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| IHW40T120 ^ Soft Switching Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C * * * * * * Short circuit withstand time - 10s Designed for : - Soft Switching Applications - Induction Heating Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Very soft, fast recovery anti-parallel EmConTM HE diode Low EMI Application specific optimisation of inverse diode G E Type IHW40T120 VCE 1200V IC 40A VCE(sat),Tj=25C 1.8V Tj,max 150C Marking H40T120 Package TO-247AC Ordering Code Q67040-S4653 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Short circuit withstand time 1) Symbol VCE IC Value 1200 75 40 Unit V A ICpuls IF 105 105 31 19.8 IFpuls IFSM 78 200 160 VGE tSC Ptot Tj Tstg 20 10 270 -40...+150 -55...+150 260 V s W C 47 A VGE = 15V, VCC 1200V, Tj 150C Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2 Mar-04 Power Semiconductors IHW40T120 ^ Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 1. 5mA VCE(sat) V G E = 15V, I C = 40A T j = 25 C T j = 12 5 C T j = 15 0 C Diode forward voltage VF V G E = 0V, I F = 1 8 A T j = 25 C T j = 12 5 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 1. 5mA, V C E = V G E V C E = 1200V, V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 40A 21 6 0.4 4.0 600 nA S 5.0 1.65 1.7 1.7 5.8 6.5 mA 2.15 1.8 2.1 2.3 2.3 1200 V Symbol Conditions Value min. Typ. max. Unit RthJA TO-247AC 40 RthJCD 1.1 RthJC 0.45 K/W Symbol Conditions Max. Value Unit Power Semiconductors 2 Rev. 2 Mar-04 IHW40T120 ^ Soft Switching Series Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V,t S C 10s V C C = 600V, T j = 25 C 210 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 40A V G E = 1 5V T O -247A C 13 nH 2500 130 110 203 nC pF Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current trr Qrr Irrm T j = 25 C, V R = 8 00V, I F = 1 8A , di F / dt = 80 0A / s 195 1880 20.2 ns nC A td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 6 00V, I C = 40A, V G E = 0/ 1 5V , R G = 1 5 , L 2 ) = 180nH, 2) C =39pF Energy losses include "tail" and diode reverse recovery. 48 34 480 70 3.3 3.2 6.5 mJ ns Symbol Conditions Value min. typ. max. Unit 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2 Mar-04 Power Semiconductors IHW40T120 ^ Soft Switching Series Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current trr Qrr Irrm T j = 15 0 C V R = 8 00V, I F = 1 8A , di F / dt = 80 0A / s 300 3540 25.3 ns nC A td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 6 00V, I C = 40A, V G E = 0/ 1 5V , R G = 15, L 1 ) = 180nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 52 40 580 120 5.0 5.4 10.4 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 4 Rev. 2 Mar-04 Power Semiconductors IHW40T120 ^ Soft Switching Series 100A 100A TC=80C tp=3s 10s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A TC=110C 10A 50s 150s 1A 500s 60A 40A Ic 20A Ic 0,1A 1V 20ms DC 0A 10Hz 100Hz 1kHz 10kHz 100kHz 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 15) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V) 70A 250W 60A IC, COLLECTOR CURRENT POWER DISSIPATION 200W 50A 40A 30A 20A 10A 0A 25C 150W Ptot, 100W 50W 0W 25C 50C 75C 100C 125C 75C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) Power Semiconductors 5 Rev. 2 Mar-04 IHW40T120 ^ Soft Switching Series 100A 90A 100A 90A IC, COLLECTOR CURRENT 70A 60A 50A 40A 30A 20A 10A 0A 0V 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT 80A VGE=17V 80A 70A 60A 50A 40A 30A 20A 10A 0A VGE=17V 15V 13V 11V 9V 7V 1V 2V 3V 4V 5V 6V 0V 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C) 100A 90A VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C IC=40A IC=25A IC=10A IC=80A IC, COLLECTOR CURRENT 80A 70A 60A 50A 40A 30A 20A 10A 0A 0V 2V TJ=150C 25C 4V 6V 8V 10V 12V 0C 50C 100C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 