View BLV100_204017.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV100 UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Internal input matching to achieve high power gain * Ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability.
1 2 4 6
MBB012
BLV100
PIN CONFIGURATION
halfpage
c
handbook, halfpage
DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION emitter emitter base collector emitter emitter
3 5
b
e
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance up to Th = 25 C in a common emitter class-AB test circuit. MODE OF OPERATION c.w. class-AB f (MHz) 960 VCE (V) 24 PL (W) 8 GP (dB) >8 c (%) > 50
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCESM VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-emitter voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range junction operating temperature CONDITIONS peak value; VBE = 0 open base open collector DC or average value peak value f > 1 MHz f > 1 MHz; Tmb = 25 C - - - - - - -65 - MIN.
BLV100
MAX. 50 30 4 2.25 3.5 31 150 200
UNIT V V V A A W C C
handbook, halfpage
10
MDA538
handbook, halfpage
60
MDA540
Ptot IC (A) Tmb = 25 C
(1) (1)
(W) 40
(2)
1
Th = 70 C
20
10-1
1
10
VCE (V)
102
0 0 40 80 120 Th (C) (1) RF operation. (2) Short time operation during mismatch. 160
(1) Second breakdown limit (temperature independent).
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curve.
THERMAL RESISTANCE Dissipation = 31 W; Tmb = 25 C. SYMBOL Rth j-mb(RF) Rth mb-h PARAMETER from junction to mounting base from mounting base to heatsink 5.6 0.4 MAX. K/W K/W UNIT
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)CES V(BR)CEO V(BR)EBO ICES hFE Cc PARAMETER collector-emitter breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain collector capacitance CONDITIONS VBE = 0; IC = 8 mA open base; IC = 60 mA open collector; IE = 4 mA VBE = 0; VCE = 30 V VCE = 25 V; IC = 0.6 A VCB = 25 V; IE = Ie = 0; f = 1 MHz VCE = 25 V; IC = 40 mA; f =1 MHz MIN. 50 30 4 - 20 - - - - - 75 13.5 TYP. - - - 2 - -
BLV100
MAX.
UNIT V V V mA ` pF
Cre
feedback capacitance
-
8.4
-
pF
Cc-f
collector-flange capacitance
-
2
-
pF
handbook, halfpage
100
MDA544
handbook, halfpage
60
MDA542
hFE 80
Cc (pF) 40
60
40 20 20
0 0 0.4 0.8 1.2 1.6 IC (A) VCE = 25 V. 2
0 0 10 20 VCB (V) 30
Fig.4
DC current gain as a function of collector current, typical values.
Fig.5
Output capacitance as a function of collector-base voltage, typical values.
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance in a class-AB circuit; Th = 25 C; Rth mb-h = 0.4 K/W, unless otherwise specified. MODE OF OPERATION c.w. class-AB f (MHz) 960 24 VCE (V) 20 ICQ (mA) 8 PL (W) GP (dB) >8 typ. 9
BLV100
c (%) > 50 typ. 55
handbook, halfpage
12
MDA545
60 C (%) 40
handbook, halfpage
15
MDA539
GP (dB) 8
C
PL (W) 10
Gp
4
20
5
0 0 4 8 PL (W)
0 12
0 0 1 2 PS (W) 3
Fig.6
Gain and efficiency as functions of load power, typical values.
Fig.7
Load power as a function of drive power, typical values.
Ruggedness in class-AB operation The BLV100 is capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases, under the following conditions: VCE = 24 V, f = 960 MHz, and rated output power.
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV100
handbook, full pagewidth
R1 VB C7 L5 L6
C6
C8
R2 L8 C9 L7 VCC C10
50 input
C1
,,,,,, ,,,,,, ,,,,,, ,,,,,,
L1 L2 L3 C5 L4 D.U.T. C12 L9 L10 L11 L12 C2 C3 C4 C11 C13 C14
C15
50 output
MDA537
Fig.8 Class-AB test circuit at f = 960 MHz.
List of components (see test circuit) COMPONENT C1, C6, C7, C8, C15 C2, C3, C13, C14 C4, C5 C9 C10 C11, C12 L1, L12 L2, L11 L3 L4 L5 DESCRIPTION multilayer ceramic chip capacitor film dielectric trimmer multilayer ceramic chip capacitor (note 1) 35 V solid aluminium capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 2) microstrip (note 3) microstrip (note 3) microstrip (note 3) microstrip (note 3) 3 turns enamelled 0.8 mm copper wire VALUE 330 pF 1.4 to 5.5 pF 5.1 pF 2.2 F 3 x 100 pF in parallel 6.2 pF 50 50 50 43 9 x 2.4 mm 23 x 2.4 mm 16 x 2.4 mm 3 x 3 mm int. dia. 3 mm; length 5 mm; leads 2 x 5 mm 4312 020 36642 int. dia. 4 mm; length 5 mm; leads 2 x 5 mm 43 50 10 14.5 mm x 3 mm; 4.5 mm x 2.4 mm; 2322 151 71009 2222 128 50228 2222 809 09001 DIMENSIONS CATALOGUE NO.
L6, L8 L7
grade 3B Ferroxcube wideband RF choke 4 turns enamelled 0.8 mm copper wire
L9 L10 R1, R2
microstrip (note 3) microstrip (note 3) 0.4 W metal film resistor
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
Notes 1. American Technical Ceramics capacitor type 100A, or capacitor of the same quality. 2. American Technical Ceramics capacitor type 100B, or capacitor of the same quality.
BLV100
3. The microstrips are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 132 inch.
handbook, full pagewidth
122 mm
copper straps
copper straps
rivets
rivets 70 mm
rivets
M2
rivets
copper straps M3
copper straps
C7
L6 L8 R1 C6 C8 C10 R2 L5 C5 L7 C12 L4 C4 L10 L9 C11 C13 C14 L11 L12 C15 C9
C1
L1
L2
L3
C3
C3
MDA536
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of fixing screws, hollow rivets and straps around the board and under the emitters, to provide a direct contact between the component ground plane.
Fig.9 Component layout for 960 MHz test circuit.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV100
handbook, halfpage
5 Zi
MDA543
handbook, halfpage
10
MDA546
() 4 xi 3
ZL () 8
XL
6 RL
2 ri 1
4
2
0 800
850
900
950
1000 f (MHz)
0 800
850
900
950
1000 f (MHz)
VCE = 24 V; ICQ = 20 mA; PL = 8 W.
VCE = 24 V; ICQ = 20 mA; PL = 8 W.
Fig.10 Input impedance (series components) as a function of frequency, typical values.
Fig.11 Load impedance (series components) as a function of frequency, typical values.
handbook, halfpage
12
MDA541
Gp (dB) 8
handbook, halfpage
4 Zi ZL
MBA451
0 800
850
900
950
f (MHz)
1000
VCE = 24 V; ICQ = 20 mA; PL = 8 W.
Fig.12 Definition of transistor impedance.
Fig.13 Power gain as a function of frequency, typical values.
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV100
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV100
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993
10

▲Up To Search▲

Price & Availability of BLV100

	To Download BLV100 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .