View RMPA2550_196670.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RMPA2550
August 2004
RMPA2550
2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
General Description
The RMPA2550 is a dual frequency band power amplifier designed for high performance WLAN applications in the 2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The single low profile 20 pin 3 x 4 x 0.9 mm package with internal matching on both input and output to 50 minimizes next level PCB space and allows for simplified integration. The two on-chip detectors provide power sensing capability while the logic control provides power saving shutdown options. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. * 27 dB modulated gain 5.15 to 5.85 GHz band * 26 dBm output power @ 1 dB compression both frequency bands * 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz * 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz * 3.3 V single positive supply operation * Adjustable bias current operation * Two power saving shutdown options (bias and logic control) * Separate integrated power detectors with 20 dB dynamic range * Low profile 20 pin, 3 x 4 x 0.9 mm standard Device QFN leadless package * Internally matched to 50 ohms * Optimized for use in 802.11a/b/g applications
Features
* Dual band operation in a single package design * 26 dB modulated gain 2.4 to 2.5 GHz band
Electrical Characteristics1,3 802.11g/a OFDM
Modulation (with 176 s burst time, 100s idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter Frequency Supply Voltage Gain Total Current @ 18dBm POUT Total Current @ 19dBm POUT EVM @ 18dBm POUT2 EVM @ 19dBm POUT2 Detector Output @ 19dBm POUT Detector Threshold4 POUT Spectral Mask Compliance5,7 Minimum 2.4 3.0 24.5 Typical 3.3 26 150 157 2.0 3.0 508 5.0 21.0 Maximum 2.5 3.6 28 182 189 2.5 3.5 600 7.0 Minimum 5.15 3.0 25.5 Typical 3.3 27 228 235 2.5 3.5 780 5.0 21.0 Maximum 5.85 3.6 29 260 267 3.5 4.5 865 7.0 Unit GHz V dB mA mA % % mV dBm dBm
Electrical Characteristics3,6 802.11b CCK
Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth
Parameter Frequency Supply Voltage Gain Total Current First Sidelobe Power Second Sidelobe Power Max POUT Spectral Mask Compliance7 Minimum 2.4 3.0 24.5 Typical 3.3 26 250 Maximum 2.5 3.6 28 -40 -55 24.0 Unit GHz V dB mA dBc dBc dBm
Notes: 1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25C, PA is constantly biased, 50 system. VL adjusted for either 2.4 or 5 GHz operation. 2: Percentage includes system noise floor of EVM=0.8%. 3: Not measured 100% in production. 4: POUT measured at PIN corresponding to power detection threshold. 5: Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25C, POUT =+23 dBm, 50 system. Satisfies spectral mask. 7: PIN is adjusted to point where performance approaches spectral mask requirements.
(c)2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D
RMPA2550
Electrical Characteristics1 Single Tone
Parameter Frequency Supply Voltage Gain2 Total Quiescent Current2 Bias Current at pin VM3 P1dB Compression2 Current @ P1dB Comp2 Standby Current4 Shutdown Current (VM=0V) Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold9 2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic Shutdown Control Pin: Device Off Device On Logic Current Turn-on Time5 Turn-off Time Spurious (Stability)6 Minimum 2.4 3.0 24 70 25 Typical 3.3 26 120 13.5 26 350 0.5 <1.0 15 12 2.0 7.0 -45 -42 VL 2.4 2.4 0.0 10 <1 <1 -65 Maximum 2.5 3.6 29 150 18.0 475 Minimum 5.15 3.0 24 150 24 Typical 3.3 27.5 180 15.5 26 400 2 100 14 16 3.0 7.0 -30 -35 VL 5.0 0.0 2.4 100 <1 <1 -65 Maximum 5.85 3.6 31 225 Unit GHz V dB mA mA dBm mA mA A dB dB V dBm dBc dBc
475
9.0
9.0
2.0
0.8
0.8
2.0
V V A S S dBc
Notes: 1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25C, PA is constantly biased, 50 system. VL adjusted for either 2.4 or 5 GHz operation. 2: 100% production screened. 3: Bias current is included in the Total Quiescent Current. 4: VL is set to Logic Level for Device Off operation. 5: Measured from Device On signal turn on, to the point where RF POUT stabilizes to 0.5dB. 6: Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 7: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. 8: Not measured in production. 9: POUT measured at PIN corresponding to power detection threshold.
