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| Hall Device LT140SA LT140SA Hall Voltage 160mV Thin-Type Package GaAs Hall Device s Outline Dimensions (Unit : mm) s Features Small temperature coefficient of the Hall voltage Good linearity of the Hall voltage Small imbalanced voltage Directly DC voltage applicable s Applications Brushless motors VCR, CD, CD-ROM, FDD Measuring equipment Gauss meters, magnetic substance detectors Noncontact sensors Microswitches, tape-end detection Other magnetic detection 0.3 1 0.3 4 Silver Mark 0.6 2.85 1.45 0.7 0.7 2 0.3 0.9 1.45 3 0.3 0.14+0.1 -0.04 1.40 1.40 Terminal connection 1 : + VC Input 2 : + VH Output 3 : - VC Input 4 : - VH Output 0.2 Parameter Control voltage Control current Power dissipation Operating temperature Storage temperature Soldering temperature*1 *1 Soldering time:10 seconds Symbol Rating VC 12 IC 15 150 PD -20 to +125 Topr -55 to +150 Tstg 260 Tsol Unit V mA mW C C C As for dimensions of tape-packaged products, refer to page 44 . s Electrical Characteristics Parameter No-load Hall voltage *1 Imbalanced ratio *2 Input resistance Output resistance Drift of imbalanced voltage vs. temperature Temperature coefficient of Hall voltage Temperature coefficient of input resistance Linearity of Hall voltage Rank A Rank B Rank C Symbol VH VHO/VH RIN ROUT |VHO| Conditions VC=6V,B=100mT VC=6V, (B=0)/(B=100mT) IM=1mA, B=0mT IM=1mA, B=0mT VC=6V, B=0mT, Ta=-20C to 25C VC=6V, B=0mT, Ta=25C to 125C IC=6mA, B=100mT, T1=-20C, T2=125C IM=1mA, B=0mT, T1=-20C, T2=125C IC=6mA, B1=50mT, B2=100mT MIN. 145 2 -5 -2 650 1 300 TYP. 160 800 1 600 5 -0.04 0.2 0.3 MAX. 175 12 5 -12 950 1 900 - 0.6 0.4 s Absolute Maximum Ratings (Ta=25C) (Ta=25C) Unit mV % mV %/C %/C % *1 No-load Hall voltage is nearly proportional to Vc (within the range of 1 to 6V) at temperatures of -20C to + 125C. Keep the voltage within the allowable power dissipation range. *2 Imbalanced ratio is in +/-12% within the range of Vc=1 to 6V. VH=VM-VHO 1 {VH(T2)-VH(T1)} = X100 X VH(T1) (T2-T1) {RIN(T2)-RIN(T1)} 1 X X100 = (T2-T1) RIN(T1) {KH(B2)-KH(B1)} VH X2X100, KH= = {KH(B1)+KH(B2)} (ICXB) VM:Observed Hall voltage VHO:Imbalanced voltage KH:Sensitivity In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device. Hall Device Fig. 1 Hall Voltage vs. Ambient Temperature B=100mT LT140SA Fig. 2 2 000 1 600 1 200 800 400 Input Resistance vs. Ambient Temperature B=0mT IM=1mA 200 160 120 80 40 IC=6mA Input resistance RIN () VC=6V Hall voltage VH (mV) 0 -20 0 40 80 120 Ambient temperature Ta (C) 0 -20 0 40 80 120 Ambient temperature Ta (C) Fig. 3 2 000 1 600 1 200 800 400 Hall Voltage vs. Magnetic Flux Density VC=6V Ta=25C Fig. 4 400 320 240 160 80 Hall Voltage vs. Control Current B=100mT Ta=25C Hall voltage VH (mV) Hall voltage VH (mV) 0 0 200 400 600 800 1 000 Magnetic flux density B (mT) 0 0 4 8 12 Control current IC (mA) Fig. 5 400 320 240 160 80 Hall Voltage vs. Control Voltage B=100mT Ta=25C Fig. 6 200 Power Dissipation vs. Ambient Temperature Power dissipation PD (mW) 0 4 8 12 Control voltage VC (V) Hall voltage VH (mV) 160 120 80 40 0 0 0 40 80 120 160 Ambient temperature Ta (C) 200 |
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