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| Power Transistors 2SC5926 Silicon NPN triple diffusion planar type Unit: mm 4.20.2 For power amplification Features * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector-emitter saturation voltage VCE(sat) * Allowing supply with the radial taping 10.00.2 1.00.2 90 2.50.1 5.00.1 13.00.2 1.20.1 1.480.2 C 1.0 2.250.2 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 80 60 6 3 6 15 2.0 150 -55 to +150 C C Unit V V V A A W 18.00.5 Solder Dip 0.650.1 0.650.1 0.350.1 1.050.1 0.550.1 2.50.2 2.50.2 123 0.550.1 1: Base 2: Collector 3: Emitter MT-4-A1 Package Internal Connection C B E Note) *: Non-repetitive peak collector current Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1 Symbol VCEO ICBO ICEO IEBO hFE1 *2 hFE2 Collector-emitter saturation voltage Turn-on time Storage time Fall time VCE(sat) ton tstg tf Conditions IC = 10 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.5 A VCE = 4 V, IC = 3 A IC = 1 A, IB = 20 mA IC = 1 A, Resistance loaded IB1 = 0.1 A, IB2 = - 0.1 A VCC = 50 V 0.2 1.5 0.1 500 100 0.7 V s s s Min 60 100 100 100 2 300 Typ Max Unit V A A A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 500 to 1 500 P 1 300 to 2 300 Publication date: November 2004 SJD00326AED 1 |
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