Absolute Ratings1
Symbol VC IC2.4, IC5.0 Parameter Positive Supply Voltage Supply Current IC2.4 IC5.0 Positive Bias Voltage Logic Voltage RF Input Power Case Operating Temperature Storage Temperature Value 5 820 700 4.0 5 10 -40 to +85 -55 to +150 Units V mA mA V V dBm C C
VM VL PIN TCASE TSTG
Note: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Functional Block Diagram
BIAS
DETECTOR
INPUT MATCH
5.0 GHz PA
OUTPUT MATCH
BIAS
INPUT MATCH
2.4 GHz PA
OUTPUT MATCH
DETECTOR
BIAS
Backside Ground
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Description VM 2.4 DT2 2.4 DT1 2.4 (Vdet) VC2 2.4 N/C RF OUT 2.4 N/C N/C RF OUT 5.0 DT1 5.0 (Vdet) VC3 5.0 VC2 5.0 VM2 5.0 VL 5.0 VM13 5.0 VC1 5.0 RF IN 5.0 VC1 2.4 RF IN 2.4 VL 2.4
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Performance Data
802.11g/a Frequency Dependency
RMPA2550 Total Measured EVM Vs. Modulated Pout 2.40 to 2.50 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
10 10
RMPA2550 Total Measured EVM Vs. Modulated Pout 5.15 to 5.85 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
8 Total Measured EVM (%) Total Measured EVM (%)
8
6
2.40 GHz 2.45 GHz 2.50 GHz
6
5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz
4
4
Includes 0.8% System Level EVM
Includes 0.8% System Level EVM
2
2
0 0 5 10 15 20 25 Modulated Power Out (dBm)
0 0 5 10 15 20 25 Modulated Power Out (dBm)
RMPA2550 Detector Voltage Vs. Modulated Pout 2.40 to 2.50 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
1000
2000
RMPA2550 Detector Voltage Vs. Modulated Pout 5.15 to 5.85 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
800 Detector Voltage (mV) Detector Voltage (mV)
1600 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz
600 2.40 GHz 2.45 GHz 2.50 GHz 400
1200
800
200
400
0 0 5 10 15 Modulated Power Out (dBm) 20 25
0 0 5 10 15 Modulated Power Out (dBm) 20 25
RMPA2550 Total Current Vs. Modulated Pout 2.40 to 2.50 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
300 300
RMPA2550 Total Current Vs. Modulated Pout 5.15 to 5.85 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
250 Total Current (mA) 2.40 GHz 2.45 GHz 2.50 GHz 200 Total Current (mA)
250
200 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz
150
150
100 0 5 10 15 Modulated Power Out (dBm) 20 25
100 0 5 10 15 Modulated Power Out (dBm) 20 25
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Performance Data (Continued)
802.11g/a Frequency Dependency (continued)
RMPA2550 Gain Vs. Modulated Pout 2.40 to 2.50 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
30 30
RMPA2550 Gain Vs. Modulated Pout 5.15 to 5.85 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
28
28
Gain (dB)
Gain (dB)
26
26
24 2.40 GHz 2.45 GHz 2.50 GHz 22
24
22
5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz
20 0 5 10 15 20 25 Modulated Power Out (dBm)
20 0 5 10 15 20 25 Modulated Power Out (dBm)
802.11g/a Temperature Dependency
RMPA2550 Total Measured EVM Vs. Modulated Pout 2.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz RMPA2550 Total Measured EVM Vs. Modulated Pout 5.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz
10
10
8 Total Measured EVM (%) Total Measured EVM (%)
8
6
T=-40C T=+25C T=+85C
6
T=-40C T=+25C T=+85C
4
4
Includes 0.8% System Level EVM
Includes 0.8% System Level EVM
2
2
0 0 5 10 15 20 25
0 0 5 10 15 20 25
Modulated Power Out (dBm)
Modulated Power Out (dBm)
1000
RMPA2550 Detector Voltage Vs. Modulated Pout 2.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz
RMPA2550 Detector Voltage Vs. Modulated Pout 5.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz
2000
800 Detector Voltage (mV) Detector Voltage (mV)
1600
600 T=-40C T=+25C T=+85C
1200
T=-40C T=+25C T=+85C
400
800
200
400
0 0 5 10 15 20 25
0 0 5 10 15 20 25
