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DSEC 16-12A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 10 A VRRM = 1200 V trr = 40 ns TO-220 AB VRSM V 1200 VRRM V 1200 Type DSEC 16-12A A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Test Conditions TC = 115C; rectangular, d = 0.5 tP < 10 s; rep. rating, pulse width limited by TVJM TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 8 A; L = 180 H VA = 1.25*VR typ.; f = 10 kHz; repetitive Maximum Ratings 14 10 tbd 40 6.9 0.8 -55...+175 175 -55...+150 A A A A mJ A C C C W Nm lb.in. g Applications q Features q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 60 0.45...0.55 4...5 2 q q q Symbol IR x Test Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 10 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 60 0.25 1.96 2.94 2.5 0.5 A mA V V K/W K/W ns q q q q VF y RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages q IF = 1 A; -di/dt = 50 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 12 A; -diF/dt = 100 A/s TVJ = 100C 40 8.5 A q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see IXYS Catalog 2000 (CD) IXYS reserves the right to change limits, test conditions and dimensions. (c) 1999 IXYS All rights reserved 1-2 937 DSEC 16-12A 30 A 25 IF 20 TVJ=150C 2000 nC 1500 Qr 1000 TVJ=100C TVJ= 100C VR = 600V 40 TVJ= 100C A VR = 600V IF= 20A IF= 10A IF= 5A IRM 30 15 10 TVJ= 25C 20 IF= 20A IF= 10A IF= 5A 500 10 5 0 0 1 2 3 VF 4V 0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 150 ns 140 TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 120 V VFR tfr TVJ= 100C IF = 10A VFR 2.0 1.2 s tfr 0.8 1.5 Kf 1.0 trr 130 120 110 IF= 20A IF= 10A IF= 5A 80 IRM 40 0.4 0.5 Qr 100 90 0 0 200 400 600 -diF/dt 800 A/s 1000 0 200 400 0.0 600 A/s 1000 800 diF/dt 0.0 0 40 80 120 C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.558 0.493 ti (s) 0.0052 0.0003 0.017 0.01 0.001 0.00001 DSEP 8-12A / DSEC 16-12A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case (c) 1999 IXYS All rights reserved 2-2 |
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