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  Datasheet File OCR Text:
 RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MD1S THRU MD7S
SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere
FEATURES
* * * * * * * Surge overload rating - 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 0.5 gram
MD-S
MECHANICAL DATA
MD
0.028(0.9) 0.020(0.5) 0.108(2.74) 0.092(2.34) 0.193(4.9) 0.177(4.5)
* Epoxy : Device has UL flammability classification 94V-0 * UL listed the recognized component directory, file #E94233
1 2 3 4
.004(0.10) MAX.
2.756(7.0)
0.260(6.6)
0.157(4.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
0.193(4.9) 0.177(4.5)
o
0.106(2.7) 0.091(2.3)
0.014(0.35) 0.006(0.15)
Dimensions in millimeters
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Output Rectified Current at TA = 30 oC - on glass-epoxy P.C.B. ( NOTE 1 ) - on aluminum substrate ( NOTE 2 ) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range IFSM TJ,TSTG 30 -55 to + 150 Amps
0
SYMBOL VRRM VRMS VDC IO
MD1S 50 35 50
MD2S 100 70 100
MD3S 200 140 200
MD4S 400 280 400 0.5 0.8
MD5S 600 420 600
MD6S 800 560 800
0.157(4.0) 0.145(3.6)
MD7S 1000 700 1000
UNITS Volts Volts Volts Amp
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per Bridge Element at 0.5A DC Maximum Reverse Current at rated DC Blocking Voltage per element @TA = 25 C @TA = 125 oC
o
SYMBOL VF
MD1S
MD2S
MD3S
MD4S 1.05 10 0.5
MD5S
MD6S
MD7S
UNITS Volts uAmps mAmps 2001-4
IR
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05" (1.3 X 1.3mm) pads. 2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25" (20 X 20 X 6.4mm) mounted on 0.05 X 0.05" (1.27 X 1.27mm) solder pad. 3. Suffix "-S" Surface Mount for Mini Dip Bridge.
0.152(3.6)
C
RATING AND CHARACTERISTIC CURVES ( MD1S THRU MD7S )
TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
POWER DISSIPATION 2.4
2
pulse test per one diode
sine wave
Tj=150 C
0
POWER DISSIPATION PF(W)
1
2 1.6
0.5
TL=150 C
(TYP)
0
TL=25 C
(TYP)
0
1.2 0.8
0.2
0.1
0.4
0.05
0 0 0.2 0.4 0.6 0.8 1 1.2
0
0.2
0.4
0.6
0.8
1
INSTANTANEOUS FORWARD VOLTAGE, (V)
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
SURGE FORWARD CURRENT CAPABILITY
35
TYPICAL FORWARD CURRENT DERATING CURVE 1.4
PEAK FORWARD SURGE CURRENT, (A)
sine wave
AVERAGE FORWARD CURRENT, (A)
30 25 20 15 10 5 0 1 2 5 10
1.2 1.0 0.8
on aluminum substrate
0
sine wave R-load free in air
IFSM
8.3ms 8.3ms 1 cycle non-repetitive 0 Tj=25 C
0.6 0.4 0.2 0
on glass -epoxy substrate
20
50
100
0
40
80
120
o
160
NUMBER OF CYCLE
AMBIENT TEMPERATURE, ( C )
RECTRON


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