 C Ta=25 C 0.1 0.01 0.03 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2001. 12. 6 Revision No : 4 2/3 KTD1624 C ob - V CB GAIN-BANDWIDTH PRODUCT f T (MHz) OUTPUW CAPACITANCE C ob (pF) 100 50 30 f=1MHz f T - IC 1k 500 300 V CE =10V 10 5 3 100 50 30 1 1 3 5 10 30 50 100 200 COLLECTOR BASE VOLTAGE V CB (V) 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) COLLECTOR POWER DISSIPATION PC (W) P C - Ta 1.2 1.0 0.8 0.6 0.4 0.2 0 2 1 1 MOUNTED ON CERAMIC SAFE OPERATING AREA 10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 MOUNTED ON CERAMIC BOARD (250mm 2 x0.8t) Ta=25 C ONE PULSE I CP SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C s 1m s m 10 s 0m 10 I C MAX. D C O pe ra tio n 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 0.02 0.1 0.3 1 3 10 30 100 COLLECTOR EMITTER VOLTAGE V CE (V) 2001. 12. 6 Revision No : 4 3/3 |
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