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| DSEC 60-03A DSEC 60-03AR HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 30 A VRRM = 300 V trr = 30 ns TO-247 AD Version A VRSM V 300 300 VRRM V 300 300 Type ISOPLUS 247TM Version AR DSEC 60-03A DSEC 60-03AR A C A A C A C (TAB) A C A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md * FC VISOL ** Weight Conditions TC = 145C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 300 1.2 0.3 -55...+175 175 -55...+150 A A A mJ A C C C W Nm N V~ g Features q q q q q q q q TC = 25C mounting torque mounting force with clip 50/60 Hz, RMS, t = 1 minute, leads-to-tab typical 165 0.8...1.2 10...50 2500 6 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Version AR isolated and UL registered E153432 Applications q q q q * Verson A only; ** Version AR only Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 30 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 250 1 0.91 1.25 0.9 0.25 mA mA V V K/W K/W ns q q q q Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders VF y RthJC RthCH trr IRM Advantages q IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms TVJ = 100C 30 7 q A q Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf 025 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 DSEC 60-03A DSEC 60-03AR 60 A IF 40 TVJ=150C TVJ=100C TVJ= 25C 20 200 5 0 0.0 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 10 400 Qr 800 TVJ = 100C nC 600 IF = 60A IF = 30A IF = 15A 15 VR = 150V IRM 20 IF = 60A IF = 30A IF = 15A 30 A 25 TVJ = 100C VR = 150V 0.5 1.0 VF V 1.5 Fig. 1 Forward current IF versus VF 1.4 Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns TVJ = 100C VR = 150V Fig. 3 Peak reverse current IRM versus -diF/dt 14 V VFR 12 tfr 0.8 VFR 0.6 10 0.4 0.2 8 0.0 600 A/ms 1000 800 diF/dt TVJ = 100C IF = 30A 1.2 s 1.0 tfr 1.2 Kf 1.0 IRM trr 80 70 IF = 60A 60 Qr IF = 30A IF = 15A 0.8 0.6 50 0.4 0 40 80 120 C 160 TVJ 40 0 200 400 600 -diF/dt 800 A/ms 1000 0 200 400 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.465 0.179 0.256 ti (s) 0.005 0.0003 0.04 0.1 ZthJC 0.01 1 2 3 0.001 0.0001 0.00001 DSEP30-03A/DSEC 60-03A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 025 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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