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| S DU/D9916 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) TYP ID 20A R DS (ON) S uper high dense cell design for low R DS (ON). 25 @ V G S = 4.5V 35 @ V G S = 2.7V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol VDS VGS @ TJ=125 C ID IDM IS PD TJ, TS TG Limit 20 12 20 60 20 50 0.4 -55 to 150 Unit V V A A A W W/ C C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S DU/D9916 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 20V, VGS = 0V VGS = 8V, VDS =0V VDS = VGS, ID = 250uA VGS =4.5V, ID = 6.0A VGS =2.5V, ID = 5.2A VDS = 5V, VGS = 4.5V VDS = 10V, ID = 6.0A Min Typ C Max Unit 20 1 V uA 100 nA 0.9 1.0 25 35 20 7 24 650 270 80 1.5 30 40 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS =10V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGEN = 4.5V, R L = 10 ohm R GE N = 6 ohm VDS =10V, ID = 6A, VGS =4.5V 2 6.5 11.5 12 12 10 2.8 2.6 14 23 25 20 15 ns ns ns ns nC nC nC S DU/D9916 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.72 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t O10sec. b.Pulse Test:Pulse Width O 300us, Duty CycleO 2%. c.Guaranteed by design, not subject to production testing. 25 V G S =10,9,8,7,6,5,4V 20 20 25 ID, Drain C urrent(A) ID, Drain C urrent (A) 15 15 10 V G S =3V 5 0 10 T j=125 C 5 -55 C 0 0.0 25 C 0 0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON), On-R es is tance(Ohms ) (Normalized) 1800 1500 1.8 1.6 1.4 1.2 1.0 0.8 F igure 2. Trans fer C haracteris tics V G S =4.5V ID=6A C , C apacitance (pF ) 1200 900 600 300 0 0 5 10 15 20 C is s C os s C rs s 0.6 -50 0 50 100 150 V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S DU/D9916 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 36 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 24 18 12 6 0 0 3 6 9 12 15 V DS =10V Is , S ource-drain current (A) 30 10 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 5 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 300 200 100 N) i L im t 10 DC V G S , G ate to S ource V oltage (V ) 4 3 2 1 0 0 VDS =10V ID=10A 1m 10 0m ms s 10 RD S (O 1s s 1 0.5 0.1 V G S =4.5V S ingle P ulse T c=25 C 2 4 6 8 10 12 14 16 1 10 30 60 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S DU/D9916 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ C (t)=r (t) * R cJ C R cJ C =S ee Datas heet T J M-T c = P DM* R cJ C (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 |
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