Modulated Power Out (dBm)
Modulated Power Out (dBm)
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Performance Data (Continued)
802.11g/a Temperature Dependency (continued)
RMPA2550 Total Current Vs. Modulated Pout 2.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz
300 300
RMPA2550 Total Current Vs. Modulated Pout 5.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz
250 Total Current (mA) Total Current (mA) T=-40C T=+25C T=+85C 200
250
T=-40C T=+25C T=+85C
200
150
150
100 0 5 10 15 20 25 Modulated Power Out (dBm)
100 0 5 10 15 20 25 Modulated Power Out (dBm)
30
RMPA2550 Gain Vs. Modulated Pout 2.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz
RMPA2550 Gain Vs. Modulated Pout 5.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz
30
29
T=-40C T=+25C T=+85C
29
28 Gain (dB)
28
26
Gain (dB)
27
27
26
25
25 T=-40C T=+25C T=+85C
24
24
23 0 5 10 15 Modulated Power Out (dBm) 20 25
23 0 5 10 15 Modulated Power Out (dBm) 20 25
802.11g/a VM Dependency
RMPA2550 Total Measured EVM Vs. Modulated Pout 2.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
10 10
RMPA2550 Total Measured EVM Vs. Modulated Pout 5.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
8 Total Measurment EVM (%)
6
Total Measurment EVM (%)
VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V
8
6
VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V
4
Includes 0.8% System Level EVM
4 Includes 0.8% System Level EVM 2
2
0 0 5 10 15 20 25
0 0 5 10 15 20 25
Modulated Power Out (dBm)
Modulated Power Out (dBm)
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Performance Data (Continued)
802.11g/a VM Dependency (continued)
RMPA2550 Modulated Pout for 3% Total System EVM for VM=2.7 to 3.3V, VC=3.3V, T=25C Data Rate 54Mbps OFDM 16.7MHz
20 20
RMPA2550 Modulated Pout for 3% Total System EVM for VM=2.7 to 3.3V, VC=3.3V, T=25C Data Rate 54Mbps OFDM 16.7MHz
18 Modulated Power Out (dBm) Modulated Power Out (dBm)
18
16
16
14 VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V
14 VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V
12
12
10
10
8 2.38
8 2.4 2.42 2.44 2.46 2.48 2.5 2.52 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Frequency (GHz) Frequency (GHz)
RMPA2550 Total Current Vs. Modulated Pout 2.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
300 VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V 300
RMPA2550 Total Current Vs. Modulated Pout 5.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
250
250
Total Current (mA)
200
Total Current (mA)
200
150
150
100
100
50
50
VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V
0 0 5 10 15 Modulated Power Out (dBm) 20 25
0 0 5 10 15 Modulated Power Out (dBm) 20 25
RMPA2550 Total Quiescent Bias Current Vs. VM Voltage 2.45 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
250
RMPA2550 Total Quiescent Bias Current Vs. VM Voltage 5.45 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz
250
Total Quiescent Supply Current (mA)
200
Total Quiescent Supply Current (mA) 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4
200
150
150
100
100
50
50
0
VM Voltage Supply (V)
0 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4
VM Voltage Supply (V)
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Performance Data (Continued)
Single Tone
RMPA2550 Single Tone Gain Vs. Power Out 2.40 to 2.50 GHz VM, VC=3.3V T=25C
29 29
RMPA2550 Single Tone Gain Vs. Power Out 5.15 to 5.85 GHz VM, VC=3.3V T=25C
28
28
27 Gain (dB) Gain (dB)
27
26
26 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz 0 5 10 15 20 25 30
25
2.40 GHz 2.45 GHz 2.50 GHz
25
24
24
23 0 5 10 15 20 25 30 Single Tone Power Out (dBm)
23 Single Tone Power Out (dBm)
RMPA2550 Single Tone Gain Vs. Power Out 2.45 GHz VM, VC=3.3V T=-40, +25, +85C
30 30
