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| SKM 400 GA 128 D Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tcase = 25 (80) C I CRM Tcase = 25 (80) C, tp =1 ms VGES T vj, (Tstg) TOPERATION Tstg Visol AC, 1 min. Inverse Diode I FAV = - I C Tcase = 25 (80) C I FRM Tcase = 25 (80) C, tp < 1 ms I FSM tp = 10 ms; sin.; T j = 150 C Freewheeling Diode I FAV = - I C Tcase = 25 (80) C I FRM Tcase = 25 (80) C, tp < 1 ms I FSM tp = 10 ms; sin.; T j = 150 C T case = 25 C, unless otherwise specified Values 1200 530 (380) 1060 (760) 20 - 40 ... +150 (125) 4000 390 (260) 1060 (760) 2900 Units V A A V C V A A A A A A SEMITRANS TM M SPT IGBT Module SKM 400 GA 128 D Preliminary Data SEMITRANS 4 Characteristics Symbol Conditions IGBT VGE(TO) I CES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC+ EE Tcase = 25 C, unless otherwise specified min. 4,5 typ. 5,5 1,0 (0,9) 3,3 (4,7) 2,0 (2,3) 26 3 3 0,18(0,22) 120 70 800 75 31(33) 2,0 (1,8) 1,1 (tbd) 3 (tbd) 345 48 19 max. 6,45 tbd 1,15 4,2(tbd) 2,4 Units V mA V m V nF nF nF nH m ns ns ns ns mJ VGE = V CE, IC = 12 mA VGE = 0, VCE = VCES , Tj = 25 (125) C Tj = 25 (125) C VGE = 15 V, Tj = 25 (125) C IC = 300 A, VGE = 15 V, chip level VGE = 0, VCE = 25 V, f = 1 MHz GA Features * Homogeneous Si * SPT = Soft-Punch-Through technology * VCE(sat) with positive temperature coefficient * High short circuit capability, self limiting to 6 x I C Typical Applications * AC inverter drives * UPS * Electronic welders at fsw > 20kHz 20 resistance, terminal-chip 25 (125) C under following conditions: VCC = 600 V, I C = 300 A, RGon = RGoff = 5 , Tj = 125 C, VGE 15 V t d(on) tr t d(off) tf Eon (Eoff) Inverse Diode under following conditions: VF = VEC IF = 300 A; V GE = 0 V; Tj = 25 (125) C VT(TO) Tj = 25 (125) C rT Tj = 25 (125) C I RRM IF = 300 A; Tj = 125 C Q rr di/dt = 5200 A/s Err VGE = 0 V FWD under following conditions: VF = VEC IF = A; V GE = 0 V; Tj = 25 (125) C VTO Tj = 25 (125) C rT Tj = 25 (125) C I RRM IF = A; T j = 125 C Q rr VGE = 0 V Err Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(j-c)FD per FWD Rth(c-s) per module Mechanical Data Ms to heatsink (M6) Mt for terminals (M5) w 2,5 1,2 4,3(tbd) V V m A C mJ V V m A C mJ I:\Marke tin\FRA ME DA T\datbl\B06-ig bt\400 ga128d .fm IDC 500 A for T Terminal = 100 C 0,055 0,125 0,038 3 2,5 5 5 330 K/W K/W K/W K/W Nm Nm g (c) by SEMIKRON 020828 1 SKM 400 GA 128 D M400GA128.XLS-1 M400GA128.XLS-2 600 IC [A] 500 600 tP = 80s TJ = 25C VGE = 15V TJ = 125C V GE = 17V V GE = 15V V GE = 11V IC [A] 500 TJ = 150C V GE 15 V 400 400 300 300 Limited by terminals to IDC=500A @ TTerminal =100C 200 200 100 100 0 0 1 2 3 4 VCE [V] 5 0 0 20 40 60 80 100 120 140 160 TC [C] Fig. 1 Typ. output characteristic, inclusive RCC+ EE Fig. 2 Rated current vs. temperature IC = f (TC ) 80 E [mJ] 60 E off Tj = 125 C VCC = 600 V VGE = 15V RG = 5 M400GA128.XLS-3 M400GA128.XLS-4 120 E [mJ] Tj = 125 C V CC = 600 V V GE = 15V I C =300A E on E on 80 Eoff 40 E rr 20 40 Er r 0 0 200 400 600 IC [A] 800 0 0 10 20 RG [] 30 Fig. 3 Typ. turn-on /-off energy = f (IC ) Fig. 4 Typ. turn-on /-off energy = f (R G) M400GA128.XLS-6 M400GA128.XLS-5 800 IC [A] 600 tP = 80 s V CE = 20V 20 VGE [V] ICpuls = 300A V cc = 600V 10 400 tJ = 125C 0 200 tJ = 25C 0 0 4 8 12 VGE [V] 16 -10 0 1000 2000 3000 4000 QG [nC] Fig. 5 Typ. transfer characteristic 2 Fig. 6 Typ. gate charge characteristic 020828 (c) by SEMIKRON SKM 400 GA 128 D M400GA128.XLS-7 M400GA128.XLS-8 1000 tdoff 10000 Tj = 125 C V CC = 600 V V GE = 15V I C = 300A t [ns] t [ns] 1000 tdon 100 tr tf Tj = 125 C VCC = 600 V VGE = 15V RG = 5 tdoff tdon tr 100 tf t 10 10 0 200 400 IC [A] 600 0 10 20 RG [] 30 Fig. 7 Typ. switching times vs. IC M400GA128.XLS-9 Fig. 8 Typ. switching times vs. gate resistor RG M400GA128.XLS-10 0,1 Zthjc [K/W] 0,01 D=0,50 0,20 0,10 0,05 0,02 0,01 1 Zthjc [K/W] 0,1 0,001 0,01 D=0,5 0,2 0,1 0,05 0,02 0,01 0,0001 single pulse 0,001 single pulse 0,00001 0,00001 0,0001 0,001 0,01 0,1 tP [s] 1 0,0001 0,00001 0,0001 0,001 0,01 0,1 tP [s] 1 Fig. 9 Transient thermal impedance of IGBT Zthp(j-c) = f (tp); D = t p / t c = t p * f M400GA128.XLS-11 Fig. 10 Transient thermal impedance of FWD Zthp(j-c)D = f (tp ); D = tp / tc = t p * f M400GA128.XLS-12 400 I:\Marke tin\FRA ME DA T\datbl\B06-ig bt\400 ga128d .fm 400 IRR [A] VCC = 600V TJ = 125 C = 15 V = 300 A RG= 5 8 12 IF [A] 300 tp = 80s 300 200 Tj=125C, typ. Tj=25C, typ. 100 Tj=125C, max. Tj=25C, max. 200 17 25 100 0 0 1 2 3 V F [V] 4 0 0 2000 4000 6000 diF/dt [A/s] Fig. 11 CAL diode forward characteristic (c) by SEMIKRON Fig. 12 Typ. CAL diode peak reverse recovery current 020828 3 SKM 400 GA 128 D M400GA128.XLS-13 80 Qrr [C] 60 12 17 25 40 V CC = 600V TJ = 125 C = 15 V = 300 A This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 60747-1, Chapter IX. RG = 5 8 I F= 500 A 300 A 200 A 100 A Packing Unit Mounting Kit 3 pcs 10 pcs SEMIBOX B Ident-No. 33321100 20 50 A 0 0 2000 4000 6000 8000 diF/dt [A/s] Fig. 13 Typ. CAL diode recovered charge SEMITRANS 4 Case D 59 UL Recognized File no. E 63 532 SKM 400 GA 128 D Dimensions in mm Case outline and circuit diagrams This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 020828 (c) by SEMIKRON |
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