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| Schottky Barrier Diodes (SBD) MA2Z720 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.625 * Sealed in S-mini type 2-pin package * Allowing to rectify under (IF(AV) = 500 mA) condition * Allowing high-density mounting 2 0.16 - 0.06 + 0.1 1 1.25 0.1 0.5 0.1 I Features 0.3 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 40 40 500 2 125 -55 to +150 Unit V V mA A C C 0.4 0.1 1.7 0.1 2.5 0.2 0.4 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2L Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr Conditions VR = 35 V IF = 500 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 IR, RL = 100 60 5 Min Typ Max 100 0.55 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and leakage of current from the equipment used. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr Input Pulse tp 10% t IF Output Pulse trr t Irr = 0.1 * IR IF = 100 mA IR = 100 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.7 0.1 1 MA2Z720 IF V F 10 Schottky Barrier Diodes (SBD) IR V R 100 Ta = 25C Ta = 125C 10-1 Ct VR Terminal capacitance Ct (pF) 60 1 75C 25C 10-2 80 Forward current IF (A) 10-1 - 20C Reverse current IR (A) Ta = 125C 10-3 75C 60 10-2 10-4 25C 10-5 40 10-3 10-4 20 10-5 0 0.1 0.2 0.3 0.4 0.5 0.6 10-6 0 10 20 30 40 50 0 0 10 20 30 40 50 60 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) 2 |
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