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Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES * Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Isolated mounting tab PBYR745F, PBYR745X series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V k 1 a 2 IF(AV) = 7.5 A VF 0.57 V GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR745F series is supplied in the SOD100 package. The PBYR745X series is supplied in the SOD113 package. PINNING PIN 1 2 tab DESCRIPTION cathode anode isolated SOD100 case SOD113 case 1 2 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR7 PBYR7 VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature Ths 103 C square wave; = 0.5; Ths 123 C square wave; = 0.5; Ths 123 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 40F 40X 40 40 40 7.5 15 100 110 1 150 175 MAX. 45F 45X 45 45 45 UNIT V V V A A A A A C C IRRM Tj Tstg July 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from both terminals to external heatsink CONDITIONS PBYR745F, PBYR745X series MIN. - TYP. MAX. UNIT 1500 V SOD100 package; R.H. 65%; clean and dustfree Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; both terminals to external sinusoidal waveform; R.H. 65%; clean heatsink and dustfree Capacitance from pin 1 to external heatsink f = 1 MHz - - 2500 V Cisol - 10 - pF THERMAL RESISTANCES SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound in free air MIN. TYP. MAX. UNIT 55 5.5 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 7.5 A; Tj = 125C IF = 15 A; Tj = 125C IF = 15 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C MIN. TYP. MAX. UNIT 0.45 0.65 0.64 0.13 17 270 0.57 0.72 0.84 1 22 V V V mA mA pF July 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR745F, PBYR745X series 8 7 6 5 Forward dissipation, PF (W) Vo = 0.42 V Rs = 0.02 Ohms PBYR745X Ths(max) / C D = 1.0 106 111.5 100 Reverse current, IR (mA) PBYR745 125 C 0.5 0.2 0.1 I tp D= tp T t 117 122.5 128 133.5 139 144.5 150 12 10 100 C 1 75 C 50 C 0.1 4 3 2 1 0 0 2 T 0.01 0 Tj = 25 C 25 Reverse voltage, VR (V) 50 4 6 8 10 Average forward current, IF(AV) (A) Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D. Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj 8 7 6 5 4 3 2 1 0 Forward dissipation, PF (W) Vo = 0.42 V Rs = 0.02 Ohms PBYR745X Ths(max) / C 106 111.5 a = 1.57 117 122.5 128 133.5 139 144.5 Cd / pF 1000 PBYR745 2.8 4 2.2 1.9 100 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 150 8 10 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C. 50 Forward current, IF (A) Tj = 25 C Tj = 125 C PBYR745 10 Transient thermal impedance, Zth j-hs (K/W) 40 1 30 typ 20 max 10 T 0.1 P D tp D= tp T t 0 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 0.01 1us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR745X Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance; Zth j-hs = f(tp). July 1998 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g PBYR745F, PBYR745X series 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min k 0.4 M a 0.9 0.7 0.55 max 1.3 5.08 top view Fig.7. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g 3.2 3.0 10.3 max PBYR745F, PBYR745X series 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 1.0 (2x) 0.6 2.54 5.08 0.5 2.5 0.9 0.7 Fig.8. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYR745F, PBYR745X series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 6 Rev 1.200 |
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