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DG211B/212B Vishay Siliconix Improved Quad CMOS Analog Switches FEATURES D D D D D D D D "22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance--rDS(on): 50 W Low Leakage--ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching--tON: 120 ns Low Charge Injection--Q: 1 pC BENEFITS D D D D D D D Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG211/212 Space Savings (TSSOP) APPLICATIONS D D D D D D D Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits DESCRIPTION The DG211B/212B analog switches are highly improved versions of the industry-standard DG211/212. These devices are fabricated in Vishay Siliconix' proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. up to "22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B can handle The DG211B is a normally closed switch and the DG212B is a normally open switch. (See Truth Table.) FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG211B Dual-In-Line, SOIC and TSSOP IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3 Logic "0" v 0.8 V Logic "1" w 2.4 V TRUTH TABLE Logic 0 1 DG211B ON OFF DG212B OFF ON Document Number: 70040 S-00788--Rev. H, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 4-1 DG211B/212B Vishay Siliconix ORDERING INFORMATION Temp Range Package 16-Pin Plastic DIP DG212BDJ DG211BDY -40 to 85 C 40 85_C 16-Pin Narrow SOIC DG212BDY DG211BDQ 16-Pin TSSOP DG212BDQ Part Number DG211BDJ ABSOLUTE MAXIMUM RATINGS Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX VL Level Shift/ Drive INX V- V+ DX GND V- FIGURE 1. www.vishay.com S FaxBack 408-970-5600 4-2 Document Number: 70040 S-00788--Rev. H, 24-Apr-00 DG211B/212B Vishay Siliconix SPECIFICATIONS Test Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Ranged Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = "14 V VD = "10 V, IS = 1 mA , Full Room Full Room Room Full Room Full Room Full -0.5 -5 -0.5 -5 -0.5 -10 -15 45 2 "0.01 "0.01 "0.02 0.5 5 0.5 5 0.5 10 nA A 15 V D Suffix -40 to 85_C Symbol V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minb Typc Maxb Unit 100 85 W Digital Control Input Voltage High Input Voltage Low Input Current Input Capacitance VINH VINL IINH or IINL CIN VINH or VINL Full Full Full Room -1 5 2.4 V 0.8 1 mA pF Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk tON tOFF Q CS(off) CD(off) CD(on) OIRR XTALK VS =10 V See Figure 2 S Fi CL = 1000 pF, Vg= 0 V, Rg = 0 W VS = 0 V, f = 1 MHz VD = VS = 0 V, f = 1 MHz CL = 15 p , RL = 50 W pF, VS = 1 VRMS, f = 100 kH kHz Room Room Room Room Room Room Room Room 1 5 5 16 90 dB 95 pF F 300 ns 200 pC Power Supply Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- IL VOP Room Full Room Full Room Full Full "4.5 -10 -50 10 50 "22 V 10 50 mA A Document Number: 70040 S-00788--Rev. H, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 4-3 DG211B/212B Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY Test Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Ranged Drain-Source On-Resistance VANALOG rDS(on) VD = 3 V, 8 V, IS = 1 mA Full Room Full 0 90 12 160 200 V W D Suffix -40 to 85_C Symbol V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minb Typc Maxb Unit Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection tON tOFF Q VS = 8 V See Figure 2 S Fi CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room Room Room 4 300 ns 200 pC Power Supply Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- IL VOP Room Full Room Full Room Full Full )4.5 -10 -50 10 50 )25 V 10 50 mA A Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Power Supply Voltages 110 r DS(on) Drain-Source On-Resistance ( W ) - 100 90 80 70 60 50 40 30 20 10 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "20 V "10 V "15 V "5 V r DS(on) Drain-Source On-Resistance ( W ) - 100 90 80 70 60 50 40 30 20 10 0 -15 125_C 85_C 25_C -55_C V+ = 15 V V- = -15 V rDS(on) vs. VD and Temperature -10 -5 0 5 10 15 VD - Drain Voltage (V) www.vishay.com S FaxBack 408-970-5600 4-4 Document Number: 70040 S-00788--Rev. H, 24-Apr-00 DG211B/212B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Single Power Supply Voltages 250 r DS(on) Drain-Source On-Resistance ( W ) - 225 200 20 I S,I D - Current (pA) 175 150 125 10 V 100 75 50 25 0 0 2 4 6 8 10 12 14 16 VD - Drain Voltage (V) -30 -40 -20 12 V 15 V 7V 10 0 -10 -20 IS(off), ID(off) V+ = 5 V 40 30 V+ = 22 V V- = -22 V TA = 25_C ID(on) Leakage Currents vs. Analog Voltage -15 -10 -5 0 5 10 15 20 VANALOG - Analog Voltage (V) Leakage Current vs. Temperature 1 nA V+ = 15 V V- = -15 V VS, VD = "14 V 30 QS, QD - Charge Injection vs. Analog Voltage 20 I S,I D - Current Q - Charge (pC) 100 pA 10 V+ = 15 V V- = -15 V V+ = 12 V V- = 0 V -10 0 IS(off), ID(off) 10 pA -20 1 pA -55 -35 -15 5 25 45 65 85 105 125 -30 -15 -10 -5 0 5 10 15 Temperature (_C) VANALOG - Analog Voltage (V) Off Isolation vs. Frequency 120 110 100 90 OIRR (dB) RL = 50 W 80 70 60 50 40 10 k 100 k 1M 10 M V+ = +15 V V- = -15 V f - Frequency (Hz) Document Number: 70040 S-00788--Rev. H, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 4-5 DG211B/212B Vishay Siliconix TEST CIRCUITS +15 V V+ VS = +2 V S IN 3V GND V- RL 1 kW CL 35 pF D VO Logic Input 3V 50% 0V tOFF 90% tr <20 ns tf <20 ns Switch Output -15 V VO = VS RL RL + rDS(on) VO tON FIGURE 2. Switching Time C +15 V C VS V+ +15 V V+ S1 Rg = 50 W IN1 0V, 2.4 V IN GND V- C RL NC 0V, 2.4 V C = RF bypass XTALK Isolation = 20 log VS VO -15 V S2 D2 VO RL GND -15 V VS VO V- C D1 50 W VS Rg = 50 W 0V, 2.4 V S D VO IN2 Off Isolation = 20 log FIGURE 3. Off Isolation FIGURE 4. Channel-to-Channel Crosstalk +15 V V+ S IN 3V GND V- D VO CL 1000 pF INX ON VO DVO Rg Vg OFF ON DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO -15 V FIGURE 5. Charge Injection www.vishay.com S FaxBack 408-970-5600 Document Number: 70040 S-00788--Rev. H, 24-Apr-00 4-6 DG211B/212B Vishay Siliconix APPLICATIONS +5V VL V+ +15 V Logic Input Low = Sample High = Hold 1 kW +15 V -15 V - LM101A VIN + 2N4400 5 MW 5.1 MW V- 30 pF -15 V Aquisition Time = 25 ms Aperature Time = 1 ms Sample to Hold Offset = 5 mV Droop Rate = 5 mV/s -15 V 50 pF 200 W 1000 pF J500 J507 VOUT J202 +15 V DG211B FIGURE 6. Sample-and-Hold +15 V 160 C4 fC4 Select fC3 Select TTL Control fC2 Select fC1 Select 150 pF C3 Voltage Gain - dB 1500 pF C2 0.015 mF C1 0.15 mF 80 fC1 40 fC2 fC3 fC4 V1 120 0 V- fL1 fL2 fL3 fL4 DG211B GND -40 1 10 100 1k 10 k 100 k 1M -15 V R3 = 1 MW +15 V - R1 = 10 kW LM101A + R2 = 10 kW 30 pF -15 V VOUT Frequency - Hz AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX fL (Unity Gain Frequency) = Max Attenuation = rDS(on) 10 kW 1 2pR1CX [ -47 dB R3 R1 = 100 (40 dB) FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency Document Number: 70040 S-00788--Rev. H, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 4-7 DG211B/212B Vishay Siliconix APPLICATIONS +5 V +15 V 30 pF VIN1 VL V+ +15 V + LM101A VIN2 - DG419 -15 V CH GND V- +15 V RF1 18 kW RF2 9.9 kW RF3 100 kW DG212B -15 V Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) V- Logic High = Switch On -15 V FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains GND RG1 2 kW RG2 100 W RG3 100 W Gain = RF + RG RG www.vishay.com S FaxBack 408-970-5600 4-8 Document Number: 70040 S-00788--Rev. H, 24-Apr-00 |
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