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| 2SJ408 L , 2SJ408 S Silicon P-Channel MOS FET Application HDPAK High speed power switching 4 4 Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for Switching regulator, DC - DC converter * Avalanche Ratings 1 12 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2, 4 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings -60 20 -50 -200 -50 -50 214 100 150 -55 to +150 Unit V V A A A A mJ W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C *** Value at Tch = 25 C, Rg 50 2SJ408 L , 2SJ408 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -60 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 ID = -1 mA, VDS = -10 V --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- 20 -- -- V --------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.015 10 -250 -2.25 0.02 A A V --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- ID = -25 A VGS = -10 V * ID = -25 A VGS = -4 V * ID = -25 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -25 A VGS = -10 V RL = 1.2 ------------------------------------------------- -- 0.02 0.028 --------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 30 50 -- S --------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 8200 3650 750 55 340 1150 620 -1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -50 A, VGS = 0 IF = -50 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- --------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- --------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------- -- 250 -- ns --------------------------------------------------------------------------------------- 2SJ408 L , 2SJ408 S Power vs. Temperature Derating 200 Pch (W) -1000 I D (A) -300 -100 -30 -10 -3 Maximum Safe Operation Area 150 10 PW DC Op 10 0 s Channel Dissipation Drain Current = 100 10 1m m s s s 50 er (1 Operation in at sh ion this area is ot (T ) c= limited by R DS(on) 25 C ) 0 50 100 150 Tc (C) 200 Case Temperature -1 Ta = 25 C -0.5 -1 -2 -5 -10 -20 -50 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -100 10 V 6V 4V Pulse Test 3.5 V (A) -50 Typical Transfer Characteristics V DS = -10 V Pulse Test I D (A) -80 -40 -60 3V ID Drain Current Drain Current -30 Tc = 75C 25C -25C -10 -40 -20 -20 VGS = 2.5 V -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 2SJ408 L , 2SJ408 S Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) -2.0 Static Drain to Source on State Resistance vs. Drain Current 100 50 VGS = -4 V -10 V -1.6 20 10 5 Drain to Source Voltage -1.2 I D = -50 A -0.8 -0.4 -20 A -10 A 2 1 -1 Pulse Test -3 -10 -30 -100 -300 -1000 Drain Current I D (A) 0 -4 -2 -6 Gate to Source Voltage -8 -10 V GS (V) Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 I D = -50 A V GS = -4 V 20 -10 A -20 A -50 A -10 A -20 A Forward Transfer Admittance vs. Drain Current 100 50 20 10 5 2 1 0.5 -0.1 -0.3 -1 -3 V DS = -10 V Pulse Test -10 -30 -100 Drain Current I D (A) Tc = -25 C 25 C 75 C 30 10 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) 2SJ408 L , 2SJ408 S Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 Typical Capacitance vs. Drain to Source Voltage 100000 Capacitance C (pF) 30000 10000 3000 1000 VGS = 0 f = 1 MHz 200 100 50 Ciss Coss Crss 300 100 20 10 -1 di / dt = 50 A / s V GS = 0, Ta = 25 C -50 -100 -2 -5 -10 -20 Reverse Drain Current I DR (A) 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V DD = -10 V -25 V -50 V V GS (V) 0 0 5000 2000 Switching Characteristics V GS = -10 V, V DD = -30 V PW = 5 s, duty < 1 % Switching Time t (ns) -20 -4 t d(off) 1000 500 tr 200 100 t d(on) 50 -1 -2 -5 -10 -20 -50 -100 Drain Current I D (A) tf Drain to Source Voltage -40 V DS V DD = -50 V -25 V -10 V V GS -8 -60 -12 -80 -100 0 -16 I D = -50 A -20 200 400 600 800 1000 Gate Charge Qg (nc) Gate to Source Voltage 2SJ408 L , 2SJ408 S Reverse Drain Current vs. Source to Drain Voltage Pulse Test Reverse Drain Current I DR (A) -80 -10 V -5 V V GS = 0 Repetive Avalanche Energy E AR (mJ) -100 250 Maximun Avalanche Energy vs. Channel Temperature Derating I AP = -50 A V DD = -25 V duty < 0.1 % Rg > 50 200 -60 150 -40 100 -20 50 0 25 0 -0.4 -0.8 -1.2 -1.6 -2.0 50 75 100 125 150 Source to Drain Voltage V SD (V) Channel Temperature Tch (C) Avalanche Test Circuit and Waveform EAR = 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin -15 V D. U. T 50 0 VDD 2SJ408 L , 2SJ408 S Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.05 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C PDM PW T 0.02 1 0.0 lse u tp ho 1s D= 0.03 PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 |
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