6 Rev. 2 Mar-04 IHW40T120 ^ Soft Switching Series td(off) 1000 ns td(off) 100 ns tf td(on) tr 10 ns t, SWITCHING TIMES 100ns tf td(on) 10ns tr 1ns t, SWITCHING TIMES 20A 40A 60A 0A 1 ns 5 15 25 35 45 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) td(off) VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6V 5V 4V min. 3V 2V 1V 0V -50C max. typ. t, SWITCHING TIMES 100ns tf td(on) tr 10ns 0C 50C 100C 150C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E) TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA) Power Semiconductors 7 Rev. 2 Mar-04 IHW40T120 ^ Soft Switching Series *) Eon and Etsinclude losses due to diode recovery E, SWITCHING ENERGY LOSSES 20,0mJ Ets* E, SWITCHING ENERGY LOSSES 25,0mJ 15 mJ *) Eon and Ets include losses due to diode recovery Ets* 10 mJ Eon* Eoff 5 mJ 15,0mJ Eon* 10,0mJ Eoff 5,0mJ 0,0mJ 10A 20A 30A 40A 50A 60A 70A 0 mJ 5 15 25 35 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=15, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) 15mJ *) E on and E ts include losses due to diode recovery 15mJ *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E ts* 10mJ E, SWITCHING ENERGY LOSSES 10mJ Ets* E off 5mJ E on* 5mJ E off Eon* 0mJ 50C 100C 150C 0mJ 400V 500V 600V 700V 800V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E) VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 2 Mar-04 IHW40T120 ^ Soft Switching Series Ciss VGE, GATE-EMITTER VOLTAGE 15V 1nF 240V 10V 960V c, CAPACITANCE Coss 100pF Crss 5V 0V 0nC 50nC 100nC 150nC 200nC 250nC 10pF 0V 10V 20V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 15s IC(sc), short circuit COLLECTOR CURRENT 300A 10s 200A 5s 100A tSC, 0s 12V 14V 16V 0A 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C) VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C) Power Semiconductors 9 Rev. 2 Mar-04 IHW40T120 ^ Soft Switching Series ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE 10 K/W D=0.5 0 D=0.5 0.2 0.1 0.05 R,(K/W) 0.159 0.133 0.120 0.038 10 K/W -1 0.2 0.1 10 K/W -1 10 K/W -2 0.02 0.01 single pulse , (s) -1 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.51*10 R2 0.05 0.02 0.01 single pulse R,(K/W) 0.2113 0.2922 0.3666 0.2248 R1 , (s) -2 7.23*10 -3 8.13*10 -3 1.09*10 -4 1.55*10 R2 R1 C1= 1/R1 C2= 2/R2 C1= 1/R1 C2= 2/R2 10 K/W 10s -3 100s 1ms 10ms 100ms 10 K/W 10s -2 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) 600ns Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME TJ=150C 3C 500ns 400ns 300ns 200ns 100ns 0ns 200A/s 2C TJ=25C TJ=150C TJ=25C 400A/s 600A/s 800A/s 1C 0C 200A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) Power Semiconductors 10 Rev. 2 Mar-04 IHW40T120 ^ Soft Switching Series TJ=150C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT REVERSE RECOVERY CURRENT TJ=25C 30A 25A 20A 15A 10A 5A 0A -300A/s TJ=25C TJ=150C -200A/s -100A/s Irr, 200A/s 400A/s 600A/s 800A/s -0A/s 200A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) 40A TJ=25C 150C 2,0V IF=30A 1,5V 15A 8A 5A 1,0V 30A 20A 10A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 0,5V 0A 0V 1V 2V 0,0V -50C 0C 50C 100C VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Power Semiconductors 11 Rev. 2 Mar-04 IHW40T120 ^ Soft Switching Series TO-247AC symbol dimensions [mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 6.22 min 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 3.61 6.12 [inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409 A B C D E F G H K L M N P 0.76 max 0.0299 max 0.1421 Q Power Semiconductors 12 Rev. 2 Mar-04 IHW40T120 ^ Soft Switching Series i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics 1 Tj (t) p(t) r1 r2 2 n rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L =180nH and Stray capacity C =39pF. Power Semiconductors 13 Rev. 2 Mar-04 |
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