RMPA2550 Single Tone Gain Vs. Power Out 5.45 GHz VM, VC=3.3V T=-40, +25, +85C
29
T=-40C T=+25C T=+85C
29
28 Gain (dB)
28
Gain (dB)
27
27
26
26 T=-40C T=+25C T=+85C
25
25
24
24
23 0 5 10 15 20 25 30
23 0 5 10 15 20 25 30
Single Tone Power Out (dBm)
Single Tone Power Out (dBm)
RMPA2550 S-Parameters 2.4 GHz Band T=25C VM, VC=3.3V
40 40
RMPA2550 S-Parameters 5.0 GHz Band T=25C VM, VC=3.3V
20
20
S-Parameters (dB)
0
S-Parameters (dB) S11 Mag S21 Mag S22 Mag
0
-20
-20
-40
-40
S11 Mag S21 Mag S22 Mag 5 5.2 5.4 5.6 5.8 6
-60 2 2.2 2.4 2.6 2.8 3 Frequency (GHz)
-60 Frequency (GHz)
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Performance Data (Continued)
802.11g/a/b Spectral Mask
RMPA2550 802.11g Spectral Mask 2.45 GHz T=25C VM, VC = 3.3V
0 0
RMPA2550 802.11a Spectral Mask 5.25 GHz T=25C VM, VC = 3.3V
Power Spectral Density (dBr)
Power Spectral Density (dBr)
-10 -20 -30 -40 -50 -60 -70 2400
+10dBm Pout(dBr) +16dBm Pout(dBr) +20dBm Pout(dBr) Mask (dBr)
-10 -20 -30 -40 -50 -60 -70 5200
+10dBm Pout(dBr) +16dBm Pout(dBr) +20dBm Pout(dBr) Mask (dBr)
2420
2440
2460
2480
2500
5220
5240
5260
5280
5300
Frequency (MHz)
Frequency (MHz)
RMPA2550 802.11b Spectral Mask 2.45 GHz T=25C VM,VC =3.3V
0
+14dBm Pou t(dBr) +17dBm Pou t(dBr) +21dBm Pou t(dBr) +24dBm Pou t(dBr) Mask (dBr)
Power Spectral Density (dBr)
-10
-20
-30
-40
-50
-60
-70 2400
2420
2440
2460
2480
2500
Frequency (MHz)
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Package Outline
Dimensions in inches [mm]
Detail B
Front Side View
Bottom View as Viewed from Bottom
Detail A
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Evaluation Board Schematic
Evaluation Board Bill of Materials
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
RMPA2550
Evaluation Board Layout
Actual Board Size = 2.0" X 1.5"
= component = Jumper/short connection
Actual Board Size = 2.0" X 1.5"
Evaluation Board Turn-On Sequence1
1) Connect RF ports to RF test equipment. 2) Connect common ground terminal to the Ground (GND) pin on the board. 3) Connect terminals VC1 5.0, VC2 5.0, VC3 5.0, VC1 2.4, VC2 2.4 together and apply to positive supply (VC=3.3V). 4) Connect terminals VM 2.4, VM2 5.0 and VM13 5.0 together and connect to positive supply (VM=3.3V). 5) Connect voltmeter to Detector Output, pin DT1 5.0 and to DT1 2.4. 6) Connect logic control pins VL 5.0 and VL 2.4 together and apply 0V. Now only the 2.4GHz PA is on. Observe the following positive currents flowing into the pins: Pin VL 2.4 VC (total) 2.4 VM 2.4 Current <1 nA 80 - 110 mA 12 - 15 mA Pin VL 5.0 VC (total) 5.0 VM (total) 5.0 Current <1 nA <1 nA <1.9 mA
7) Apply positive voltage of +3.0V to logic control pins VL 5.0 and VL 2.4. Now only the 5GHz PA is on. Observe the following positive currents flowing into the pins: Pin VL 5.0 VC (total) 5.0 VM 5.0 Current ~150 A ~184 mA ~16 mA Pin VL 2.4 VC (total) 2.4 VM 2.4 Current <0.25mA <1 nA <0.7mA
8) Apply input RF power to SMA connector pin RF IN 2.4 or RF IN 5.0. Currents on collector pins will vary depending on the input drive level.
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence on the previous page.
Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.
(c)2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D
RMPA2550
Application Information
Precautions to Avoid Permanent Device Damage:
Static Sensitivity: Follow ESD precautions to protect against ESD damage: * A properly grounded static-dissipative surface on which to place devices. * Static-dissipative floor or mat. * A properly grounded conductive wrist strap for each person to wear while handling devices.
(c)2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

▲Up To Search▲

Price & Availability of RMPA2550

	To Download RMPA2550 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .