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| BCV 62 PNP Silicon Double Transistor * To be used as a current mirror * Good thermal coupling and VBE matching * High current gain * Low collector-emitter saturation voltage C1 (2) C2 (1) 3 4 2 1 Tr.1 Tr.2 VPS05178 E1 (3) E2 (4) EHA00013 Type BCV 62A BCV 62B BCV 62C Maximum Ratings Parameter Marking 3Js 3Ks 3Ls 1 = C2 1 = C2 1 = C2 Pin Configuration 2 = C1 2 = C1 2 = C1 3 = E1 3 = E1 3 = E1 4 = E2 4 = E2 4 = E2 Package SOT-143 SOT-143 SOT-143 Symbol VCEO VCBO VEBS IC ICM IBM Ptot Tj Tstg Value 30 30 6 100 200 200 300 150 -65 ... 150 Unit V Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage DC collector current Peak collector current Base peak current (transistor T1) Total power dissipation, TS = 99 C Junction temperature Storage temperature mA mW C Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS 240 170 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 1 Oct-22-1999 BCV 62 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics of T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain 1) IC = 0.1 mA, VCE = 5 V DC current gain 1) IC = 2 mA, VCE = 5 V hFE hFE ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 30 30 6 100 - 15 5 - V nA A - BCV 62A BCV 62B BCV 62C 125 220 420 VCEsat 180 290 520 75 250 700 850 650 - 220 475 800 mV 300 650 750 820 Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBEsat VBE(ON) 600 - 1) Pulse test: t 300s, D = 2% 2 Oct-22-1999 BCV 62 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Base-emitter forward voltage IE = 10 A IE = 250 mA Matching of transistor T1 and transistor T2 at IE2 = 0.5mA and VCE1 = 5V TA = 25 C TA = 150 C Thermal coupling of transistor T1 and transistor T2 1) T1: VCE = 5V Maximum current of thermal stability of IC1 AC characteristics of transistor T1 Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 200 A, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm Unit max. V typ. VBES 0.4 IC1 / IC2 0.7 0.7 IE2 5 1.3 1.3 1.8 - mA fT Ccb Ceb F - 250 3 8 2 - MHz pF dB h11e h12e h21e h22e 100 - 4.5 2 30 900 - k 10-4 S 3 Oct-22-1999 BCV 62 Test circuit for current matching A C1 2 1 VCE1 ... T1 T2 E2 = constant 3 VCO 4 VCO EHN00003 Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1/IE2 = 1.3 A C1 2 1 VCE1 ... T1 T2 E2 = constant 3 RE 4 RE EHN00004 Note: BCV 62 with emitter resistors 4 Oct-22-1999 BCV 62 Total power dissipation Ptot = f (TA*;TS ) * Package mounted on epoxy BCV 62 EHP00939 Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 Ptot max 5 Ptot DC BCV 62 EHP00941 400 Ptot mW 300 D= tp T tp T 10 2 TS TA 5 200 10 1 100 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 0 0 50 100 C TA ; TS 150 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s tp 10 0 5 Oct-22-1999 |
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