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Index of /ds/BC/
Name Last modified Size Description
Parent Directory BC237.pdf BC237_238_239.pdf BC238.pdf BC239.pdf BC307.pdf BC307_308_309.pdf BC308.pdf BC309.pdf BC327.pdf BC327_BC328.pdf BC328.pdf BC337-16.pdf BC337-25.pdf BC337.pdf BC337_338.pdf BC338.pdf BC368.pdf BC546.pdf 22-Dec-99 00:02 17-Apr-99 00:00 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 17-Apr-99 00:00 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 17-Apr-99 00:00 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 17-Apr-99 00:00 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 70K 70K 70K 70K 69K 69K 69K 69K 92K 92K 92K 25K 25K 31K 31K 31K 35K 70K 70K 70K 70K 70K 70K
BC546_547_548_549_550+ 20-Apr-99 00:00 BC547.pdf BC547A.pdf BC547B.pdf BC547C.pdf 11-Feb-00 00:00 11-Feb-00 00:00 11-Feb-00 00:00 11-Feb-00 00:00
BC548.pdf BC548A.pdf BC548B.pdf BC548C.pdf BC549.pdf BC550.pdf BC556.pdf
11-Feb-00 00:00 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02
70K 21K 21K 21K 70K 70K 69K 69K 69K 69K 69K 69K 62K 62K 62K 62K 62K 62K 62K 62K 35K 35K 35K 84K 84K 84K 38K
BC556_557_558_559_560+ 20-Apr-99 00:00 BC557.pdf BC558.pdf BC559.pdf BC560.pdf BC635.pdf BC635_637_639.pdf BC636.pdf BC636_638_640.pdf BC637.pdf BC638.pdf BC639.pdf BC640.pdf BC807-16.pdf BC807-25.pdf BC807-40.pdf BC807.pdf BC807_BC808.pdf BC808.pdf BC817-25.pdf 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 20-Apr-99 00:00 22-Dec-99 00:02 20-Apr-99 00:00 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 20-Apr-99 00:00 22-Dec-99 00:02 22-Dec-99 00:02
BC817-40.pdf BC817.pdf BC817_BC818.pdf BC818.pdf BC846.pdf
22-Dec-99 00:02 22-Dec-99 00:02 20-Apr-99 00:00 22-Dec-99 00:02 22-Dec-99 00:02
38K 31K 31K 31K 68K 68K 68K 68K 68K 68K 67K 67K 67K 40K 40K 40K 67K 67K 67K 46K 39K 36K 52K 31K 24K 27K 31K
BC846_847_848_849_850+ 20-Apr-99 00:00 BC847.pdf BC848.pdf BC849.pdf BC850.pdf BC856.pdf 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02
BC856_857_858_859_860+ 20-Apr-99 00:00 BC857.pdf BC857A.pdf BC857B.pdf BC857C.pdf BC858.pdf BC859.pdf BC860.pdf BCP52.pdf BCP54.pdf BCV26.pdf BCV27.pdf BCW29.pdf BCW30.pdf BCW31.pdf BCW60A.pdf 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02
BCW60A_B_C_D.pdf BCW60B.pdf BCW60C.pdf BCW60D.pdf BCW61A.pdf BCW61A_B_C_D.pdf BCW61B.pdf BCW61C.pdf BCW61D.pdf BCW65C.pdf BCW68G.pdf BCW71.pdf BCX70G.pdf BCX70H.pdf BCX70J.pdf BCX70K.pdf BCX71G.pdf BCX71H.pdf BCX71J.pdf BCX71K.pdf BCX79.pdf
20-Apr-99 00:00 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 20-Apr-99 00:00 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02 22-Dec-99 00:02
31K 31K 31K 31K 32K 32K 32K 32K 32K 37K 37K 31K 31K 31K 31K 31K 31K 31K 31K 31K 23K
BC237/238/239
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
* LOW NOISE: BC239 TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239 Emitter-Base Voltage : BC237 : BC238/239 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES 50 30 VCEO 45 25 VEBO 6 5 100 500 150 -55 ~ 150 V V mA mW C C 1. Collector 2. Base 3. Emitter V V Rating Unit V V
IC PC TJ T STG
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage :BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-off Current : BC237 : BC238/239 DC Current Gain Collector-Emitter Saturation Voltage Collector Base Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Symbol BVCEO Test Conditions IC=2mA, IB=0 45 25 BVEBO IE=1A, IC=0 6 5 ICES VCE=50V, IB=0 VCE=30V, IB=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=3V, IC=0.5mA VCE=5V, IC=10mA Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC237/238 : BC239 : BC239 CCBO CEBO NF NF VCB=10V, f=1MHz VEB=0.5V, f=1MHz VCE=5V, IC=0.2mA, f=1KHz RG=2kohm VCE=5V, IC=0.2mA RG=2kohm, f=30~15KHz 0.2 0.2 120 0.07 0.2 0.73 0.87 0.62 85 250 3.5 8 2 6 10 4 4 15 15 800 0.2 0.6 0.83 1.05 0.7 nA nA V V V V V MHz MHz pF pF dB dB dB V V V V Min Typ Max Unit
hFE VCE (sat) VBE (sat) VBE (on) fT
0.55
150
hFE CLASSIFICATION
Classification hFE A 120-220 B 180-460 C 380-800
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC237/238/239
NPN EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC307/308/309
PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
* LOW NOISE: BC309 TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309 Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES -50 -30 VCEO -45 -25 -5 -100 500 150 -55 ~ 150 V V V mA mW C C V V Rating Unit
VEBO IC PC TJ T STG
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector Emitter Breakdown Voltage : BC307 : BC308/309 Collector Emitter Breakdown Voltage : BC307 : BC308/309 Emitter Base Breakdown Voltage Collector Cut-off Current : BC307 : BC238/239 DC Current Gain Collector-Emitter Saturation Voltage Collector Base Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Symbol BVCEO Test Conditions IC= -2mA, IB=0 -45 -25 BVCES IC= -10A, IB=0 -50 -30 -5 -2 -2 120 -0.5 -0.7 -0.85 -0.62 130 -15 -15 800 -0.3 V V V nA nA V V V V V MHz pF pF dB dB dB V V Min Typ Max Unit
BVEBO ICES
IE= -10A, IB=0 VCE= -45V, IB=0 VCE= -25V, IB=0 VCE= -5V, IC= -2mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA VCB= -10V, f=1MHz VEB= -0.5V, f=1MHz VCE= -5V, IC= -0.2mA, RG=2K, f=1KHz VCE= -5V, IC= -0.2mA RG=2K, f=30~15KHz
hFE VCE (sat) VBE (sat) VBE (on) fT
-0.55
-0.7
CCBO Collector Base Capacitance CEBO Emitter Base Capacitance Noise Figure : BC237/238 NF : BC239 NF : BC239
6 12 10 4 4
2
hFE CLASSIFICATION
Classification hFE A 120-220 B 180-460 C 380-800
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC307/308/309
PNP EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC327/328
PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
* Suitable for AF-Driver stages and low power output stages * Complement to BC337/BC338 TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Emitter Voltage : BC327 : BC328 Collector-Emitter Voltage : BC327 : BC328 Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES -50 -30 VCEO -45 -25 -5 -800 625 150 -55 ~ 150 V V V mA mW C C 1. Collector 2. Base 3. Emitter V V Rating Unit
VEBO IC PC TJ T STG
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector Emitter Breakdown Voltage : BC327 : BC328 Collector Emitter Breakdown Voltage : BC327 : BC328 Emitter Base Breakdown Voltage Collector Cut-off Current : BC307 : BC338 DC Current Gain Collector-Emitter Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Collector Base Capacitance Symbol BVCEO Test Conditions IC= -10mA, IB=0 -45 -25 BVCES IC= -0.1mA, IB=0 -50 -30 -5 -2 -2 100 60 -100 -100 630 -0.7 -1.2 100 12 V V V nA nA V V Min Typ Max Unit
BVEBO ICES
IE= -10mA, IC=0 VCE= -45V, IB=0 VCE= -25V, IB=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -30mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA VCB= -10V, f=1MHz
hFE hFE2 VCE (sat) VBE (on) fT CCBO
V V MHz pF
hFE CLASSIFICATION
Classification hFE hFE2 A 100-250 60B 160-400 100C 250-630 170-
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC327/328
PNP EPITAXIAL SILICON TRANSISTOR
BC327/328
PNP EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC337-16 / BC337-25
Discrete POWER & Signal Technologies
BC337-16 BC337-25
E
B
TO-92
C
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
45 50 5.0 1.0 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
BC337-16 / BC337-25 625 5.0 83.3 200
Units
mW mW/C C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
33716-25, Rev B
BC337-16 / BC337-25
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V (BR)CEO V (BR)CES V (BR)EBO I CBO Collector-Em itter Breakdown Voltage Collector-Base Breakdown Voltage Em itter-Base Breakdown Voltage Collector Cutoff Current I C = 10 m A, I B = 0 I C = 100 A, I E = 0 I E = 100 A, I C = 0 V CB = 20 V, IE = 0, T A = +25 C V CB = 20 V, IE = 0, T A = +150 C V EB = 5.0 V, IC = 0 45 50 5.0 100 5.0 10 V V V nA A A
I EBO
Em itter Cutoff Current
ON CHARACTERISTICS
hFE DC Current Gain VCE = 1.0 V, IC = 100 mA 337-16 337-25 VCE = 1.0 V, IC = 500 mA IC = 500 mA, IB = 50 mA VCE = 1.0 V, IC = 500 mA 100 160 40 250 400 0.7 1.2 V V
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
BC337/338
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
* Suitable for AF-Driver stages and low power output stages * Complement to BC337/BC328 TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Emitter Voltage : BC337 : BC338 Collector-Emitter Voltage : BC337 : BC338 Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES 50 30 VCEO 45 25 5 800 625 150 -55 ~ 150 V V V mA mW C C 1. Collector 2. Base 3. Emitter V V Rating Unit
VEBO IC PC TJ T STG
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector Emitter Breakdown Voltage : BC337 : BC338 Collector Emitter Breakdown Voltage : BC337 : BC338 Emitter Base Breakdown Voltage Collector Cut-off Current : BC337 : BC338 DC Current Gain Collector-Emitter Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Collector Base Capacitance Symbol BVCEO Test Conditions IC=10mA, IB=0 45 25 BVCES IC=0.1mA, IB=0 50 30 -5 2 2 100 60 100 100 630 0.7 1.2 100 12 V V V nA nA V V Min Typ Max Unit
BVEBO ICES
IE=0.1mA, IC=0 VCE=45V, IB=0 VCE=25V, IB=0 VCE=1V, IC=100mA VCE=1V, IC=300mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=5V, IC=10mA VCB=10V, f=1MHz
hFE1 hFE2 VCE (sat) VBE (on) fT CCBO
V V MHz pF
hFE CLASSIFICATION
Classification hFE hFE2 16 100-250 6025 160-400 10040 250-630 170-
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC368 BC368
BC368
B
CE
TO-92
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
20 25 5.0 2.0 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
BC368 625 5.0 83.3 200
Units
mW mW/C C/W C/W
(c)1997 Fairchild Semiconductor Corporation
BC368
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CES V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 10 mA, IB = 0 I C = 100 A, I E = 0 I E = 10 A, I C = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 0, TA = 150C VEB = 5.0 V, IC = 0 20 25 5.0 10 1.0 10 V V V A mA A
ON CHARACTERISTICS
hFE DC Current Gain I C = 5.0 mA, VCE = 10 V I C = 0.5 A, VCE = 1.0 V I C = 1.0 A, VCE = 1.0 V I C = 1.0 A, IB = 100 mA I C = 1.0 A, VCE = 1.0 V 50 85 60 375 0.5 1.0 V V
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product I C = 10 mA, VCE = 5.0 V, f = 35 MHz 45 MHz
Typical Characteristics
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
500 V CE = 5V 400
125 C
Collector-Emitter Saturation Voltage vs Collector Current
1 = 10
25 C
0.1
125 C - 40 C
300
25 C
200
- 40 C
0.01
100 0 0.001
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
0.01 I
C
0.1 - COLLECTOR CURRENT (A)
P3
1
BC368
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
VBE(ON) BASE-EMITTER ON VOLTAGE (V) -
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1.4 1.2 1
- 40 C
Base-Emitter ON Voltage vs Collector Current
1
= 10
0.8
- 40 C 25 C
0.8 0.6 0.4 0.2 0.01 IC
25 C 125 C
0.6
125 C
0.4
V CE = 5V
1 10 100 I C - COLLECTOR CURRENT (mA)
P3
0.1 - COLLECTOR CURRENT (A)
P3
1
0.2
1000
C OBO - COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current vs Ambient Temperature
I CBO- COLLECTOR CURRENT (nA) 100 V 10
CB
Collector-Base Capacitance vs Collector-Base Voltage
40
= 20V
30
1
20
0.1
10
25
50 75 100 125 T A - AMBIENT TEMPERATURE (C)
150
0 0 4 8 12 Pr 37 16 20 24 28
V CB- COLLECTOR-BASE VOLTAGE (V)
h FE - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
V CE = 10V 400 300 200 100 0
P D - POW ER DISSI PATION (mW)
Power Dissip atio n vs Ambient Temperature
700 600 500 400 300 200 100 0 0 25 50 75 100 TEMPER A URE ( o C) T 125 150
TO- 92
500
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC546/547/548/549/550
SWITCHING AND AMPLIFIER
* HIGH VOLTAGE: BC546, VCEO=65V * LOW NOISE: BC549, BC550 * Complement to BC556 ... BC560
NPN EPITAXIAL SILICON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector Base Voltage : BC546 : BC547/550 : BC548/549 Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549/550 Emitter-Base Voltage : BC546/547 : BC548/549/550 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO 80 50 30 VCEO 65 45 30 VEBO 6 5 100 500 150 -65 ~ 150 V V V V V V mA mW C C V V V Rating Unit
IC PC TJ T STG
1. Collector 2. Base 3. Emitter
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector Cut-off Current DC Current Gain Collector Emitter Saturation Voltage Collector Base Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 Symbol ICBO hFE VCE (sat) VBE (on) VBE (on) fT CCBO CEBO NF NF Test Conditions VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA VCB=10V, f=1MHz VEB=0.5V, f=1MHz VCE=5V, IC=200A f=1KHz, RG=2K VCE=5V, IC=200A RG=2K, f=30~15000MHz Min Typ Max 15 800 250 600 Unit nA mA mA mA mA mA mA MHz pF pF dB dB dB dB
110 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4
580
700 720
6 10 4 4 3
hFE CLASSIFICATION
Classification hFE A 110-220 B 200-450 C 420-800
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC546/547/548/549/550
NPN EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC548 / BC548A / BC548B / BC548C
Discrete POWER & Signal Technologies
BC548 BC548A BC548B BC548C
E
B
TO-92
C
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
30 30 5.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
BC548 / A / B / C 625 5.0 83.3 200
Units
mW mW/C C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
548-ABC, Rev B
BC548 / BC548A / BC548B / BC548C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = +150 C 30 30 30 5.0 15 5.0 V V V V nA A
ON CHARACTERISTICS
hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA 548 548A 548B 548C 110 110 200 420 800 220 450 800 0.25 0.60 0.70 0.77
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA VCE = 5.0 V, IC = 2.0 mA VCE = 5.0 V, IC = 10 mA
0.58
V V V V
SMALL SIGNAL CHARACTERISTICS
hfe NF Small-Signal Current Gain Noise Figure IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz VCE = 5.0 V, IC = 200 A, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 125 900 10 dB
BC556/557/558/559/560
SWITCHING AND AMPLIFIER
* HIGH VOLTAGE: BC556, VCEO= -65V * LOW NOISE: BC559, BC560 * Complement to BC546 ... BC 550
PNP EPITAXIAL SILICON TRANSISTOR
TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Capacitance : BC556 : BC557/560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO -80 -50 -30 VCEO -65 -45 -30 -5 -100 500 150 -65 ~ 150 V V V V mA mW C C V V V Rating Unit
VEBO IC PC TJ T STG
1. Collector 2. Base 3. Emitter
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector Cut-off Current DC Current Gain Collector Emitter Saturation Voltage Collector Base Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Collector Base Capacitance Noise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 Symbol ICBO hFE VCE (sat) VBE (on) VBE (on) fT CCBO NF NF Test Conditions VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA VCE= -5V, IC= -10mA VCB= -10V, f=1MHz VCE= -5V, IC= -200A f=1KHz, RG=2K VCE= -5V, IC= -200A RG=2K f=30~15000MHz Min Typ Max -15 800 -300 -650 Unit nA mV mV mV mV mV mV MHz pF dB dB dB dB
110 -90 -250 -700 -900 -660 150
-600
-750 -800
2 1 1.2 1.2
6 10 4 4 2
hFE CLASSIFICATION
Classification hFE A 110-220 B 200-450 C 420-800
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC556/557/558/559/560
PNP EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC635/637/639
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
* Complement to BC635/638/640 TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage : BC635 : BC637 : BC639 : BC635 : BC637 : BC639 : BC635 : BC637 : BC639 Symbol VCER Rating 45 60 100 45 60 100 45 60 80 5 1 1.5 100 1 150 -65 ~ 150 Unit V V V V V V V V V V A A mA W C C
VCES
Collector Emitter Voltage
VCEO
Emitter Base Voltage Collector Current Peak Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature * PW=5ms, Duty Cycle=10%
VEBO IC ICP IB PC TJ T STG
1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage : BC635 : BC736 : BC639 Collector Cut-off Current Emitter Cut-off Current DC Current Gain :BC635 : BC637/BC639 Collector Emitter Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Symbol BVCEO Test Conditions IC=10mA, IB=0 45 60 80 ICBO IEBO hFE VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz 0.1 0.1 25 40 40 25 250 160 0.5 1 100 V V MHz V V V A A Min Typ Max Unit
VCE(sat) VBE(on) fT
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC635/637/639
NPN EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC636/638/640
PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
* Complement to BC635/637/639 TO-92
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage : BC636 : BC638 : BC640 : BC636 : BC638 : BC640 : BC636 : BC638 : BC640 Symbol VCER Rating -45 -60 -100 -45 -60 -100 -45 -60 -80 -5 -1 -1.5 -100 1 150 -65 ~ 150 Unit V V V V V V V V V V A A mA W C C
VCES
Collector Emitter Voltage
VCEO
Emitter Base Voltage Collector Current Peak Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature
VEBO IC ICP IB PC TJ T STG
1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage : BC636 : BC638 : BC640 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : BC635 : BC637/BC639 Collector Emitter Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Symbol BVCEO Test Conditions IC= -10mA, IB=0 -45 -60 -80 ICBO IEBO hFE VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA IC= -500mA, IB= -50mA VCE= -2V, IC= -500mA VCE= -5V, IC= -10mA, f=50MHz -0.1 -0.1 25 40 40 25 250 160 -0.5 -1 100 V V MHz Min Typ Max Unit V V V A A
VCE (sat) VBE (on) fT
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC636/638/640
PNP EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC807-16 / BC807-25 / BC807-40
Discrete POWER & Signal Technologies
BC807-16 BC807-25 BC807-40
C
E
SOT-23
Mark: 5A. / 5B. / 5C.
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at currents to 1.0 A. Sourced from Process 78.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
45 50 5.0 1.2 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
*BC807-16 / -25 / -40 350 2.8 357
Units
mW mW/C C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
a 1997 Fairchild Semiconductor Corporation
BC807-16 / BC807-25 / BC807-40
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 20 V VCB = 20 V, TA = 150C 45 50 5.0 100 5.0 V V V nA A
ON CHARACTERISTICS
hFE DC Current Gain IC = 100 mA, VCE = 1.0 V - 16 - 25 - 40 IC = 500 mA, VCE = 1.0 V IC = 500 mA, IB = 50 mA IC = 500 mA, VCE = 1.0 V 100 160 250 40 250 400 600 0.7 1.2 V V
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
Typical Characteristics
vs Collector Current
400
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
h FE - TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation Voltage vs Collector Current
0.6 0.5 0.4 0.3 0.2
125 C
V CE = 5V
300
125 C
= 10
- 40 C 25 C
200 100 0 0.01
- 40 C
25 C
0.1 0 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 1.5
0.1 I C - COLLECTOR CURRENT (A)
1
BC807-16 / BC807-25 / BC807-40
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V - BASE-EMITTER ON VOLTAGE (V) BE(ON)
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1
= 10
Base-Emitter ON Voltage vs Collector Current
1
0.8
0.8
- 40 C 25 C 125 C
- 40 C 25 C
0.6
0.6
125 C
0.4
0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 1000
VCE = 5V
1 10 100 I C - COLLECTOR CURRENT (mA) 1000
0.2
C OBO - COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) 100
V CB = 40V
Collector-Base Capacitance vs Collector-Base Voltage
40
F = 1.0 MHz
30
10
1
20
0.1
10
25
50 75 100 125 TA - AMBIENT TEMPERATURE (C)
150
0 0 4 8 12 Pr 78 16 20 24 28
V CB - COLLECTOR-BASE VOLTAGE (V)
h FE - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
V CE = 10V
P D - POWER DISSIPATION (mW)
Power Dissipation vs Ambient Temperature
350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
250 200 150 100 50 0
SOT-23
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC807/BC808
PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
* Suitable for AF-Driver stages and low power output stages * Complement to BC817/BC818 SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector Emitter Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature : BC807 : BC808 : BC807 : BC808 Symbol VCES VCEO VEBO IC PC TJ T STG Rating -50 -30 -45 -25 -5 -800 -310 150 -65 ~ 150 Unit V V V V V mA mW C C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage : BC807 : BC808 Collector-Emitter Breakdown Voltage : BC807 : BC808 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector-Base Capacitance Symbol BVCEO Test Conditions IC= -10mA, IB=0 -45 -25 BVCES IC= -0.1mA, IB=0 -50 -30 -5 -100 -100 630 -0.7 -1.2 100 12 V V V nA nA V V Min Typ Max Unit
BVEBO ICES IEBO hFE1 hFE2 VCE (sat) VBE (on) fT CCBO
IE= -0.1mA, IC=0 VCE= -25V, IB=0 VEB= -4V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA f=50MHz VCB= -10V, f=1MHz
100 60
V V MHz pF
hFE CLASSIFICATION
Classification hFE1 hFE2 16 100-250 6025 160-400 10040 250-630 170-
MARKING CODE
TYPE MARKING 807-16 9FA 807-25 9FB 807-40 9FC 808-16 9GA 808-25 9GB 808-40 9GC
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC807/BC808
PNP EPITAXIAL SILICON TRANSISTOR
BC807/BC808
PNP EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC817-25 / BC817-40
Discrete POWER & Signal Technologies
BC817-25 BC817-40
C
E
SOT-23
Mark: 6B. / 6C.
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
45 50 5.0 1.5 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
*BC817-25 / BC817-40 350 2.8 357
Units
mW mW/C C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
a 1997 Fairchild Semiconductor Corporation
BC817-25 / BC817-40
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 20 V VCB = 20 V, TA = 150C 45 50 5.0 100 5.0 V V V nA A
ON CHARACTERISTICS
hFE DC Current Gain IC = 100 mA, VCE = 1.0 V - 25 - 40 IC = 500 mA, VCE = 1.0 V IC = 500 mA, IB = 50 mA IC = 500 mA, VCE = 1.0 V 160 250 40 400 600 0.7 1.2 V V
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
Typical Characteristics
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
V CE = 5V
125 C 25 C - 40 C
Collector-Emitter Saturation Voltage vs Collector Current
0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 I
C
500 400 300 200 100 0 0.001
= 10
125 C
25C
- 40 C
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
2
0.1 1 - COLLECTOR CURRENT (A)
3
BC817-25 / BC817-40
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
VBE(ON) BASE-EMITTER ON VOLTAGE (V) -
1
VBE(ON) BASE-EMITTER ON VOLTAGE (V) -
Base-Emitter ON Voltage vs Collector Current
Base-Emitter ON Voltage vs Collector Current
1
0.8
- 40 C 25C
0.8
- 40 C 25C
0.6
125 C
0.6
125 C
0.4
VCE = 5V
0.01 0.1 I C - COLLECTOR CURRENT (A)
P
0.4
VCE = 5V
0.01 0.1 I C - COLLECTOR CURRENT (A)
P 38
0.2 0.001
1
0.2 0.001
1
C OBO - COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current vs Ambient Temperature
I CBO COLLECTOR CURRENT (nA) 100
VCB = 40V
Collector-Base Capacitance vs Collector-Base Voltage
40
10
30
1
20
0.1
10
25
50 75 100 125 T A - AMBIENT TEMPERATURE (C)
150
0 0 4 8 12 Pr 38 16 20 24 28
V CB - COLLECTOR-BASE VOLTAGE (V)
h FE - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
V CE = 10V
P D - POWER DISSIPATION (mW)
Power Dissipation vs Ambient Temperature
350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
500 400 300 200 100 0
SOT-23
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC817/BC818
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
SWITCHING AND AMPLIFIER APPLICATIONS
* Suitable for AF-Driver stages and low power output stages * Complement to BC807/BC808
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector Emitter Voltage : BC817 : BC818 Collector Emitter Voltage : BC817 : BC818 Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC PC TJ T STG Rating 50 30 45 25 5 800 310 150 -65 ~ 150 Unit V V V V V mA mW C C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage : BC817 : BC818 Collector-Emitter Breakdown Voltage : BC817 : BC818 Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector-Base Capacitance Symbol BVCEO Test Conditions IC=10mA, IB=0 45 25 BVCES IC=0.1mA, IB=0 50 30 5 100 100 630 0.7 1.2 100 12 V V V nA nA V V Min Typ Max Unit
BVEBO ICES IEBO hFE1 hFE2 VCE (sat) VBE (on) fT CCBO
IE=0.1mA, IC=0 VCE=25V, IB=0 VEB=4V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=300mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=5V, IC=10mA f=50MHz VCB=10V, f=1MHz
100 60
V V MHz pF
hFE CLASSIFICATION
Classification hFE1 hFE2 16 100-250 6025 160-400 10040 250-630 170-
MARKING CODE
TYPE MARKING 817-16 8FA 817-25 8FB 817-40 8FC 818-16 8GA 818-25 8GB 818-40 8GC
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC846/847/848/849/850
SWITCHING AND AMPLIFIER APPLICATIONS
* Suitable for automatic insertion in thick and thin-film circuits * LOW NOISE: BC849, BC850 * Complement to BC856 ... BC860
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector Base Voltage : BC846 : BC847/850 : BC848/849 Collector Emitter Voltage : BC846 : BC847/850 : BC848/849 Emitter-Base Voltage : BC846/847 : BC848/849/850 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO 80 50 30 VCEO 65 45 30 VEBO 6 5 100 310 150 -65 ~ 150 V V mA mW C C V V V V V V Rating Unit
IC PC TJ T STG
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector Cut-off Current DC Current Gain Collector Emitter Saturation Voltage Collector Base Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC846/847/848 : BC849/850 : BC849 : BC850 Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT CCBO CEBO NF NF Test Conditions VCB=30V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA f=100MHz VCB=10V, f=1MHz VEB=0.5V, f=1MHz VCE=5V, IC=200A f=1KHz, RG=2K VCE=5V, IC=200A RG=2K f=30~15000Hz Min Typ Max 15 800 250 600 Unit nA mV mV mV mV mV mV MHz pF pF dB dB dB dB
110 90 200 700 900 660 300 3.5 9 2 1.2 1.4 1.4
580
700 720
6 10 4 4 3
hFE CLASSIFICATION
Classification hFE A 110-220 B 200-450 C 420-800
MARKING CODE
TYPE MARK 846A 8AA 846B 8AB 846C 8AC 847A 8BA 847B 8BB 847C 8BC 848A 8CA 848B 8CB 848C 8CC 849A 8DA 849B 8DB 849C 8DC 850A 8EA 850B 8EB 850C 8EC
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC846/847/848/849/850
NPN EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC856/857/858/859/860
SWITCHING AND AMPLIFIER APPLICATIONS
* Suitable for automatic insertion in thick and thin-film circuits * LOW NOISE: BC859, BC860 * Complement to BC846 ... BC850
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage : BC856 : BC857/860 : BC858/859 Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859 Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO -80 -50 -30 VCEO -65 -45 -30 -5 -100 310 150 -65 ~ 150 V V V V mA mW C C V V V Rating Unit
VEBO IC PC TJ T STG
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector-Base Capacitance Noise Figure : BC856/857/858 : BC859/860 : BC859 : BC860 Symbol ICBO hFE VCE (sat) VBE (sat) VBE (on) fT CCBO NF NF Test Conditions VCB= -30V, IE=0 VCE= -5V, IC= -2mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA VCE= -5V, IC= -10mA f=100MHz VCB= -10V, f=1MHz VCE= -5V, IC= -200A f=1KHz, RG=2K VCE= -5V, IC= -200A RG=2K f=30~15000Hz Min Typ Max -15 800 -300 -650 Unit nA mV mV mV mV mV mV MHz pF dB dB dB dB
110 -90 -250 -700 -900 -660 150
-600
-750 -800
2 1 1.2 1.2
6 10 4 4 2
hFE CLASSIFICATION
Classification hFE A 110-220 B 200-450 C 420-800
MARKING CODE
TYPE MARK 856A 9AA 856B 9AB 856C 9AC 857A 9BA 857B 9BB 857C 9BC 858A 9CA 858B 9CB 858C 9CC 859A 9DA 859B 9DB 859C 9DC 860A 9EA 860B 9EB 860C 9EC
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BC856/857/858/859/860
PNP EPITAXIAL SILICON TRANSISTOR
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BC857A / BC857B / BC857C
BC857A BC857B BC857C
C
E
SOT-23
Mark: 3E / 3F / 3G
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
45 50 5.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
*BC857A / B / C 350 2.8 357
Units
mW mW/C C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
a 1997 Fairchild Semiconductor Corporation
BC857A / BC857B / BC857C
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 1.0 A, IC = 0 VCB = 30 V VCB = 30 V, TA = 150C 45 50 5.0 15 4.0 V V V nA A
ON CHARACTERISTICS
hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V BC857A BC857B BC857C IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V 125 220 420 250 475 800 0.3 0.65 0.75 0.82
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
0.6
V V V V
SMALL SIGNAL CHARACTERISTICS
fT Cobo NF Current Gain - Bandwidth Product Output Capacitance Noise Figure IC = 10 mA, VCE = 5.0, f = 100 mHz VCB = 10 V, f = 1.0 MHz IC = 0.2 mA, VCE = 5.0, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 100 4.5 10 MHz pF dB
Typical Characteristics
VCESAT- COLLECTOR EMITTER VOLTAGE (V)
hFE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
500
V CE = 5V
Collector-Emitter Saturation Voltage vs Collector Current
0.3 0.25 0.2 0.15
25 C
400 300
125 C
= 10
25 C
200 100 0 0.01
- 40 C
0.1 0.05 0 0.1
125 C - 40 C
0.1 1 10 100 IC - COLLECTOR CURRENT (mA)
1 10 100 I C - COLLECTOR CURRENT (mA)
P 68
300
BC857A / BC857B / BC857C
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1.2 1 0.8 0.6 0.4 0.2 0 0.1
VBEON - BASE EMITTER ON VOLTAGE (V)
VBESAT- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
= 10
Base Emitter ON Voltage vs Collector Current
1 0.8 0.6 0.4 0.2 0 0.1 V CE = 5V
- 40 C 25 C 125 C
- 40 C
25 C
125 C
1 10 100 I C - COLLECTOR CURRENT (mA)
300
1 10 I C - COLLECTOR CURRENT (mA)
100 200
Collector-Cutoff Current vs. Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) V CB = 50V 10
BV CER - BREAKDOWN VOLTAGE (V)
100
Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base
95 90
1
85
80
0.1
75
0.01 25
50 75 100 T A - AMBIENT TEMPERATURE ( C)
125
70 0.1
1
10
100
1000
RESISTANCE (k )
VCE - COLLECTOR-EMITTER VOLTAGE (V)
Collector Saturation Region
4
Input and Output Capacitance vs Reverse Voltage
100
Ta = 25C
3
f = 1.0 MHz CAPACITANCE (pF)
2
Ic =
100 uA
50 mA
300 mA
10
Cib Cob
1
0 100 300 700 2000 4000
I B - BASE CURRENT (uA)
0.1
1
10
100
Vce- COLLECTOR VOLTAGE(V)
BC857A / BC857B / BC857C
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
f T - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
40
Power Dissipation vs Ambient Temperature
350 P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
Vce = 5V
30
SOT-23
20
10
0 1 10 P 68 20 50 100 150
I C- COLLECTOR CURRENT (mA)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCP52
Discrete POWER & Signal Technologies
BCP52
C
E C B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 78.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
60 60 5.0 1.2 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
BCP52 1.5 12 83.3
Units
W mW/C C/W
(c)1997 Fairchild Semiconductor Corporation
BCP52
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 125C VEB = 5.0 V, IC = 0 60 60 5.0 100 10 10 V V V nA A A
ON CHARACTERISTICS
hFE DC Current Gain IC = 5.0 mA, VCE = 2.0 V IC = 150 mA, VCE = 2.0 V IC = 500 mA, VCE = 2.0 V IC = 500 mA, I B = 50 mA IC = 500 mA, VCE = 2.0 V 25 40 25 250 0.5 1.0 V V
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
Typical Characteristics
vs Collector Current
400
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
h FE - TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation Voltage vs Collector Current
0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 0.1 I C - COLLECTOR CURRENT (A)
P8
V CE = 5V
300
125 C
= 10
- 40 C 25 C
200
- 40 C
25 C
100
125 C
0 0.01
0.1 I C - COLLECTOR CURRENT (A)
1
1
1.5
BCP52
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V - BASE-EMITTER ON VOLTAGE (V) BE(ON)
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1 = 10
Base-Emitter ON Voltage vs Collector Current
1
0.8
0.8
- 40 C 25 C 125 C
- 40 C 25 C
0.6
0.6
125 C
0.4
0.4 1 10 100 I C - COLLECTOR CURRENT (mA)
P 78
VCE = 5V
1 I
C
1000
0.2
10 100 - COLLECTOR CURRENT (mA)
P8
1000
C OBO - COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) 100 VCB = 40V 10
Collector-Base Capacitance vs Collector-Base Voltage
40
F = 1.0 MHz
30
1
20
0.1
10
25
50 75 100 125 TA - AMBIENT TEMPERATURE (C)
P8
150
0 0 4 8 12 Pr 78 16 20 24 28
V CB- COLLECTOR-BASE VOLTAGE (V)
h FE - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
250 V CE = 10V 200 150 100 50 0
PD - POWER DISSIPATION (W) 1.5 1.25
Power Dissipation vs Ambient Temperature
SOT-223
1 0.75 0.5 0.25 0
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
0
25
50 75 100 TEMPERATURE (o C)
125
150
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCP54
Discrete POWER & Signal Technologies
BCP54
C
E C B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
45 45 5.0 1.5 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
BCP54 1.5 12 83.3
Units
W mW/C C/W
a 1997 Fairchild Semiconductor Corporation
BCP54
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 125C VEB = 5.0 V, IC = 0 45 45 5.0 100 10 10 V V V nA A A
ON CHARACTERISTICS
hFE DC Current Gain IC = 5.0 mA, VCE = 2.0 V IC = 150 mA, VCE = 2.0 V IC = 500 mA, VCE = 2.0 V IC = 500 mA, IB = 50 mA IC = 500 mA, VCE = 2.0 V 25 40 25 250 0.5 1.0 V V
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter On Voltage
Typical Characteristics
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
V CE = 5V
125 C 25 C - 40 C
Collector-Emitter Saturation Voltage vs Collector Current
0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 I
C
500 400 300 200 100 0 0.001
= 10
125 C
25C
- 40 C
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
2
0.1 1 - COLLECTOR CURRENT (A)
3
BCP54
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
VBE(ON) BASE-EMITTER ON VOLTAGE (V) -
1
VBE(ON) BASE-EMITTER ON VOLTAGE (V) -
Base-Emitter ON Voltage vs Collector Current
Base-Emitter ON Voltage vs Collector Current
1
0.8
- 40 C 25C
0.8
- 40 C 25C
0.6
125 C
0.6
125 C
0.4
VCE = 5V
0.01 0.1 I C - COLLECTOR CURRENT (A)
P
0.4
VCE = 5V
0.01 0.1 I C - COLLECTOR CURRENT (A)
P 38
0.2 0.001
1
0.2 0.001
1
C OBO - COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current vs Ambient Temperature
I CBO COLLECTOR CURRENT (nA) 100
VCB = 40V
Collector-Base Capacitance vs Collector-Base Voltage
40
10
30
1
20
0.1
10
25
50 75 100 125 T A - AMBIENT TEMPERATURE (C)
150
0 0 4 8 12 Pr 38 16 20 24 28
V CB - COLLECTOR-BASE VOLTAGE (V)
h FE - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
500
V CE = 10V
PD - POWER DISSIPATION (W) 1.5 1.25
Power Dissipation vs Ambient Temperature
400 300 200 100 0
SOT-223
1 0.75 0.5 0.25 0
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
0
25
50 75 100 TEMPERATURE (o C)
125
150
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCV26
Discrete POWER & Signal Technologies
BCV26
C
E
SOT-23
Mark: FD
B
PNP Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
30 40 10 1.2 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
*BCV26 350 2.8 357
Units
mW mW/C C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
a 1997 Fairchild Semiconductor Corporation
BCV26
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 100 nA, IC = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 40 10 0.1 0.1 V V V A A
ON CHARACTERISTICS
hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, IB = 0.1 mA 4,000 10,000 20,000 1.0 1.5 V V
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
fT CC Current Gain - Bandwidth Product Collector Capacitance IC = 30 mA, VCE = 5.0 V, f = 100 MHz VCB = 30 V, IE = 0, f = 1.0 MHz 220 3.5 MHz pF
Typical Characteristics
50 40 30 20 10 0 0.01
- 40 C
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN (K)
Typical Pulsed Current Gain vs Collector Current
VCE = 5V
Collector-Emitter Saturation Voltage vs Collector Current
1.6 = 1000 1.2
- 40 C
125 C
0.8
25 C 125 C
25 C
0.4
0.1 I C - COLLECTOR CURRENT (A)
1
0 0.001
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
BCV26
PNP Darlington Transistor
(continued)
Typical Characteristics
(continued)
VBEON - BASE EMITTER ON VOLTAGE (V)
VBESAT- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
2 = 1000
- 40 C 25 C 125 C
Base Emitter ON Voltage vs Collector Current
2 1.6 1.2
125 C
1.6 1.2 0.8 0.4 0 0.001
- 40 C 25 C
0.8 0.4 0 0.001 V CE = 5V
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
Collector-Cutoff Current vs. Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) 100 V 10 CAPACITANCE (pF)
CB
Input and Output Capacitance vs Reverse Bias Voltage
16 f = 1.0 MHz 12
= 15V
1
8 C ib 4 C ob
0.1
0.01 25
50 75 100 TA - AMBIENT TEMPERATURE ( C)
125
0 0.1
1 10 REVERSE VOLTAGE (V)
100
Power Dissipation vs Ambient Temperature
350 P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
SOT-23
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCV27
Discrete POWER & Signal Technologies
BCV27
C
E
SOT-23
Mark: FF
B
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
30 40 10 1.2 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
*BCV27 350 2.8 357
Units
mW mW/C C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
(c)1997 Fairchild Semiconductor Corporation
BCV27
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, I E = 0 IE = 100 nA, IC = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 40 10 0.1 0.1 V V V A A
ON CHARACTERISTICS
hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, I B = 0.1 mA IC = 100 mA, I B = 0.1 mA 4,000 10,000 20,000 1.0 1.5 V V
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
fT CC Current Gain - Bandwidth Product Collector Capacitance IC = 30 mA, VCE = 5.0 V, f = 100 MHz VCB = 30 V, IE = 0, f = 1.0 MHz 220 3.5 MHz pF
Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
250 200 VCE = 5V 150
25 C
h FE - TYPICAL PULSED CURRENT GAIN (K)
VCESAT- COLLECTOR EMITTER VOLTAGE (V)
Collector-Emitter Saturation Voltage vs Collector Current
1.6 = 1000 1.2
- 40 C 25C 125 C
125 C
0.8
100
- 40 C
50 0 0.001
0.4
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
0
1
10 100 I C - COLLECTOR CURRENT (mA)
P0
1000
BCV27
NPN Darlington Transistor
(continued)
Typical Characteristics
(continued)
VBEON - BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
2 1.6 1.2 0.8 0.4 0 = 1000
- 40 C 25 C 125 C
Base Emitter ON Voltage vs Collector Current
2 1.6 1.2
125 C - 40 C 25 C
0.8 0.4 0 VCE = 5V
1
10 100 I C - COLLECTOR CURRENT (mA)
P 05
1000
1
10 100 I C - COLLECTOR CURRENT (mA)
P0
1000
100
VCB = 30V
BVCER - BREAKDOWN VOLTAGE (V)
Collector-Cutoff Current vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA)
Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base
62.5 62 61.5 61 60.5 60 59.5 0.1
10
1
0.1
0.01 25
50 75 100 T A- AMBIENT TEMPERATURE ( C)
P0
125
1
RESISTANCE (k )
10
100
1000
Input and Output Capacitance vs Reverse Voltage
f = 1.0 MHz
20
f T - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
50
Vce = 5V
40
CAPACITANCE (pF)
10
30
Cib
5
20
Cob
10
2 0.1
1
10
100
0 1 10 P 05 20 50 100 150
Vce - COLLECTOR VOLTAGE(V)
P0
IC - COLLECTOR CURRENT (mA)
BCV27
NPN Darlington Transistor
(continued)
Typical Characteristics
(continued)
Power Dissipation vs Ambient Temperature
350 P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE (o C) 125 150
SOT-23
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCW29
GENERAL PURPOSE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature * Refer to KST5088 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -30 -20 -5.0 -100 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Noise Figures Symbol BVCBO BVCEO BVCES BVEBO ICBO hFE VCE(sat) VBE(sat) COB NF Test Conditions IC= -10A, IE=0 IC= -2mA, IB=0 IC= -100A, VEB=0 IE= -10A, IC=0 VCB= -20V, IE=0 VCE= -5V, IC= -2mA IC= -10mA, IB= -0.5mA VCE= -5V, IC= -2mA VCB= -10V, IE=0 f=1MHz VCE= -5V, IC=0.2mA RG=2K, f=1KHz Min -30 -20 -30 -5 120 -0.6 -100 260 -0.3 -0.75 7 10 Typ Max Unit V V V V nA V V pF dB
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCW30
Discrete POWER & Signal Technologies
BCW30
C
E B
SOT-23
Mark: C2
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
32 32 5.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
*BCW30 350 2.8 357
Units
mW mW/C C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
(c) 1997 Fairchild Semiconductor Corporation
W30, Rev B
BCW30
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CBO V(BR)CEO V(BR)CES V(BR)EBO ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 A, IE = 0 IC = 2.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 32 V, IE = 0 VCB = 32 V, IE = 0, TA = +100 C 32 32 32 5.0 100 10 V V V V nA A
ON CHARACTERISTICS
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA IC = 10 mA, IB = 0.5 mA VCE = 5.0 V, IC = 2.0 mA 0.60 215 500 0.30 0.75 V V
SMALL SIGNAL CHARACTERISTICS
NF Noise Figure VCE = 5.0 V, IC = 200 A, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 10 dB
BCW31
GENERAL PURPOSE TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KST5088 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating 30 20 5 100 350 150 Unit V V V mA mW
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Noise Figures Symbol BVCBO BVCEO BVEBO hFE VCE (sat) VBE (on) COB NF Test Conditions IC=10}, IE=0 IC=2mA, IB=0 IE=10}, IC=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA VCE=5V, IC=2mA VCB=10V, IE=0 f=1MHz VCE=5V, IC=0.2mA RG=2, f=1KHz Min 30 20 5 110 0.55 Typ Max Unit V V V 220 0.25 0.7 4 10 V V pF dB
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCW60A/B/C/D
GENERAL PURPOSE TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol VCBO VCEO VEBO IC PC T STG Rating 32 32 5 100 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain-Bandwidth Product Noise Figure Turn On Time Turn Off Time Symbol BVCEO BVEBO ICES IEBO hFE Test Conditions IC=2mA, IB=0 IE=1A, IC=0 VCB=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10A Min 32 5 20 20 20 40 100 120 180 250 380 60 70 90 100 Max Unit V V nA nA
VCE=5V, IC=2mA
220 310 460 630
VCE=1V, IC=50mA
VCE(sat) VBE(sat) VBE(sat) COB fT NF tON tOFF
IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA VCE=5V, IC=2mA VCB=10V, IE=0 f=1MHz IC=10mA, VCE=5V IC=0.2mA, VCE=5V RG=2K, f=1KHz IC=10mA, IB1=1mA VBB=3.6V, IB2=1mA R1=R2=5K,RL=990
0.7 0.6 0.55
0.55 0.35 1.05 0.85 0.75 4.5
V V V V V pF MHz
125 6 150 800
dB ns ns
MARKING CODE
TYPE MARK. BCW60A AA BCW60B AB BCW60C AC BCW60D AD
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCW61A/B/C/D
GENERAL PURPOSE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KS5086 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -32 -32 -5.0 -100 350 -55 ~ 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Noise Figure Turn On Time Turn Off Time Symbol BVCEO BVEBO ICES hFE Test Conditions IC= -2mA, IB=0 IE= -1A, IC=0 VCB= -32V, VBE=0 VCE= -5V, IC= -10A Min -32 -5 -20 20 40 100 120 140 250 380 60 80 100 100 Max Unit V V nA
VCE= -5V, IC= -2mA
220 310 460 630
VCE= -5V, IC= -50mA
VCE (sat) VBE (sat) VBE (on) COB NF tON tOFF
IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA VCB= -10V, IE=0 f=1MHz IC= -0.2mA, VCE= -5V RG=20K, f=1KHz IC= -10mA, IB1= -1mA VBB= -3.6V, IB2= -1mA R1=R2=50K, RL=990
0.68 0.6 0.6
-0.55 -0.25 1.05 0.85 0.75 6 6 150 800
V V V V V pF dB ns ns
Rev. B
(c)1999 Fairchild Semiconductor Corporation
BCW61A/B/C/D
MARKING CODE
TYPE MARK. BCW61A BA BCW61B BB
PNP EPITAXIAL SILICON TRANSISTOR
BCW61C BC BCW61D BD
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCW65C
Discrete POWER & Signal Technologies
BCW65C
C
E
SOT-23
Mark: ED
B
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
32 60 5.0 1.0 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
*BCW65C 350 2.8 357
Units
mW mW/C C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
a 1997 Fairchild Semiconductor Corporation
BCW65C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICES IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 32 V, IE = 0 VCB = 32 V, IE = 0, TA = 150C VEB = 4.0 V, IC = 0 32 60 5.0 20 20 20 V V V nA A nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 100 A, VCE = 10 V IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V IC = 100 mA, IB = 10 mA IC = 500 mA, B = 50 mA IC = 500 mA, IB = 50 mA 80 180 250 50 630 0.3 0.7 2.0 V V
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo NF Current Gain - Bandwidth Product Output Capacitance Input Capacitance Noise Figure IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 0.2 mA, VCE = 5.0, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz 100 12 80 10 MHz pF pF dB
Typical Characteristics
500
VCE = 5V
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
400 300 200
25 C 125 C
Collector-Emitter Saturation Voltage vs Collector Current
0.4 = 10 0.3
125 C 25 C
0.2
100
- 40 C
0.1
- 40 C
0 0.1
0.3
1 3 10 30 100 I C - COLLECTOR CURRENT (mA)
300
1
10 100 I C - COLLECTOR CURRENT (mA)
500
BCW65C
NPN General Purpose Amplifier
(continued)
Typical Characteristics
V BE(ON) BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1
= 10
Base-Emitter ON Voltage vs Collector Current
1 VCE = 5V 0.8
- 40 C 25 C
0.8
- 40 C 25 C
0.6
0.6
125 C
125 C
0.4
0.4 1 IC 10 100 - COLLECTOR CURRENT (mA) 500
0.2 0.1
1 10 I C - COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current vs Ambient Temperature
I CBO- COLLECTOR CURRENT (nA) 500
Emitter Transition and Output Capacitance vs Reverse Bias Voltage
20 CAPACITANCE (pF) 16 12
C te
100 10 1 0.1
V
CB
= 40V
f = 1 MHz
8 4
C ob
25
50 75 100 125 T A - AMBIENT TEMPERATURE ( C)
150
0.1
1 10 REVERSE BIAS VOLTAGE (V)
100
Power Dissipation vs Ambient Temperature
350 P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
SOT-23
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCW68G
Discrete POWER & Signal Technologies
BCW68G
C
E
SOT-23
Mark: DG
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
45 60 5.0 800 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
*BCW68C 350 2.8 357
Units
mW mW/C C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
a 1997 Fairchild Semiconductor Corporation
BCW68G
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCE = 45 V VCE = 45 V, TA = 150 C VEB = 4.0 V 45 60 60 5.0 20 10 20 V V V V nA A nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 300 mA, VCE = 1.0 V IC = 300 mA, IB = 30 mA IC = 500 mA, IB = 50 mA 120 160 60 400 1.5 2.0 V V
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo NF Current Gain - Bandwidth Product Ouput Capacitance Input Capacitance Noise Figure IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IE = 0, f = 1.0 MHz IC = 0.2 mA V, VCE = 5.0 V, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz 100 18 105 10 MHz pF pF dB
Typical Characteristics
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
hFE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
500
VCE = 5V
Collector-Emitter Saturation Voltage vs Collector Current
0.5 = 10 0.4 0.3
25 C
400 300 200 100 0 0.1
125 C
25 C
0.2 0.1 0
125 C - 40 C
- 40 C
0.3
1 3 10 30 100 I C - COLLECTOR CURRENT (mA)
300
1
10 100 I C - COLLECTOR CURRENT (mA)
500
BCW68G
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
VBEON - BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1 0.8 0.6
125 C - 40 C 25 C
Base Emitter ON Voltage vs Collector Current
1 0.8
- 40 C
0.6 0.4 0.2 0 0.1
25 C 125 C
0.4 = 10 0.2 0
VCE = 5V
1
10 100 I C - COLLECTOR CURRENT (mA)
500
1 10 I C - COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current vs. Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) 100 V CB = 35V 10 CAPACITANCE (pF) 16 12 20
Input and Output Capacitance vs Reverse Bias Voltage
1
C ib
8 4 0 0.1
C ob
0.1
0.01 25
50 75 100 TA - AMBIENT TEMPERATURE ( C)
125
1 10 REVERSE BIAS VOLTAGE (V)
50
Power Dissipation vs Ambient Temperature
350 P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150
SOT-23
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCW71
GENERAL PURPOSE TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KST2222 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating 50 45 5 100 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figures Symbol BVCBO BVCEO BVCES BVEBO ICBO hFE VCE (sat) VBE (sat) VBE (on) fT COB NF Test Conditions IC=10A, IE=0 IC=2mA, IB=0 IC=2mA, VEB=0 IE=10A, IC=0 VCB=20V, IE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA IC=50mA, IB=2.5mA IC=2mA, VCE=5V VCE=5V, IC=10mA f=35MHz VCB=10V, IE=0 f=1MHz VCE=5V, IC=2.0mA RG=2K, f=1KHz Min 50 45 45 5 110 0.21 0.85 0.6 300 4 10 0.75 100 220 0.25 Typ Max Unit V V V V nA V V V V MHz pF dB
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCX70G
GENERAL PURPOSE TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KS5088 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating 45 45 5 200 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time Symbol BVCEO BVEBO ICES IEBO hFE VCE (sat) VBE (sat) VBE (on) fT COB NF T ON T OFF Test Conditions IC=2mA, IB=0 IE=1A, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=2mA VCE=1V, IC=50mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=2mA, VCE=5V VCE=5V, IC=10mA VCB=10V, IE=0 f=1MHz IC=0.2mA, VCE=5V f=1KHz, RS=2K IC=10mA, IB1=1mA IB2=1mA, VBB=3.6V RL=990 R1=R2=5K Min 45 5 20 20 220 0.35 0.55 0.85 1.05 0.75 Max Unit V V nA nA
120 60
0.6 0.7 0.55 125
V V V V V MHz pF dB ns ns
4.5 6 150 800
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCX70H
GENERAL PURPOSE TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KS3904 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating 45 45 5 200 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES IEBO hFE Test Conditions IC=2.0mA, IB=0 IE=1.0A, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10A VCE=5V, IC=2.0mA VCE=1V, IC=50mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=2.0mA, VCE=5V IC=10mA, VCE=5V VCE=10V, IE=0 f=1MHz VCE=5V, IC=0.2mA RS=2K, f=1KHz IC=10mA, IB1=1.0mA VBB=3.6V, IB2=1.0mA R1=R2=5K, RL=990 Min 45 5 20 20 120 180 70 310 0.35 0.55 0.85 1.05 0.75 V V V V V MHz pF dB ns ns Max Unit V V nA nA
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time
VCE (sat) VBE (sat) VBE (on) fT COB NF T ON T OFF
0.6 0.7 0.55 125
4.5 6 150 800
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCX70J
GENERAL PURPOSE TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KS3904 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating 45 45 5 200 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES IEBO hFE Test Conditions IC=2.0mA, IB=0 IE=1.0A, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10A VCE=5V, IC=2.0mA VCE=1V, IC=50mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=2.0mA, VCE=5V IC=10mA, VCE=5V VCB=10V, IE=0 f=1MHz VCE=5V, IC=0.2mA RS=2K, f=1KHz IC=10mA, IB1=1.0mA VBB=3.6V, IB2=1.0mA R1=R2=5K, RL=990 Min 45 5 20 20 40 250 90 460 0.35 0.55 0.85 1.05 0.75 V V V V V MHz pF dB ns ns Max Unit V V nA nA
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time
VCE (sat) VBE (sat) VBE (on) fT COB NF T ON T OFF
0.6 0.7 0.55 125
4.5 6 150 800
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCX70K
GENERAL PURPOSE TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KS3904 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating 45 45 5 200 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES IEBO hFE Test Conditions IC=2.0mA, IB=0 IE=1.0A, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10A VCE=5V, IC=2.0mA VCE=1V, IC=50mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=2.0mA, VCE=5V IC=10mA, VCE=5V VCB=10V, IE=0 f=1MHz VCE=5V, IC=0.2mA RS=2K, f=1KHz IC=10mA, IB1=1.0mA VBB=3.6V, IB2=1.0mA R1=R2=5K, RL=990 Min 45 5 20 20 100 380 100 630 0.35 0.55 0.85 1.05 0.75 V V V V V MHz pF dB ns ns Max Unit V V nA nA
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time
VCE (sat) VBE (sat) VBE (on) fT COB NF T ON T OFF
0.6 0.7 0.55 125
4.5 6 150 800
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCX71G
GENERAL PURPOSE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KS5086 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -45 -45 -5.0 -100 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Noise Figure Turn On Time Turn Off Time Symbol BVCEO BVEBO ICES hFE VCE (sat) VBE (sat) VBE (on) COB NF T ON T OFF Test Conditions IC= -2mA, IB=0 IE= -1A, IC=0 VCE= -32V, VBE=0 VEB= -5V, IC= -2mA VCE= -1V, IC= -50A IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -2mA, VCE= -5V VCB= -10V, IE=0 f=1MHz IC=0.2mA, VCE=5V RS=2K, f=1KHz IC= -10mA, IB1= -1mA IB2= -1mA, VBB=3.6V RL=990 Min -45 -5 120 60 -20 220 -0.25 -0.55 -0.85 -1.05 -0.75 6 6 150 800 Max Unit V V nA
-0.6 -0.68 -0.6
V V V V V pF dB ns ns
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCX71H
GENERAL PURPOSE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KS5086 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -45 -45 -5 -100 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES hFE Test Conditions IC= -2mA, IB=0 IE= -1A, IC=0 VCE= -32V, VBE=0 VCE= -5V, IC= -10A VCE= -5V, IC= -2mA VCE= -1V, IC= -50mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -2mA, VCE= -5V VCB= -10V, IE=0 f=1MHz IC= -0.2mA, VCE= -5V f=1KHz, RS=2K IC= -10mA, IB1= -1mA IB2= -1mA, VBB= -3.6V RL=990 Min -45 -5 -20 30 140 80 310 -0.25 -0.55 -0.85 -1.05 -0.75 6 6 150 800 V V V V V pF dB ns ns Max Unit V V nA
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Noise Figure Turn On Time Turn Off Time
VCE (sat) VBE (sat) VBE (on) COB NF T ON T OFF
-0.6 -0.68 -0.6
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCX71J
GENERAL PURPOSE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KS5086 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -45 -45 -5 -100 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES hFE Test Conditions IC= -2mA, IB=0 IE= -1A, IC=0 VCE= -32V, VBE=0 VCE= -5V, IC= -10A VCE= -5V, IC= -2mA VCE= -1V, IC= -50mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -2mA, VCE= -5V VCB= -10V, IE=0 f=1MHz IC= -0.2mA, VCE= -5V f=1KHz, RS=2K IC= -10mA, IB1= -1mA IB2= -1mA, VBB= -3.6V RL=990 Min -45 -5 -20 40 250 100 460 -0.25 -0.55 -0.85 -1.05 -0.75 6 6 150 800 V V V V V pF dB ns ns Max Unit V V nA
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Noise Figure Turn On Time Turn Off Time
VCE (sat) VBE (sat) VDE (on) COB NF T ON T OFF
-0.6 -0.68 -0.6
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCX71K
GENERAL PURPOSE TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA=25C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature * Refer to KST5086 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating -45 -45 -5.0 -100 350 150 Unit V V V mA mW C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25C)
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES hFE Test Conditions IC= -2mA, IB=0 IE= -1A, IC=0 VCE= -32V, VBE=0 VCE= -5V, IC= -10A VCE= -5V, IC= -2mA VCE= -1V, IC= -50mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -2mA, VCE= -5V VCB= -10V, IE=0 f=1MHz IC= -0.2mA, VCE= -5V RS=2K, f=1KHz IC= -10mA, IB1= -1mA IB2= -1mA, VBB= -3.6V RL=990 Min -45 -5 -20 100 380 110 630 -0.25 -0.55 -0.85 -1.05 -0.75 6 6 150 800 V V V V V pF dB ns ns Max Unit V V nA
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Noise Figure Turn On Time Turn Off Time
VCE (sat) VBE (sat) VBE (on) COB NF T ON T OFF
-0.6 -0.68 -0.6
Rev. B
(c)1999 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
BCX79
Discrete POWER & Signal Technologies
BCX79
E
B
TO-92
C
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200A for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
45 45 5.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
BCX79 625 5.0 83.3 200
Units
mW mW/C C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
BCX79
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)EBO ICEX ICES IEBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, IB = 0 IE = 1.0 A, IC = 0 VCE = 45 V, VBE = 0.2 V, TA = +100 C VCE = 45 V, IE = 0, VCE = 45 V, IE = 0, TA = +125 C VEB = 4.0 V, IC = 0 45 5.0 20 10 2.5 20 V V A nA A nA
ON CHARACTERISTICS
hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 100 mA IC = 100 mA, IB = 2.5 mA IC = 100 mA, IB = 2.5 mA VCE = 5.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 100 mA 0.6 120 80 40 630 1,000 0.6 1.0 0.7 0.9 V V V V
VCE(sat) VBE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Ccb Ceb hie hoe NF Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Output Admittance Noise Figure VCB = 10 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz VCE = 5.0 V, IC = 0.2 mA, RS = 2.0 k, f = 1.0 kHz 1.6 4.5 15 8.5 100 6.0 pF pF k mhos dB
SWITCHING CHARACTERISTICS
ton ton toff toff Turn-on Time Turn-on Time Turn-off Time Turn-off Time VCC = 10 V, IC = 10 mA, VBB = 3.6 V, IB1 = IB2 = 1.0 mA VCC = 10 V, IC = 100 mA, VBB = 5.0 V, IB1 = IB2 = 10 mA VCC = 10 V, IC = 10 mA, VBB = 3.6 V, IB1 = IB2 = 1.0 mA VCC = 10 V, IC = 100 mA, VBB = 5.0 V, IB1 = IB2 = 10 mA 150 150 800 800 ns ns ns ns

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