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| Transistors MSG33001 SiGe HBT type For low-noise RF amplifier 0.33+0.05 -0.02 0.10+0.05 -0.02 Unit: mm Features * Compatible between high breakdown voltage and high cutoff frequency * Low-noise, high-gain amplification * Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.8 mm x 1.2 mm (height 0.52 mm) 3 0.15 min. 0.800.05 1.200.05 0.520.03 0 to 0.01 5 (0.40) (0.40) 0.800.05 1.200.05 5 0.15 min. 0.23+0.05 -0.02 1 2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg mm2 Rating 9 6 1 30 100 125 -55 to +125 Unit V V V mA mW C C 1: Base 2: Emitter 3: Collector SSSMini3-F1 Package Marking Symbol: 5S Note) *: Copper plate at the collector is 5.0 mm x 0.8 mm. on substrate at 10 mm x 12 Electrical Characteristics Ta = 25C 3C Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Forward transfer gain Noise figure Collector output capacitance (Common base, input open circuited) Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 3 mA VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz 9.0 100 19 11.0 1.4 0.3 2.0 0.6 Min Typ Max 1 1 1 220 Unit nA A A GHz dB dB pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 0.15 max. Absolute Maximum Ratings Ta = 25C Publication date: October 2004 SJC00299BED 1 MSG33001 PC Ta 120 IC VCE IB = 80 A 160 hFE IC VCE = 3 V Collector power dissipation PC (mW) Collector current IC (mA) 70 A 60 A 8 50 A 40 A 30 A 4 20 A 10 A Forward current transfer ratio hFE 12 80 120 80 40 40 0 0 40 80 120 0 0 2 4 6 0 0.01 0.1 1 10 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) fT I C Collector output capacitance C (pF) (Common base, input open circuited) ob 25 VCE = 3 V f = 2 GHz 0.8 0.7 Cob VCB 15 GP I C f = 1 MHz 10 VCE = 3 V f = 2 GHz Transition frequency fT (GHz) 20 15 Power gain GP (dB) 0 2 4 6 0.6 0.5 0.4 5 10 0 0.3 0.2 0.1 5 -5 0 1 10 100 -10 0.1 1 10 100 Collector current IC (mA) Collector-base voltage VCB (V) Collector current IC (mA) S21e2 IC VCE = 3 V f = 2 GHz NF IC VCE = 3 V f = 2 GHz S11 , S22 1.0 0.5 2.0 VCE = 3 V IC = 10 mA Forward transfer gain S21e (dB) 12 6 2 Noise figure NF (dB) 8 4 0 S11 2 1 S22 4 - 0.5 0 1 10 100 -2.0 -1.0 0 0.1 1 10 100 Collector current IC (mA) Collector current IC (mA) 2 SJC00299BED MSG33001 S21e2, S12e2 f 40 Forward transfer gain S21e2, Reverse transfer gain S12e2 (dB) 20 S21e2 0 -20 S12e2 -40 0 1 2 3 Frequency f (GHz) SJC00299BED 3 |
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