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PD - 94301A
SMPS MOSFET
IRFP90N20D
HEXFET(R) Power MOSFET
l
Applications High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.023
ID
94Ao
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
94o 66 380 580 3.8 30 6.7 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.26 --- 40
Units
C/W
Notes
through o
are on page 8
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1
09/27/01
IRFP90N20D
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 200 --- --- V VGS = 0V, ID = 250A --- 0.24 --- V/C Reference to 25C, ID = 1mA --- --- 0.023 VGS = 10V, ID = 56A 3.0 --- 5.0 V VDS = V GS, ID = 250A --- --- 25 VDS = 200V, VGS = 0V A --- --- 250 VDS = 160V, VGS = 0V, TJ = 150C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 39 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 180 45 87 23 160 43 79 6040 1070 170 8350 420 870 Max. Units Conditions --- S VDS = 50V, ID = 56A 270 I D = 56A 67 nC VDS = 160V 130 VGS = 10V, --- VDD = 100V --- ID = 56A ns --- RG = 1.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, V DS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
1010 56 58
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 94o showing the A G integral reverse --- --- 380 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 56A, VGS = 0V --- 230 340 ns TJ = 25C, IF = 56A --- 1.9 2.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP90N20D
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
100
10
1
5.0V
5.0V
10
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100 1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.5
I D = 94A
ID , Drain-to-Source Current ( )
3.0
T J = 175C
2.5
R DS(on) , Drain-to-Source On Resistance
100.00
(Normalized)
2.0
10.00
T J = 25C
1.5
1.0
1.00 5.0 7.0 9.0
VDS = 15V 20s PULSE WIDTH
11.0 13.0 15.0
0.5
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ, Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRFP90N20D
1000000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
VGS, Gate-to-Source Voltage (V)
12
I D = 56A
100000
10
V DS = 160V V DS = 100V V DS = 40V
C, Capacitance(pF)
10000
Ciss Coss Crss
7
1000
5
100
2
10 1 10 100 1000
0 0 40 80 120 160 200
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00
T J = 175C
10.00
T J = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100 100sec 10 1msec
1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD , Source-toDrain Voltage (V)
1
Tc = 25C Tj = 175C Single Pulse 1 10 100
10msec
0.1 1000 VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP90N20D
100
LIMITED BY PACKAGE
VGS
80
VDS
RD
D.U.T.
+
RG
-VDD
I D, Drain Current (A)
60
10V
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
(Z thJC)
D = 0.50 0.1 0.20
Thermal Response
0.10 0.05 0.01 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T
J
0.001 0.00001
t1/ t 2 = P DM x Z thJC 0.1 +TC 0.0001 0.001 0.01 1
P DM t1 t2
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP90N20D
1 5V 2100
VDS
L
D R IV E R
1680
RG
20V tp
D .U .T
IA S
+ V - DD
EAS , Single Pulse Avalanche Energy (mJ)
ID TOP 23A 40A 56A BOTTOM
1260
A
0 .0 1
840
Fig 12a. Unclamped Inductive Test Circuit
420
V (B R )D SS tp
0 25 50 75 100 125 150 175
Starting T , Junction Temperature J
( C)
IAS
Fig 12c. Maximum Avalanche Energy vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP90N20D
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRFP90N20D
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)
-DDBM 5.3 0 (.20 9) 4.7 0 (.18 5) 2 .50 (.089) 1 .50 (.059) 4
15.90 (.6 26) 15.30 (.6 02) -B-
3.65 (.143 ) 3.55 (.140 ) 0.25 (.01 0) M -A5.50 (.21 7)
2 0.30 (.80 0) 1 9.70 (.77 5) 1 2 3
2X
5.50 (.2 17) 4.50 (.1 77)
NOTES: 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7 -A C .
-C1 4.80 (.583 ) 1 4.20 (.559 ) 4 .30 (.170 ) 3 .70 (.145 )
2 .40 (.094) 2 .00 (.079) 2X 5.45 (.21 5) 2X
1 .40 (.056 ) 3X 1 .00 (.039 ) 0 .25 (.010 ) M 3.4 0 (.1 33) 3.0 0 (.1 18) C AS
0 .80 (.031) 3X 0 .40 (.016) 2.60 (.10 2) 2.20 (.08 7)
L E A D A S S IG N M E N T S 1 2 3 4 GATE D R A IN SOURCE D R A IN
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 0.64mH
R G = 25, IAS = 56A.
o Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
ISD 56A, di/dt 470A/s, VDD V(BR)DSS,
TJ 175C
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/01
8
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