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DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D087
BAT120 Schottky barrier double diodes
Product specification Supersedes data of 1998 Oct 30 2001 Aug 27
Philips Semiconductors
Product specification
Schottky barrier double diodes
FEATURES * Low switching losses * Capability of absorbing very high surge current * Fast recovery time * Guard ring protected * Plastic SMD package. APPLICATIONS * Low power switched-mode power supplies * Rectification * Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package
1 2 3
MSB002 - 1
BAT120
PINNING BAT120 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 BAT120A diode configuration (symbol).
page
4 1 3
2 n.c.
MGL171
age
4
page
4 1 3
2 n.c.
MGL172
Fig.3
Top view
BAT120C diode configuration (symbol).
MARKING TYPE NUMBER BAT120A BAT120C BAT120S MARKING CODE AT120A AT120C AT120S
page
4 1 2 n.c. 3
Fig.1
Simplified outline (SOT223) and pin configuration.
MGL173
Fig.4
BAT120S diode configuration (symbol).
2001 Aug 27
2
Philips Semiconductors
Product specification
Schottky barrier double diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF IFSM IRSM Tstg Tj Tamb continuous reverse voltage continuous forward current non-repetitive peak forward current non-repetitive peak reverse current storage temperature junction temperature operating ambient temperature tp < 10 ms; half sinewave; JEDEC method tp = 100 s - - - - -65 - -65 25 1 10 PARAMETER CONDITIONS MIN.
BAT120
MAX.
UNIT
V A A A C C C
0.5 +150 125 +125
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.5 IF = 100 mA IF = 1 A IR reverse current VR = 20 V; note 1; see Fig.6 VR = 25 V; note 1; see Fig.6 VR = 20 V; Tj = 100 C; note 1 Cd Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 100 UNIT K/W diode capacitance f = 1 MHz; VR = 4 V; see Fig.7 260 400 80 - - 100 300 450 500 1 10 - mV mV A mA mA pF PARAMETER CONDITIONS TYP. MAX. UNIT
2001 Aug 27
3
Philips Semiconductors
Product specification
Schottky barrier double diodes
GRAPHICAL DATA
BAT120
104 handbook, halfpage IF (mA) 103
MBK572
105 handbook, halfpage IR (A)
(1) (2) (3)
MHB970
104
102
(1) (2) (3) (4)
103
102
(4)
10 10
1
0
0.2
0.4
0.6
0.8 VF (V)
1.0
1
0
10
20
VR (V)
30
(1) Tamb = 125 C. (2) Tamb = 100 C.
(3) Tamb = 75 C. (4) Tamb = 25 C.
(1) Tamb = 125 C. (2) Tamb = 100 C.
(3) Tamb = 75 C. (4) Tamb = 25 C.
Fig.5
Forward current as a function of forward voltage; typical values.
Fig.6
Reverse current as a function of reverse voltage; typical values.
103 handbook, halfpage
MBK571
Cd (pF)
102
10
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 C.
Fig.7
Diode capacitance as a function of reverse voltage; typical values.
2001 Aug 27
4
Philips Semiconductors
Product specification
Schottky barrier double diodes
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BAT120
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ SC-73
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2001 Aug 27
5
Philips Semiconductors
Product specification
Schottky barrier double diodes
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BAT120
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Aug 27
6
Philips Semiconductors
Product specification
Schottky barrier double diodes
NOTES
BAT120
2001 Aug 27
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613510/03/pp8
Date of release: 2001
Aug 27
Document order number:
9397 750 08658

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